温度梯度溶液生长法制备x=0.2的Cd1-xZnxTe晶体及性能研究

利用温度梯度溶液生长法(TGSG)在较低生长温度下制备了掺Al和掺In的x=0.2的Cd1-xZnxTe晶体,晶体起始生长温度约为1223K,温度梯度为20～30K/cm,坩埚的下降速度为1mm/h。采用红外显微镜、傅里叶红外光谱仪、扫描电镜能谱仪(SEM/EDS)和I-V测试分别研究了晶体中的Te夹杂相、红外透过率、Zn组分分布和电阻率。结果显示CdZnTe晶锭初始生长区、稳定生长区的Te夹杂相密度分别为8.3×103、9.2×103/cm-2,比垂直布里奇曼法生长的晶体低约1个数量级,红外透过率分别为61%、60%。Al掺杂CdZnTe晶体的电阻率为1.05×106Ω.cm,而In掺杂CdZnTe晶体的电阻率为7.85×109Ω.cm。晶锭初始生长区和稳定生长区的Zn组分径向分布均匀。     

绿色设计--产品设计的必然发展趋势

随着环境问题的日益突出，绿色设计越来越引起了人们的重视，已成为一种全新的设计方法。对绿色设计和传统设计进行了对比分析，阐述了绿色设计研究的主要内容，并提出了一些合理化的建议。     

Influence of intermittently etching on quality of CVD diamond thin films

A new method, called growing-etching repetitional process based on hot filament chemical vapor deposition, was proposed to improve the quality of diamond film. During the deposition carbon source was intermittently closed letting hydrogen etch the surface of the diamond film fi＇om time to time. In order to find whether it is helpful to the films＇ quality, a series of experiments were done. The results show that the new method can enhance the orientation of the chemical vapor deposition diamond films, reduce the graphite phase and increase the film＇s surface resistivity.     

Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment

The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction （XRD） patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04 - 10^8 Ω.cm. As a result, room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film.     

恶二唑为侧链的PPV类小分子光电性质研究

合成了恶二唑为侧链的系列PPV衍生物小分子(En),主要通过升降温差热分析(DSC)曲线、偏光显微镜、紫外吸收光谱、电化学行为曲线以及多层器件等,研究了小分子的电学和光学性质,发现其具有液晶性、电子和空穴传输性、发光性等优良性能,是一种非常具有吸引力的有机电致发光小分子。引进R-OXD(En)层后在低于3V时就能得到可见光发射,在7V时其光亮度为1000cd·m-2。     

微条气体室探测器

本文从多丝正比室（MWPC）特点出发,详细介绍了MSGC的工作原理、结构设计原理、结构参数（包括衬底材料、微条材料、工作气体）的选择依据以及应用前景,并报道了MSGC的最新研究进展。     

类金刚石薄膜对多孔硅发光的钝化作用

介绍了类金刚石薄膜对多孔硅发光的钝化作用.类金刚石薄膜隔绝了外界对多孔硅表面的影响,使硅氢键不易断裂,从而减少了非辐射复合中心,稳定了多孔硅的发光性能.通过在类金刚石薄膜中掺氮还可以进一步提高钝化效果,因为氮使多孔硅表面更多的悬空键被钝化形成Si-N键,从而提高了发光强度.     

蓝色发光材料MGa2S4:Ce(M=Ca,Sr)发光特性的研究

制备了可用于蓝色ＴＦＥＬ的粉末发光材料ＭＧａ２Ｓ４：Ｇｅ（Ｍ＝Ｃａ，Ｓｒ）地其昌体结构进行了Ｘ射线分析，测量并其激光光谱和发射光谱，研究了Ｃｅ＾３＋浓度的变化对ＣａＧａ２Ｓ４：Ｃｅ和ＳｒＧａ２Ｓ４：Ｃｅ的激光光谱，发射光谱、色纯工及发光强度的影响，同时研究了基质组分的改变对发光特性的影响，结果表明，ＣａＧａ２Ｓ４：Ｃｅ和ＳｒＧａ２Ｓ４：Ｃｅ的可发射纯蓝色光，色纯度好，对ＣａＧａ２Ｓ４：Ｃｅ来说，实     

碲镉汞衬底上沉积类金刚石薄膜的界面分析

采用等离子增强化学气相法 (PECVD)在碲镉汞 (MCT)衬底上沉积纳米颗粒的类金刚石薄膜 (DLC) ,对DLC MCT界面进行了俄歇电子能谱 (AES)分析 ,并与离子溅射法 (IS)沉积的ZnS MCT界面比较 ,结果表明DLC和ZnS薄膜都能较好地抑制MCT中HgTe的分解 ,在一定程度上阻挡了MCT中Hg的外扩散 .相对于ZnS中的S而言 ,DLC的C在MCT中的内扩散深度较小 (前者为 4 0 0 ,而后者仅为 2 0 0 ) .红外透射光谱结果表明DLC膜比ZnS膜具有更好的抗反射效果     

Influence of nitrogen gas on structure and properties of DLC films prepared by XeCl pulsed laser deposition

Diamond-like carbon （DLC） films were prepared by PLD process using 308 nm（XeCl） laser beam with high power （500 W） and high fi＇equency（300 Hz）. The effects of nitrogen pressure on the structure and properties of the DLC films under such extremely high power and repetition rate were studied. The results indicate that the microstructures of the films are varied fi＇om amorphous carbon to graphitized carbon in long-order with the increase of N2 pressure, and the optical properties of the films are deteriorated as compared to that of DLC films without nitrogen.