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本文研究了用高频辉光放电方法生长的微晶Si:H(μc-Si:H)薄膜中由光激发产生的自由载流子吸收。测量采用双光束法:一个是Ar离子激光光束,起激发载流子作用,另一个是红外光束,起探测作用。被激发的处在传导带的载流子或激发之后又陷在带尾局域态的载流子吸收了探测光的能量,跳到更高的能级。由透过样品的探测光的相对改变量 相似文献
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We have studied TV content influence in two ranges of x(R1.,R2) by Raman, PL, IR spectra on PCVD a-Si:H/a-SiNx:H samples with constant sublayer thickness and cycle number but whole range of x respectively. Raman shows that the FWHM of TO-like peaks increases with x in range R1 and so does the bond angle fluctuation. PL exhibits that the band tail width increases and the NR activation energy as well as the PL efficiency decrease? with x in R1, because of the increase of lattice strain introduced by structural mismatch at interfaces. The above parameters change towards the opposite direction in R2 with a turn at x=0.9, This might be caused by the structure change of a-SiNx into Si3N4 and the greatly increasing of N-H bonds in R2, which enhances the softness of the matrix and relaxes the lattice strain. 相似文献
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We have studied the conduction mechanism of a series of a-Si:H/a-SiNx:H multi-layers samples which have an identical sublayer thickness and periodic numbers, except the ratio of N/Si in a-SiNx:H sublayers. It is shown that the temperature characteristic of conductivity of these samples has a kink point in the range of 120-140℃. The kink temperature and the acttivation energy of conductivity are related to the N/Si ratio in the a-SiNx:H sublayers. We recognized preliminarily that the mechanism above and below the kink temperature could be the bulk or the interfacial conduction in a-Si:H well layers. 相似文献
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作者选取在非晶硅晶化温度附近(550~800℃)用控制生长温度的办法制备出具有不同晶粒大小的多晶与非晶硅薄膜.在100~700K温度范围内测量了直流电导率随温度的变化.随着晶粒尺度的变化在logσ~1/T曲线图中呈现出2~4种导电过程.作者分析了晶粒尺度对导电过程的作用. 相似文献
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本文研究了用辉光放电热分解硅烷方法淀积的微晶-Si:H薄膜的Steabler Wronski(SW)效应。用改变高频功率的方法,获得从非晶到具有不同晶粒大小的微晶薄膜。晶粒尺度用小角散射方法,由Guinier公式算出。样品采用蒸铝条状共面电极结构。测量电导所加电场约为270V/cm,保证良好的欧姆接触。样品在干氮保护下,经180℃,40分钟退 相似文献
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用电子自旋共振(ESR)方法研究了含纳米晶粒:a-Si:H薄膜的缺陷态.这种薄膜是用等离子体增强CVD方法制备而成,未经任何后处理过程,在室温观察到可见光范围的光致发光.薄膜的ESR谱由三个部分组成:(1)一对轴向对称超精细谱线,其g∥=1.9967,g⊥=2.0016,其超精细常数为1.2×10-2T;(2)一条各向同性谱线,其g=2.0052.线宽△Hpp=1×10-3T;(3)一条轴向对称谱线,其g∥=2.0057,g⊥=2.0042.以上三部分分别来源于三个不同的顺磁中心本文分析了它们的产生, 相似文献