氧化钪在冰晶石-氟化锂体系中的溶解性能

研究了Sc2O3在nNaF·AlF3-Al2O3熔盐体系中的溶解度随冰晶石的分子比[n（NaF）／n（AlF3）]、氧化铝和LiF添加量及温度的变化关系．结果表明,Al2O3和LiF的添加量是影响溶解度的主要因素,Al2O3添加量的降低、LiF添加量的增加及分子比的降低都有利于Sc2O3的溶解．随温度的升高,Sc2O3的溶解度增大,但温度影响显著性相对较小,并且温度升高造成电解质挥发严重,不利于电解的进行。当冰晶石分子比（CR）为2．2、添加Al2O3添加量为3％,LiF添加量为7％（质量分数）时,Sc2O3的溶解度可达3％-5％以上,可以满足电解条件．     

YS／T491—2005变形铝及铝合金用熔剂标准述评

对熔剂的标准起草过程及起草思路,起草过程中的一些想法和制定依据进行分析,重点介绍了标准的主要技术指标的来源,制定情况,对企业执行标准有指导作用。     

行人扶梯荷载作用下悬挑楼盖的振动测试与舒适度评价

针对搭接扶梯的悬挑楼盖在行人扶梯荷载作用下容易产生铅垂向振动,以某商业夹层中的悬挑楼盖为对象,通过现场振动测试,研究扶梯运行、行人数量、行走方向及行人运动状态对悬挑楼盖振动响应的影响,依据测试数据,评价悬挑楼盖振动的舒适度及人员感知度。研究结果表明：行人步频是影响悬挑楼盖振动的主要因素,而扶梯运行与否则是次要因素;多人在扶梯上以同一步频双向行走时,对悬挑楼盖产生的振动响应较单向行走时有明显削弱的现象;采用峰值加速度对悬挑楼盖进行舒适度评价,当行人在扶梯上跑动时,悬挑楼盖的振动响应易超出舒适度限值;采用KB（Konstant Beurteilungswerte）值对悬挑楼盖进行感知度评价,当行人相对扶梯静止时,悬挑楼盖的振动不会超出感知度容许值,当行人相对扶梯走动或跑动时,悬挑楼盖的振动则会超出感知度容许值。     

浅谈大峡谷一号隧道边墙裂缝成因分析及处理

大峡谷一号隧道某段由于天然溶洞与墙背回填裂隙贯通，暴雨造成裂隙与溶洞积水迅速上升。形成高位水柱，水柱对隧道边墙底部产生的压强接近(甚至超过了)墙体混凝土的抗拉强度，造成边墙下部开裂，不得不进行处理。分析了边墙裂缝产生的原因，以及处理时的设计原则、设计内容和施工关键环节。     

电容层析成像在滑动轴承润滑油膜测量中的应用

滑动轴承是燃气轮机、蒸汽轮机、压缩机等重型旋转机械中的关键部件,其安全稳定运行具有重大的经济意义。该文提出将电容层析成像技术用于滑动轴承润滑油膜分布的监测。根据滑动轴承的特点,设计特殊的传感器结构。将轴颈设为特殊的传感器电极,与轴瓦上的常规电极共同形成电极阵列,对轴颈和轴瓦间的环形空隙区域成像。对设计的传感器结构建立有限元模型,计算传感器电容、电极对灵敏场等,以分析传感器的特性。采用LBP和Landweber 2种算法重建滑动轴承润滑油膜分布图像,重建算法能较好地重建设定油膜分布下的图像。     

径向环形汽封流动特性研究

提出一种新型径向环形汽封,对其结构及密封原理进行分析。与传统梳齿汽封相比,在结构上增加4个90°转弯,将流体泄漏方向由轴向改为径向。增大密封内流体流动阻力,减小了气流激振力。建立普通梳齿汽封和径向环形汽封三维数值计算模型。计算结果表明,同一密封间隙下径向环形汽封泄漏系数比普通轴向梳齿汽封低20%左右。转速对2种汽封径向气流力影响较小,而对切向气流力影响较大。随转速升高,切向气流力不断增大,系统稳定性降低。同一偏心情况下,径向环形汽封径向气流力约比轴向梳齿汽封大1～3倍,切向气流力约比轴向梳齿汽封小70%～75%,且这一比例随转速升高越来越大。     

金属锂负极改性研究现状

综述了金属锂二次电池中金属锂负极改性的研究进展。主要介绍了电解液添加剂、金属锂保护膜、新形态锂电极等主要改性方法,并对以后锂电极的发展趋势进行了展望。     

关于沉降控制复合桩基在工程中的应用

随着我国经济的快速发展,各个行业都快速的扩张着,而作为基础行业的建筑业也不可避免的快速发展中,并且由于现在各个企业都把自己的利润率和企业的经济效益放在了首位,这就促进了很多新型的技术的发展,也出现了很多的新方法。本文主要介绍了沉降控制复合桩基是什么,并进一步探讨了其在工程中的应用优势。     

A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process

正A radio frequency(RF) receiver frontend for single-carrier ultra-wideband(SC-UWB) is presented. The front end employs direct-conversion architecture,and consists of a differential low noise amplifier(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The proposed LNA employs source inductively degenerated topology.First,the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S_(11) is given.Then,a noise figure optimization strategy under gain and power constraints is proposed,with consideration of the integrated gate inductor,the bond-wire inductance,and its variation.The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band,and has two gain modes to obtain a higher receiver dynamic range.The mixer uses a double balanced Gilbert structure.The front end is fabricated in a TSMC 0.18-/im RF CMOS process and occupies an area of 1.43 mm~2.In high and low gain modes,the measured maximum conversion gain are 42 dB and 22 dB,input 1 dB compression points are -40 dBm and -20 dBm,and S_(11) is better than -18 dB and -14.5 dB.The 3 dB IF bandwidth is more than 500 MHz.The double sideband noise figure is 4.7 dB in high gain mode.The total power consumption is 65 mW from a 1.8 V supply.     

A multi-mode multi-band RF receiver front-end for a TD-SCDMA/LTE/LTE-advanced in 0.18-μm CMOS process

正A fully integrated multi-mode multi-band directed-conversion radio frequency(RF) receiver front-end for a TD-SCDMA/LTE/LTE-advanced is presented.The front-end employs direct-conversion design,and consists of two differential tunable low noise amplifiers(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The two independent tunable LNAs are used to cover all the four frequency bands,achieving sufficient low noise and high gain performance with low power consumption.Switched capacitor arrays perform a resonant frequency point calibration for the LNAs.The two LNAs are combined at the driver stage of the mixer,which employs a folded double balanced Gilbert structure,and utilizes PMOS transistors as local oscillator(LO) switches to reduce flicker noise.The front-end has three gain modes to obtain a higher dynamic range.Frequency band selection and mode of configuration is realized by an on-chip serial peripheral interface(SPI) module.The frontend is fabricated in a TSMC 0.18-μm RF CMOS process and occupies an area of 1.3 mm~2.The measured doublesideband (DSB) noise figure is below 3.5 dB and the conversion gain is over 43 dB at all of the frequency bands. The total current consumption is 31 mA from a 1.8-V supply.