T型管内油水分离特性的CFD-PBM数值模拟

目前关于T型管内油水分离特性的数值模拟大多采用Euler-Euler多相流模型,考虑管内油滴粒径分布及其对油水分离特性影响的研究工作尚未见报道。对T型管内的油水两相流动情况和分离特性进行了CFD-PBM数值模拟,并进行了室内实验以验证模拟结果的准确性。结果表明,T型管内油滴粒径随流体流动方向具有逐渐增大的趋势;增大来液中的油滴粒径分布可以有效提高油水分离效率,反之当来液中的油滴粒径较小时,油水两相在T型管内不易分离,相分配比始终与分流比几乎相同;分流比、Reynolds数等操作条件对油水分离效率的影响程度与油滴粒径密切相关,应慎重选取适当的操作条件以保证T型管的油水分离效率。     

High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

This paper presents the design and fabrication of an etched implant junction termination extension(JTE) for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices.     

Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer

Copper indium gallium selenium (CIGS) thin film solar cells have become one of the hottest topics in solar energy due to their high photoelectric transformation efficiency. To real applications, CIGS thin film is covered by the buffer layer and absorption layer. Traditionally, cadmium sulfide (CdS) is inserted into the middle of the window layer (ZnO) and absorption layer (CIGS) as a buffer layer. However, the application of the GIGS/CdS thin film solar cells has been limited because of the environmental pollution resulting from the toxic cadmium atom. Although zinc sulfide (ZnS) has been proposed to be one of the candidates, the performance of such battery cells has not been investigated. Here, in this paper, we systematically study the possibility of using zinc sulfide (ZnS) as a buffer layer. By including the effects of thickness, concentration of a buffer layer, intrinsic layer and the absorbing layer, we find that photoelectric transformation efficiency of ZnO/ZnS(n)/CIGS(i)/CIGS(p) solar cell is about 17.22%, which is qualified as a commercial solar cell. Moreover, we also find that the open-circuit voltage is~0.60 V, the short-circuit current is~36.99 mA/cm² and the filled factor is~77.44%. Therefore, our results suggest that zinc sulfide may be the potential candidate of CdS as a buffer layer.     

室温溶液制备半嵌入银纳米线复合透明电极

采用室温下聚合物溶液一步降阻工艺，在裸银纳米线电极表面涂覆羟乙基纤维素（HEC）溶液，制备了纤维素银纳米线复合透明电极（HEC-AgNWs-PET）。通过SEM、AFM、UV-Vis等对电极表面形貌和性能进行了表征与测试。结果表明，在裸银纳米线电极表面涂覆质量分数为0.50%的HEC溶液后，将电极（透光率为87.7%）的初始薄层电阻从27 Ω·sq-1降低至14 Ω·sq-1，而对透光率几乎无影响。HEC溶液形成的纳米膜降低了电极表面粗糙度。复合电极在12 d的加速降解测试中表现出优异的电化学稳定性，并且在2400次内外弯曲测试中，其阻值分别变为1.35和1.45倍，远小于裸银纳米线电极的阻值变化量。     

Electrical properties of MgO/p-diamond junction fabricated on homoepitaxial single-crystalline diamond

Sufficiently flat and hillock-free insulating homoepitaxial diamond films were successfully grown on high-pressure–high-temperature-synthesized diamond using a 5-kW microwave-plasma chemical-vapor-deposition system with a 20-ppm-nitrogen-included source gas of 4% CH₄ diluted with H₂. Then, layered MgO/boron-doped (p-type) diamond structures were fabricated on the homoepitaxial insulating diamond. Current (I)–voltage (V) characteristics of these device structures showed strong nonlinear behaviors for both current directions, or those for two electrically-parallel, reversed diodes, with conduction limited mainly by sheet resistance of the p-diamond layer in a temperature range from 300 to 600 K. This suggests that the carrier transport occurred through different current passes in the junction region at both biases. Low-frequency capacitances measured were mainly dominated by the depletion capacitance which was influenced by the bias voltage. At relatively high frequencies, however, the total capacitance measured (C) was determined not only by the depletion capacitance but also by the series resistance and the dispersion capacitance. Equivalent circuits of the MgO/p-diamond structure were deduced to explain the measured I–V and C–V results. A possible conduction mechanism is proposed in relation to the electronic structure of the MgO/p-diamond junction.     

2000～2001年磁记录材料及其应用的新进展

综述了2000～2001年间国内外磁记录材料及其应用的若干新进展,包括垂直磁记录系统、巨磁电阻磁存储器和磁传感器、合成多层膜磁记录介质、磁隧穿型磁头材料、磁光记录介质材料。     

In-situ investigation of grain boundary and triple junction kinetics in aluminium – 10 p.p.m. magnesium

A special technique for in‐situ observation and recording of triple junction motion is introduced. The described method makes it possible to study the motion of connected grain boundaries, i.e. triple junctions and their geometry. The results of an investigation of the steady‐state motion of grain boundary systems with triple junctions in aluminium–magnesium are presented. The analysed triple junctions show a distinctive deviation of contact angle from the equilibrium value 120° as assumed for the deviation of the Von Neumann–Mullins relation. The type of triple junction can have an essential influence on grain boundary motion and thus on grain growth.     

热电分离式铜基板的制备及其在LED散热领域的应用

借鉴热电分离式设计理念,利用图形转移和蚀刻技术将铜合金板材加工成带有导热柱的底座,然后通过压合工艺将金属底座与FR4复合制备成热电分离式金属基板。利用冷热冲击试验箱对基板进行了热冲击试验,并借助SEM对历经1 000个高低温突变冷热循环后的铜基材与FR4界面形貌进行了观察与研究。利用结温测试仪、功率计、积分球系统、半导体制冷温控台等仪器和设备,通过结温及热阻测试对比研究了普通铜基板与热电分离式铜基板在铜基、绝缘层及线路层厚度相同的情况下,对大功率LED模组散热效果的影响。结果表明,基板在经低温-55℃、高温125℃、1 000次冷热循环后,铜基材与FR4界面处既无裂纹萌生,也无气泡产生,FR4与铜基材结合完好。对于驱动功率为13W的LED灯珠,在模组辐射功率与热功率大致相同的情况下,热电分离式铜基板与普通铜基板所对应的芯片结温分别为49.72和73.14℃,所对应模组的热阻则分别为2.21和4.37℃/W,这意味着热电分离式铜基板较之普通铜基板在大功率LED散热管理方面更具优势。     

扩散热阻对FR4/AlN复合材料导热性能的影响

首先,将AlN陶瓷表面金属化后分别切割成10 mm×10 mm×1.0mm、12 mm×12 mm×1.0 mm及15 mm×15 mm×1.0mm的方块,嵌入环氧树脂中制备成FR4/AlN复合材料;然后,利用SMT工艺将同款LED灯珠与上述内置三种不同尺寸AlN的复合基板材料组装成LED模组;最后,利用结温测试仪与半导体制冷温控台对三种LED模组分别进行了结温测试.同时,结合热仿真手段对复合材料水平面的温度分布情况进行了模拟研究.结果表明:上述三种尺寸陶瓷片对应LED的结温分别为96.95、92.94与91.81℃.热仿真结果显示,陶瓷片尺寸通过界面热阻对扩散热阻产生影响,增大陶瓷片尺寸有助于降低扩散热阻,进而改善FR4/AlN复合材料的整体散热性能.     

功率半导体器件击穿特性及结终端结构参数研究

根据功率半导体器件(如BJT、VDMOSFET等)的结终端结构特点,利用TCAD半导体器件仿真软件全面系统的分析了结终端高浓度扩散区结深及三种不同结终端保护结构(结终端延伸结构、浮空场限环结构及结终端刻蚀结构)参数对器件击穿特性的影响.仿真结果表明:对于终端高浓度扩散区,当表面浓度一定时,随着扩散区结深的增大,器件击穿电压呈现出先增大后减小的变化特点. PN结终端柱面结边缘区域的电场局部集中是导致器件击穿电压降低的主要因素.对于三种不同的结终端保护结构,均可有效地降低柱面结边缘电场强度,显著地改善器件的反向击穿特性.对比三种结终端保护结构,结边缘刻蚀结构对器件击穿特性的改善效果较好.