脉冲激光沉积技术沉积温度对PZT/LSAT薄膜生长取向的影响

采用固相法分别制备了标准摩尔配比和铅过垦10%的两种靶材.并利用脉冲激光沉积技术(PLD)在镧锶铝钽(LaSrAlTaO3,LSAT)单晶衬底上成功制备了锆钛酸铅(Pb(Zr0.3Ti0.7)O3,PZT)铁电薄膜,在550～750℃沉积温度范围内研究了PZT薄膜的生长取向和铅含最对薄膜生长取向的影响.利用X射线衍射(XRD)仪和原子力显微镜(AFM)表征了薄膜生长取向和表面形貌.XRD测量表明在标准摩尔配比情况下薄膜牛长从550 C近似c轴取向逐渐过渡到750℃近似a轴取向,而在铅过量情况下薄膜生长取向无明显过渡性变化;AFM测量表明PZT薄膜在近似C轴和a轴生长情况下,表面均方根(RMS)粗糙度分别为16.9 nm和13.7 nm,而在混合生长无择优取向的情况下,薄膜表面均方根粗糙度达到68 nm,这可能是两种取向竞争生长的结果.     

Highly (1 0 0)-oriented Pb(Zr0.20Ti0.80)O3/(Pb1−xLax)Ti1−x/4O3 multilayered thin films prepared by RF magnetron sputtering

The Pb(Zr_0.20Ti_0.80)O₃/(Pb_1−xLa_x)Ti_1−x/4O₃ (x = 0, 0.10, 0.15, 0.20) (PZT/PLT_x) multilayered thin films were in situ deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering technique with a PbO_x buffer layer. With this method, all PZT/PLT_x multilayered thin films possess highly (1 0 0) orientation. The PbO_x buffer layer leads to the (1 0 0) orientation of the multilayered thin films. The effect of the La content in PLT_x layers on the dielectric and ferroelectric properties of the PZT multilayered thin films was systematically investigated. The enhanced dielectric and ferroelectric properties are observed in the PZT/PLT_x (x = 0.15) multilayered thin films. The dielectric constant reaches maximum value of 365 at 1 KHz for x = 0.15 with a low loss tangent of 0.0301. Along with enhanced dielectric properties, the multilayered thin films also exhibit large remnant polarization value of 2P_r = 76.5 μC/cm², and low coercive field of 2E_c = 238 KV/cm.     

Absence of ferromagnetism in ferroelectric Mn-doped BaTiO3 nanofibers

Pure and Mn-doped barium titanate nanofibers were synthesized by the electrospinning method. The morphology, microstructure and crystal structure of as-spun and annealed composite nanofibers were characterized by scanning electron microscopy and transmission electron microscopy. After annealing at 850°C, we obtain nanofibers a few μm long, formed by nanoparticles of irregular shape with sizes around 100 nm. X-ray diffraction and Raman spectroscopy show that a partial phase transition from tetragonal to hexagonal takes place for BaTi_0.90Mn_0.10O₃. Vibrational phonon modes were calculated for BaTiO₃ within the density functional theory (DFT) framework. Ferroelectricity has been probed on pure and Mn-doped BaTiO₃ nanofibers, by means of piezoresponse force microscopy in an atomic force microscope, confirming the polar domain switching behavior of the fibers. The measured piezoelectric coefficient d₃₃ were 31 and 22 pm/V for BaTiO₃ and BaTi_0.90Mn_0.10O₃. Magnetic properties of the samples were probed in a superconducting quantum interference device. Diamagnetic and paramagnetic behaviors were found in pure and Mn-doped samples, respectively.     

Dielectric and impedance spectroscopic study of lithium doped potassium tantalum niobium oxide

The (K_0.90Li_0.10) (Nb_0.80Ta_0.20)_0.99Mn_0.01O₃ (KLTN) ceramic has been synthesized by the conventional solid-state reaction route. The Rietveld refinement X-Ray diffraction (XRD) patterns confirmed the single-phase orthorhombic crystal structure with space group Amm2. The frequency dependent electrical properties were examined by the complex dielectric and impedance spectroscopy in the temperature range 30 °C–500 °C where multiple structural phase transition was observed with high dielectric constant, low tangent loss and well saturated electric polarization. The shifting of the ferroelectric phase transition temperature by 30 °C in heating and cooling mode suggests the irreversible motion of the domains and domain walls and significant effects on grain boundaries on structural phase transition temperature. A series of phase transitions from orthorhombic to tetragonal (∼190 °C) and tetragonal to Cubic (∼390 °C in cooling and 420 °C in heating) have been obtained in the wide range of temperature. The different type of analogy such as Modulus formalism, complex impedance spectra, frequency dependent conductivity, the activation energy of charge carriers has been used to understand the microstructure-electrical properties relation.     

铌钽酸钠钾锂-铟酸铋铁电压电性能的研究

采用传统固相合成法制备了(1-x)(0.97Na_0.5K_0.5NbO₃+0.03LiTaO₃)+xBiInO₃[(1-x)(KNN+LT)+xBI]无铅压电陶瓷, 研究了该体系的晶体结构、压电、铁电与介电性能。结果表明: (1-x)(KNN+LT)+xBI陶瓷的晶体结构在室温下为正交相和四方相两相共存, 随着BI含量的增加, 四方相含量逐渐增多, 居里温度T_c降低, 但是正交四方相转变温度T_o-t呈现升高趋势, 晶格参数逐渐增大。随着BI含量的继续增加, Bi在高温下的挥发导致氧空位的增多, 从而使材料性能下降。在x=0.0015时得到组分的最佳性能, 其居里温度T_c、相转变温度T_o-t、压电常数d₃₃、剩余极化P_r、矫顽场E_c分别达到400℃、126℃、160 pC/N、19.26 μC/cm2和7.75 kV/cm。     

多孔PZT95/5铁电陶瓷的机械性能和铁电性能研究

采用添加造孔剂的方法制备多孔锆钛酸铅(PZT95/5)铁电陶瓷, 研究了孔结构包括孔隙率、孔径及孔形状对多孔PZT95/5陶瓷机械性能和电性能的影响及机理, 并揭示多孔PZT95/5陶瓷微观结构、机械性能和铁电性能的内在联系。研究表明: 孔隙率的增加降低了多孔PZT95/5陶瓷的声阻抗, 改善了陶瓷与封装材料的声阻抗匹配. 孔隙率增加, 多孔PZT95/5陶瓷的屈服应力和剩余极化强度降低, 矫顽场强增大。孔结构对多孔PZT95/5陶瓷屈服应力的影响可由应力集中理论解释; 多孔PZT95/5陶瓷剩余极化强度随孔结构的变化可用内应力结合空间电荷理论加以解释。     

超薄钛酸铅纳米管铁电性和力电耦合特性的第一性原理研究

利用基于密度泛函理论的第一性原理的方法研究了超薄钛酸铅(PbTiO₃)纳米管的铁电性及力电耦合特性。研究发现对于钛酸铅铁电纳米管结构, 即使在其特征尺寸小于铁电薄膜的铁电临界尺寸时, 依然存在自发极化。钛酸铅铁电纳米管结构不存在铁电临界尺寸。对纳米管力电耦合效应的研究发现, 轴向应变作用会引起包括极化沿轴向方向的铁电相、顺电相和极化沿周向方向的铁电相在内的丰富的相转变。这种相的转变是由于轴向应力所导致的Pb-O共价键的变化所引起的。另一方面, 研究了钛酸铅纳米管结构的机械强度, 明确了在轴向拉伸和压缩作用下纳米管的临界载荷。     

Sol-gel法制备多铁性Bi_(0.85)Eu_(0.15)FeO_3薄膜及其性能

采用Sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Bi0.85Eu0.15FeO3薄膜。研究了退火温度对其晶相形成的影响,发现在较低温度退火(450℃)时,Bi0.85Eu0.15FeO3晶相开始形成,但存在杂相,而且结晶度较差;在490～600℃可以获得结晶较好的单相Bi0.85Eu0.15FeO3薄膜。同时对经550℃退火的薄膜的介电、铁电和铁磁性能进行了研究,结果表明,Bi0.85Eu0.15FeO3薄膜具有较好的介电及铁磁性能。当测试频率为1MHz时,薄膜的介电常数和介电损耗分别为80、0.024,饱和磁化强度约为26.2emu/cm3。     

THREE DIMENSIONS PHASE FIELD SIMULATION OF MECHATRONIC COUPLE FOR FERROELECTRIC MATERIALS

利用三维相场理论模拟了铁电材料的自发极化、电滞回线以及力电耦合对畴变的影响. 结果表明, 外场下的畴变是通过新畴形核及畴壁移动所引起的长大实现的. 逐渐改变外场时, 在矫顽场附近各类电畴均发生90°畴变, 从而导致极化强度突变. 沿垂直电场方向加 拉、压应变能阻止或促进沿电场方向的畴变.     

近化学计量比LiNbO3晶体电畴结构观察和机理探讨

采用双坩埚提拉法(DCCZ)生长了各种不同成分的近化学计量比LiNbO₃晶体, 并用腐蚀法观察了其电畴结构. 结果表明, 化学成分对未经极化处理晶体的电畴结构起决定性作用, 当Li₂O 含量处于49.4mol%附近时, 晶体z面电畴呈现特殊的三次对称反畴; 当晶体中Li₂O含量为49.7mol%时, 晶体为完全单畴. 本文对其形成机理进行了探讨, 认为在由顺电相向铁电相转变 时, 局部铁电畴的极性方向与该处沿z轴方向的温度梯度正负密切相关, z轴生长晶体时, 由于相变发生所处位置离生长界面的距离受LiNbO₃晶体计量比影响, 所处温场固有温梯也 随之不同, 在此基础上解释了不同成分晶体的电畴结构形成原因. 最后讨论了控制铁电畴结构的工艺措施.