Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

Electrical and magnetic properties of double perovskite: Y2CoMnO6

In this communication, the structural, micro-structural, dielectric, electrical, magnetic, and leakage-current characteristics of a double perovskite (Y₂CoMnO₆) ceramic material have been reported. The material was synthesized via a high-temperature mixed-oxide route. The compound crystallizes in a monoclinic structure which is confirmed from preliminary X-ray structural study. The morphological study by using scanning electron micrograph reveals the almost homogeneous distribution of grains throughout the surface of the sample. The nature of frequency-dependence of dielectric constant has been described by the Maxwell-Wagner model. The occurrence of a dielectric anomaly in the temperature dependence of dielectric permittivity study demonstrates the ferroelectric-paraelectric phase transition in the material. From the Nyquist plots, we found the existence of both grain and grain boundary effects. The frequency dependence of conductivity was studied by the Jonscher’s Power law, and the conduction phenomenon obeys the large overlapping polaron tunneling model. By using the Arrhenius equation, the activation energy has been calculated which is nearly equal to the energy required for the hoping of the electron. Both impedance and conductivity analysis demonstrate that the sample exhibits negative temperature coefficient of resistance (NTCR) properties indicating the semiconducting type of material at high temperatures. The anti-ferromagnetic character of the material is observed from the nature of magnetic hysteresis loop. The leakage current analysis suggests that the conduction process in the material follows the space charge limited conduction phenomenon. Such material will be helpful for modern electronic devices and spintronic applications.     

Influence of Se and Te substitutions at Tl-site of Tl(Ba,Sr)CaCu2O7 superconductor on the AC susceptibility and electrical properties

The Sr and Ba bearing Tl-1212 phase, Tl(Ba,Sr)CaCu₂O₇ is an interesting superconductor. The Sr only bearing TlSr₂CaCu₂O₇ is not easily prepared in the superconducting form. The Ba only bearing TlBa₂CaCu₂O₇ on the other hand does not show improvement in the transition temperature with elemental substitution. In this work the influence of multivalent Se (non-metal) and Te (metalloid) substitutions at the Tl-site of Tl_1-xM_x(Ba,Sr)CaCu₂O₇ (M = Se or Te) superconductors for x = 0–0.6 was studied. The samples were prepared via the conventional solid-state reaction method. XRD patterns showed a single Tl-1212 phase for x = 0 and 0.1 Se substituted samples. The critical current density at the peak temperature, T_p of the imaginary (χ”) part of the AC susceptibility (χ = χ’ +χ”), J_c-inter(T_p) for all samples was between 15 and 21 A cm⁻². The highest superconducting transition temperature was shown by the x = 0.3 Se-substituted sample (T_c-onset = 104 K, T_c-zero = 89 K, T_cχ’ = 104 K and T_p = 80 K). Te suppressed the superconductivity of Tl-1212 phase. The order of highest transition temperatures are as follows: Tl_1-xTe_x(Ba,Sr)CaCu₂O₇<Tl(Ba,Sr)CaCu₂O₇<Tl_1-xSe_x(Ba,Sr)CaCu₂O₇. This work showed that Se was better than Te in improving the transition temperature and flux pinning of the Tl-1212 phase. The roles of ionic radius of Se and Te on the superconductivity of Tl(Ba,Sr)CaCu₂O₇ are discussed in this paper.     

超宽带大功率合成器设计北大核心CSCD

在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。     

Temperature dependent negative permittivity in solid solutions Sr2Mn1-xSnxO4 (x = 0, 0.3, 0.5)

A few compositions of the system Sr₂Mn_1-xSn_xO₄ (x = 0.0, 0.3, 0.5) were synthesized in the air by the solid-state ceramic route. A change in the sign (positive to negative) of the permittivity above a particular temperature (T_C) is observed at all the measured frequencies. The negative permittivity was analyzed by the Drude-Lorentz model. It was found that negative permittivity is caused by the plasma oscillations of thermally excited free charge carriers. Analysis of XPS spectra confirmed the presence of mixed-valence states of both Mn (Mn⁴⁺ and Mn³⁺) and Sn (Sn⁴⁺ and Sn²⁺) ions. The UV–vis.-IR spectroscopy results indicated generation of a large number of defect states in the forbidden bandgap region of Sr₂MnO₄ on the substitution of Sn at Mn site. Synthesized samples are promising metamaterials for radio frequency (10 Hz -2 MHz) region applications due to the high-temperature plasmonic behavior.     

Full AC analysis of value of DER to the grid and optimal DER scheduling

This paper presents part of the work ComEd and Quanta Technology have performed to quantify the locational and temporal value of DER to avoid distribution grid upgrade investments. It focuses on the formulation of a robust and efficient algorithm for DER optimal dispatch on a distribution feeder to mitigate the violation of current and voltage limits using the allocated cost of capacity and locational marginal value of real and reactive DER injection/withdrawal.     

Indirect charge transfer of holes via surface states in ZnO nanowires for photoelectrocatalytic applications

In this work, ZnO nanowires with high aspect ratio were obtained by fast and simple electrochemical anodization. Morphological, structural and photoelectrochemical characteristics of the synthesized ZnO nanowires were evaluated by using different techniques: field emission scanning electron microscopy, atomic force microscopy, high resolution transmission electron microscopy, Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–VIS spectroscopy, Mott-Schottky analysis and photoelectrochemical impedance spectroscopy. The synthesized ZnO nanowires presented high roughness and high crystallinity. Besides, surface defects were identified in the sample. The value of the donor density (N_D) was in the order of 10¹⁹ cm^?3 in the dark and 10²⁰ cm^?3 under illumination. In addition, the ZnO nanowires presented good photosensibility, with a photocurrent density response 85 times higher than a ZnO compact layer, and lower resistance to charge transfer. The charge transfer processes taking place at the ZnO/electrolyte interface were studied, since these processes strongly influence the photoelectrocatalytic efficiency of the material. According to the results, the charge transfer of holes in the synthesized ZnO nanowires occurs indirectly via surface states. In this regard, surface states may be an important feature for photoelectrocatalytic applications since they could provide lower onset voltages and higher anodic current densities.     

Relationship between the inductive response observed during electrochemical impedance measurements on aluminium and local corrosion processes

In situ real-time imaging and electrochemical impedance spectroscopy (EIS) measurements were performed on pure aluminium, aluminium-copper and copper electrodes, with the aim to elucidate the relationship between the shape of EIS spectra and the local processes occurring on the surface of corroding aluminium, with particular attention to the appearance of inductive behaviour. When a stable oxide was present on the aluminium surface, the impedance modulus increased with decreasing frequencies, indicating the absence of inductive behaviour. Conversely, the presence of depassivating condition coupled with the availability of some anodic current, generated localized corrosion and associated hydrogen evolution at the corrosion front (also known as superfluous hydrogen evolution). In these conditions, a clear inductive behaviour was observed, regardless on the source of the anodic current at the corrosion front, i.e. galvanic coupling or external anodic polarization.     

载荷影响下的机电阻抗协整结构损伤识别方法

高频机电阻抗(electromechanical impedance, 简称EMI)方法利用粘贴在结构表面的压电传感器(piezoelectric transducer, 简称PZT)进行主动激励，通过连续监测和分析PZT机电导纳信号的变化评估结构的健康状态；然而EMI方法容易受到环境工况变化的影响，导致结构损伤的误报。针对此问题，采用时间序列协整方法处理及消除结构工作载荷对阻抗谱特征信号的影响。该方法是基于结构动荷载作用下PZT阻抗谱导纳信号的非平稳特征，将动荷载影响下的阻抗谱非平稳时间序列经线性组合变换成平稳时间序列，根据得到的协整余量序列有效判断结构的健康状态。为验证该方法的有效性，开展了动应力影响下铝梁结构的螺栓松动损伤识别实验。结果表明，协整消除了动态应力对EMI方法的影响，当铝梁内存在持续变化的应力时，仍可以准确识别螺栓松动。机电阻抗协整方法能够消除结构健康监测中荷载作用的影响，及时准确地进行结构损伤识别。