AlxGa1-xAs选择性湿法氧化技术的研究

详细研究了温度和Al组分与AlxGa1-xAs横向氧化速率的关系,通过分析氧化机制和实验得到的氧化宽度与时间的线性关系,指出在较短时间内的氧化为受AlxGa1-xAs材料与水汽反应速率限制的过程。运用优化的氧化条件,成功制备了氧化孔径为8μm的垂直腔面发射激光器,最大直流光输出功率为3.2mW,激射波长为978nm,工作电流为15mA。     

Epoxidation of olefines with PDMS membranes containing zeolite occluded manganese diimine complexes

A new composite catalyst for selective epoxidation of olefins with tert-butyl hydroperoxide (tBHP) is reported. The catalyst contains manganese diimine complexes (cis-Mn bis-2,2′-Bipyridyl), occluded within a NaY zeolite, in turn incorporated in a polydimethylsiloxane membrane (cis-[Mn(bpy)₂]²⁺-NaY-PDMS). The three-step synthesis consists of a Mn²⁺exchange of NaY, ligand sorption to form cis-[Mn(bpy)₂]²⁺-NaY and incorporation of the latter in a PDMS membrane. The major differences between [Mn(bpy)₂]²⁺-NaY as such and occluded in PDMS are observed in the sorption and catalytic characteristics. With the membrane system, the use of a solvent becomes obsolete. Whereas optimal cyclohexene oxidation with [Mn(bpy)₂]²⁺-NaY occurs with hydrogen peroxide in acetone, tBuOOH proves to be a better oxidant for [Mn(bpy)₂]²⁺-NaY-PDMS. The reactions in batch and fed-batch reactors are discussed. A simple regeneration procedure, monitored by FT-IR spectroscopy is proposed.     

糠醛装置腐蚀机理分析及防护

重质糠醛精制装置设备腐蚀严重与糠醛氧化变质有关,通过分析装置设备腐蚀机理和糠醛氧化、变质的原因,提出了用N_2汽提回收和原料脱水等改进措施。     

Oxidation behavior of silicide coating on Ti3SiC2-based ceramic

A silicide coating was prepared on Ti₃SiC₂-based ceramic by pack cementation to improve the oxidation resistance of Ti₃SiC₂, which is a technologically important material for high temperature applications. The microstructure, phase composition and oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly composed of TiSi₂ and SiC. A single layer of a mixture of SiO₂ and TiO₂ was formed on the surface of the coated sample during isothermal oxidation at 1100 °C and 1200 °C for 20h. Compared to Ti₃SiC₂, the parabolic rate constant of silicide coated Ti₃SiC₂ decreased by 2~3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than Ti₃SiC₂ during the cyclic oxidation at 1100 °C for 400 times. However, during the preparation of the coating, a number of fine cracks formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the oxidation rate was accelerated, which degraded the oxidation resistance. Electronic Publication     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

HCl氧化物MOS结构质子辐照诱导的界面陷阱效应

用微分电容法研究质子辐照HCl氧化物铝栅MOS结构诱导的界面陷阱,栅氧化层在1 160℃很干燥的、含0～10％HCl的气氛中热生长而成,质子辐照能量为120～300keV,注入总剂量范围为8×10~(13)～1×10~(16)p/cm~2。结果表明,辐照诱导的界面陷阱能级密度随质子能量、剂量增加而增加。然而,氧化层中掺入6％HCl时,辐照诱导的界面陷阱明显减少。这样,已能有效地改变MOS器件的抗辐照性能。实验结果可用H~+二级过程解释。     

过一硫酸的合成及其在铀水冶中的应用

文章介绍了选择过一硫酸合成的最佳条件及进行生产的可行性。介绍了过一硫酸用于含铀煌斑岩、辉绿岩、花岗岩及炭板岩矿石提取铀时,与常规酸浸方法对比,有很好的经济效益和对环境的保护价值。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Electrical characterization of waterside corrosion films formed on ZrNb(1%)O(0.13%)

Oxide films formed by water oxidation at 360°C on ZrNb(1%)O(0.13%) for several durations (50-300 days) were studied by impedance spectroscopy (IS) in gaseous atmosphere. The electrical behavior of oxide layers was investigated as a function of the temperature (25-300°C) at constant oxygen partial pressure (0.3 Pa). Cole-Cole diagrams suggest a frequency-temperature equivalence. A simple electrical model has been derived from the as-deduced 14 decade master curve. Equivalent circuit includes a series association of two layers exhibiting different dielectric properties: a dense layer near the oxide-metal interface and a porous layer at the waterside. Electronic conductivity is predominant within the whole temperature range, but ionic contribution was proposed to increase for temperature higher than 170°C. During the parabolic oxidation step, the oxide thickness of the barrier layer increases but oxide growth would not be only a geometrical one. The kinetic modification to a constant oxidation rate was observed to be correlated to the increase of the dense layer thickness. Such a behavior suggests that the mechanism controlling oxidation rate is not a pure mechanism of oxygen diffusion through this layer. Finally, a qualitative model of activated electrons transport based on an hopping mechanism was proposed in order to take into account that the Arrhenius diagrams of both total conductivity and dispersion factor are characterized by a break point with two activation energy values.     

Microstructural investigation of the breakdown of the protective oxide scale on a 304 steel in the presence of oxygen and water vapour at 600 °C

This article focuses on the detailed microstructural investigation of the oxide scale formed on a 304 steel in the presence of oxygen and water vapour (40%) at 600 °C. The work has been carried out using a combination of microanalytical techniques including FIB, TEM, EDX and electron diffraction. The local breakdown of the initially protective oxide scale and the growth of island/crater oxide morphology are described. Special consideration is given to the influence of the microstructure of the steel and the oxide scale on the breakdown behaviour.