Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Tungsten-doped zinc oxide（ZnO:W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^-4Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.     

二氧化钒金属-绝缘相变的回线宽度及其调控研究进展

优异的金属-绝缘相变性能使得二氧化钒(VO₂)具有广阔的应用前景。回线宽度是影响VO₂实际应用的一个重要指标，不同类型的器件对回线宽度的要求不同。传感类器件要求VO₂的回线宽度要尽量小，而存储类器件则要求VO₂具有较大的回线宽度。为了满足不同器件的应用要求，研究人员已通过磁控溅射法、溶胶-凝胶法、聚合物辅助沉积法和脉冲激光沉积法等方法制备了VO₂,并对其回线宽度进行了研究。本文先从形貌(颗粒大小、颗粒形状和晶界)、元素掺杂和择优取向三个方面对回线宽度的研究进行了总结；然后，对二氧化钒回线宽度的调控机理进行了讨论；最后，指出当前研究中的不足，并对将来的工作进行了展望。