第三代红外焦平面探测器读出电路

对红外探测器不断增长和提高的需求催生了第三代红外焦平面探测器技术。根据第三代红外探测器的概念,像素达到百万级,热灵敏度NETD达到1 m K量级是第三代制冷型高性能红外焦平面探测器的基本特征。计算结果表明读出电路需要达到1000 Me-以上的电荷处理能力和100 d B左右的动态范围(Dynamic Range)才能满足上述第三代红外焦平面探测器需求。提出在像素内进行数字积分技术,以期突破传统模拟读出电路的电荷存储量和动态范围瓶颈限制,使高空间分辨率、高温度分辨率及高帧频的第三代高性能制冷型红外焦平面探测器得到实现。     

线列TDI型红外焦平面读出电路低功耗设计

摘要：基于对具有TDI功能的红外线列读出电路工作原理的分析,通过改变电路的工作电流及工作时间进行低功耗设计,最后分别对优化前后的读出电路进行直流仿真,仿真结果显示优化后读出电路功耗较原始电路降低了49.5%,验证了低功耗设计方案的可行性。     

一种新颖的带背景抑制红外读出单元电路

设计了一种带新型背景抑制技术的红外读出电路,该电路通过控制开关管的导通与关断,使背景抑制电流源在积分过程中间断性地产生背景抑制电流.同时,背景抑制电流产生管工作在强反型区,减小了由工艺失配和噪声所引起的单元电路间背景抑制电流的变化,降低了电路的背景抑制非均匀性.所提出的读出电路基于CSMC DPTM(双晶三铝)0.5 ...     

焦平面阵列读出电路研究和应用

焦平面(FPA)如果要获得较好的探测性能,就必须尽可能提高探测器的信噪比.读出电路因为可以很好地改善探测器的性能,获得快速的研究和发展,现已发展出多种结构形式,应用越来越广泛.本文主要介绍了各种读出电路的结构和应用.     

一种应用于线列TDI型红外焦平面的数字化读出电路

对于红外焦平面的数字化一直是当前的研究热点之一,如何满足红外焦平面器件的功耗和面积要求,同时还能达到足够高的转换速率和转换精度是目前存在的一个的难点。针对线列TDI型红外焦平面的特点,提出一种新型SAR型ADC的方法并设计相应的读出电路,通过在SMIC 0.18μm工艺下模型的仿真,该读出电路可以达到最高80.2 dB的信噪比的情况下,功耗仅为230μW。     

Monolithically integrated HgCdTe focal plane arrays

The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems.     

基于电容读出的非制冷红外探测器

介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射，其响应波长为8～12 μm 。由于氮化硅和铝的热膨胀系数相差很大，用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲，微悬臂梁和衬底形成一个可变电容，通过检测电容的变化来反映微悬臂梁的弯曲，从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取，微悬臂梁的电容灵敏度可达2.5 fF/K，温度分辨率为0.1 K。     

Modeling and simulation of temperature drift for ISFET-based pH sensor and its compensation through machine learning techniques

The paper presents modeling and simulation of ion-sensitive field-effect transistor (ISFET)-based pH sensor with temperature-dependent behavioral macromodel and proposes to compensate the temperature drift in the sensor using intelligent machine learning (ML) models. The macromodel is built using SPICE by introducing electrochemical parameters in a metal-oxide-semiconductor field-effect transistor (MOSFET) model to simulate ISFET characteristics. We account for the temperature dependence of electrochemical and semiconductor parameters in our macromodel to increase its robustness. The macromodel is then exported as a subcircuit element, which is used to design the readout interface circuit. A simple constant-voltage, constant-current (CVCC) topology is utilized to generate the data for temperature drift in ISFET pH sensor, which is used to train and test state-of-the-art ML-based regression models in order to compensate the drift behavior. The experimental results demonstrate that the random forest (RF) technique achieves the best performance with very high correlation and low error rate. Corresponding curves for output signal using the trained models show highly temperature-independent characteristics when tested for pH 2, 4, 7, 10, and 12, and we obtained a root mean squared error (RMS) variation of ΔpH ≤ 0.024 over a temperature range of 15°C to 55°C in comparison with ΔpH ≤ 1.346 for uncompensated output signal. This work establishes the framework for integration of ML techniques for drift compensation of ISFET chemical sensor to improve its performance.     

多谱段线列红外探测器读出电路设计优化

集成电路制造技术的发展使单芯片集成多谱段红外探测器成为可能,其中长线列红外探测器读出电路设计遇到的挑战之一就是寄生效应。针对一款多谱段长线列用读出电路在最小积分电容时行间输出电平差异显著,导致成像出现明暗条纹的现象进行了测试分析,得出复杂的电路版图寄生效应是主要原因。通过优化设计及流片验证,解决了寄生效应导致的成像明暗条纹问题。     

薄膜型热释电探测器红外响应模型分析

在进行热释电焦平面探测器ROIC（读出电路）设计时，必须充分考虑热释电探测器的红外响应特性，并根据探测器等效电路的SPICE模型进行设计仿真。从热释电探测器的热平衡方程出发，在Matlab平台上分析模拟了探测器对脉冲函数调制状态下的瞬态响应，并根据提供的薄膜材料参数在具体应用中建立了热释电探测器的等效电路模型。把探测器等效电路模型与SFD（源跟随器）型输入单元读出电路连接后进行模拟仿真，分析了不同条件下热释电探测器／读出电路组件的响应特性。