全文获取类型
收费全文 | 1250篇 |
免费 | 81篇 |
国内免费 | 39篇 |
专业分类
电工技术 | 25篇 |
综合类 | 49篇 |
化学工业 | 475篇 |
金属工艺 | 76篇 |
机械仪表 | 15篇 |
建筑科学 | 34篇 |
矿业工程 | 34篇 |
能源动力 | 51篇 |
轻工业 | 19篇 |
水利工程 | 64篇 |
石油天然气 | 23篇 |
武器工业 | 2篇 |
无线电 | 91篇 |
一般工业技术 | 168篇 |
冶金工业 | 212篇 |
原子能技术 | 13篇 |
自动化技术 | 19篇 |
出版年
2024年 | 1篇 |
2023年 | 31篇 |
2022年 | 41篇 |
2021年 | 47篇 |
2020年 | 46篇 |
2019年 | 32篇 |
2018年 | 56篇 |
2017年 | 55篇 |
2016年 | 50篇 |
2015年 | 43篇 |
2014年 | 50篇 |
2013年 | 59篇 |
2012年 | 83篇 |
2011年 | 91篇 |
2010年 | 59篇 |
2009年 | 76篇 |
2008年 | 58篇 |
2007年 | 73篇 |
2006年 | 68篇 |
2005年 | 53篇 |
2004年 | 39篇 |
2003年 | 51篇 |
2002年 | 29篇 |
2001年 | 40篇 |
2000年 | 25篇 |
1999年 | 30篇 |
1998年 | 14篇 |
1997年 | 6篇 |
1996年 | 11篇 |
1995年 | 11篇 |
1994年 | 3篇 |
1993年 | 12篇 |
1992年 | 6篇 |
1991年 | 10篇 |
1990年 | 5篇 |
1989年 | 1篇 |
1988年 | 2篇 |
1987年 | 1篇 |
1984年 | 1篇 |
1976年 | 1篇 |
排序方式: 共有1370条查询结果,搜索用时 29 毫秒
991.
Shinichiro Nagano Sang‐Hun Jang Jae‐Wook Kang Yong‐Mi Yu Chun‐Gyoo Lee 《Journal of the Society for Information Display》2010,18(12):1095-1103
Abstract— A nano‐particle dielectric layer was experimentally placed between a conventional dielectric layer and a MgO thin film. This greatly reduces the discharge current and enhances high luminous efficacy. The current reduction might reflect a capacitance reduction in the entire dielectric layer due to the extremely low permittivity of the nano‐particle layer which includes a large amount of space. The luminous efficacy is improved more than what is expected because of the reduction in capacitance. The layer affects the MgO film properties such as crystal growth size, orientation, cathode luminescence, and exo‐electron emission. As a result, it improves the statistical delay in addressing. This might be caused by the large crystal growth of MgO due to the surface roughness of the nano‐particle layer underneath. The particle size required to optimize the roughness of the large growth is about 10–50 nm. The rise in the discharge voltage accompanied by the nano‐particle layer insertion is improved when the layer is properly patterned. A reduction in luminance is prevented when it is patterned in narrow lines along the X—Y gaps while the improvement in address delay strongly depends on the areal ratio of the nano‐particle layer. 相似文献
992.
Georgios Taralas 《加拿大化工杂志》1999,77(6):1205-1214
A mechanistic reaction model of the pyrolysis of vaporized n-heptane in the presence of steam (P ≈? 18&–32 kPa) is developed based on overall first-order decomposition kinetics, which satisfactorily describes the experimental data. The mechanistic model predicted that calcined, naturally occurring and readily available mineral rocks, Swedish quarried calcium oxide (quicklime) and Norwegian (Norsk Hydro) magnesium oxide (dolomitic magnesium oxide) applied as the catalytic materials increase the conversion of the vaporized feedstock (P = 2.9–4.7 kPa) without changing the distribution of light α-olefins (i.e., C2H4, C3+, C4H8), compared to pyrolysis in an empty reactor viz. thermal steam-cracking. The simulation calls attention to the fact that the endothermic pyrolysis reaction of the alkane n-heptane is proceeding not only in the homogeneous gas-phase but also on the mineral particles (catalytic cracking) with the same mechanism. 相似文献
993.
994.
995.
996.
本文研制了一套膨胀应力测试装置,并以此为基础测试了约束条件下MgO膨胀剂(MEA)压实体和掺MgO膨胀剂水泥浆体中水化产生的膨胀应力;采用X射线衍射法定量分析了MgO的含量,并计算MgO的水化程度。结果表明:活性指数为23s和46s的MgO膨胀剂压实体水化22d产生的膨胀应力分别为38.9MPa和62.7MPa;掺水泥浆体的膨胀应力随MEA掺量增大、MEA活性指数提高和MgO水化程度增加而增大,不掺MgO膨胀剂的水泥浆体63d时的收缩应力为1.3MPa,掺12%活性指数为23s和46s的MgO膨胀剂水泥浆体在63d时的膨胀应力分别为1.8MPa和3.0MPa。 相似文献
997.
Masaharu Terauchi Jun Hashimoto Hikaru Nishitani Yusuke Fukui Michiko Okafuji Hitoshi Yamashita Hiroshi Hayata Takafumi Okuma Hitoshi Yamanishi Mikihiko Nishitani Masatoshi Kitagawa 《Journal of the Society for Information Display》2008,16(12):1195-1201
Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process. 相似文献
998.
为了促进外掺MgO混凝土的深入研究和推广应用,本文对现行水工混凝土中MgO安定掺量的五种判定方法进行了对比分析。结果表明,根据现行判定方法确定的MgO外掺量生产的MgO混凝土,其自身体积膨胀量很难满足补偿坝体混凝土温降收缩量的需要。对于如何科学合理地提高水工混凝土的MgO掺量,仍然需要深入研究。同时建议,利用实际工程的原材料和混凝土配合比,开展直接根据混凝土试件的自生体积膨胀量来确定水工混凝土中MgO外掺量的研究。 相似文献
999.
自生体积变形是MgO混凝土在工程应用中最重要的性能之一。系统研究了MgO膨胀剂品种和掺量、水泥品种、骨料种类、粉煤灰掺量等原材料以及水胶比对龄期长达1 400 d的MgO混凝土自生体积变形性能的影响。结果表明:掺入4%~6%、活性反应时间为50~200 s的MgO膨胀剂后,混凝土的自生体积变形经过2 a左右逐渐趋于稳定,无倒缩或不收敛现象;水泥中MgO含量并不能真实反映产生有效膨胀的方镁石含量;骨料长期吸水率与MgO混凝土的自生体积变形存在着良好的对应关系,骨料吸水率越高,其MgO混凝土自生体积膨胀变形越小。 相似文献
1000.
S. Ho S. Nobuki N. Uemura S. Mori T. Miyake K. Suzuki Y. Mikami M. Shiiki S. Kubo 《Journal of the Society for Information Display》2009,17(12):1059-1068
Abstract— An analytical method to determine the density of energy states of electron‐emission sources (EESs) in chemical‐doped MgO is described using a discharge probability model and a thermal excitation and emission model. The density of energy states for multiple types of EESs is represented by using a linear combination of Gaussian functions of which parameters are determined by the theoretical emission time constant of an exoelectron and statistical delay time ts extracted from experimental stochastic distributions of discharge delay time in plasma‐display panels. When applied to Si‐doped MgO, the effective number of Si EES is calculated to be 1.8 × 106 per cell. The average and standard deviations of activation energy have an energy level of 770 meV and a large value of 55 meV. In Si and H co‐doped MgO, the high peak density of [H2?]0 appears at 550 meV. ts at the short time interval of 1 msec decreases and is independent of temperature due to exoelectron emission from the [H2?]0. The dependence of ts at a time interval of 10 msec on temperature becomes weak because the energy structure of the Si EES broadens significantly attributed to the electrostatic effects of the doped H atoms. 相似文献