Nonlinearity in regulating the metal to insulator transition of ReNiO3 towards low temperature range

Among the existing material family of the correlated oxides, the rare earth nickelates (ReNiO₃) exhibit broadly adjustable metal to insulator transition (MIT) properties that enables correlated electronic applications, such as thermistors, thermochromics, and logical devices. Nevertheless, how to accurately control the critical temperature (T_MIT) of ReNiO₃ via the co-occupation of the rare-earth elements is yet worthy to be further explored. Herein, we demonstrate the non-linearity in adjusting the T_MIT of ReNiO₃ towards lower temperatures via introducing Pr co-occupation within ReNiO₃ (e.g., Pr_xNd_1-xNiO₃ and Pr_xSm_1-xNiO₃) as synthesized by KCl molten-salt assisted high oxygen pressure reaction approach. Although the T_MIT is effectively reduced via Pr substitution, it does not strictly follow a linear relationship, in particular, when there is large difference in the ionic radius of the co-occupation rare-earth elements. Furthermore, the most significant deviation in T_MIT from the expected linear relationship appears at an equal co-occupation ratio of the two different rare-earth elements, while the abruption in the variation of resistivity across T_MIT is also reduced. The present work highlights the importance to use adjacent rare-earth elements with co-occupation ratio away from 1:1 for achieving more linear adjustment in designing the metal to insulator transition properties for ReNiO₃.     

Electrical oscillation generation with current-induced resistivity switching in VO2 micro-channel devices

We report large amplitude modulation waveforms as large as ~ 10 V using vanadium dioxide micro-channel devices operating under current-controlled conditions. The self-sustained electrical oscillations were generated by controlling the applied current in the negative differential resistance region of the investigated devices. An appropriate value of internal capacitance was achieved as parasitic capacitance in the device structure to stabilize the electrical oscillations. This eliminates the need of an external pulsed source or any external passive component connected to the micro-channel devices. Amplitude and frequency of the oscillation were tuned by illuminating the device micro-channel with an external laser. An equivalent circuit model was developed to simulate the waveforms. A good agreement between experiment and simulation was verified.     

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.     

Assessing the width of Gaussian density of states in organic semiconductors

The Density of States (DOS) is an ingredient of critical importance for the accurate physical understanding of the optoelectronic properties of organic semiconductors. The disordered nature of this class of materials, though, renders the task of determining the DOS far from trivial. Its extraction from experimental measurements is often performed by driving the semiconductor out of thermal equilibrium and therefore requires making assumptions on the charge transport properties of the material under examination. This entanglement of DOS and charge transport models is unfavorable since transport mechanisms in organic semiconductors are themselves still subject of debate. To avoid this, we propose an alternative approach which is based on populating and probing the DOS by means of capacitive coupling in Metal Insulator Semiconductors (MIS) structures while keeping the semiconductor in thermal equilibrium. Assuming a Gaussian shape, we extract the DOS width by numerical fitting of experimental Capacitance–Voltage curves, exploiting the fact that the DOS width affects the spatial distribution of accumulated charge carriers which in turn concurs to define the MIS capacitance. The proposed approach is successfully tested on two benchmark semiconducting polymers, one of n-type and one of p-type and it is validated by verifying the robustness of the extraction procedure with respect to varying the insulator electrical permittivity. Finally, as an example of the usefulness and effectiveness of our approach, we study the static characteristics of thin film transistors based on the aforementioned polymers in the framework of the Extended Gaussian Disorder transport model. Thanks to the extracted DOS widths, the functional dependence of current on the gate voltage is nicely predicted and physical insight on transistor operation is achieved.     

Structural properties and sensing performance of CeTiO3 ceramic films as a solid-state pH sensor

In this paper, we have studied the impact of postannealing treatment on the structural properties and sensing characteristics of CeTiO₃ ceramic membranes deposited on Si substrate by sputtering for solid-state electrolyte-insulator-semiconductor (EIS) pH sensors. X-ray photoelectron spectroscopy, Auger electron spectroscopy, X-ray diffraction, and atomic force microscopy were used to study the chemical compositions, elemental depth profiles, film structures, and surface morphologies of CeTiO₃ ceramic membranes treated at three rapid thermal annealing (RTA) temperatures of 700, 800 and 900?°C. The sensing performance of the CeTiO₃ ceramic membranes annealed at three different RTA temperatures is strongly correlated to their structural properties. The CeTiO₃ EIS device after RTA at 800?°C exhibited the best sensing characteristics (pH sensitivity, hysteresis voltage and drift rate) among these RTA temperatures. We attribute this behavior to the optimal RTA temperature enhancing the Ce³⁺/Ce⁴⁺ ratio of CeTiO₃ ceramic membrane, reducing an interfacial layer at the CeTiO₃-Si interface, and increasing its surface roughness.     

改进的Fast-CNN模型在绝缘子特征检测中的研究

针对目前电网巡检系统中采用红外成像检测绝缘子串特征的效果受环境影响，提出联合显著区域和Fast-CNN网络（改进后的卷积神经网络）用于绝缘子特征检测研究。显著区域检测首先采用超像素描述各区域位置的整体信息；然后基于各超像素的特征协方差信息计算各超像素的显著度得到大致显著区域；再通过区域模块化和局部复杂度对比提取显著特征，同时将2种方法提取的显著特征分别输入改进后的Fast-CNN网络进行显著区域检测，同时引入动态自适应池化模型和余弦窗处理中间层，最后通过多次迭代训练得到绝缘子特征，避免CNN模型耗时的全图搜索。将本文算法在红外图像库中进行测试，本文算法的F-Measure以及平均误差MAE均优于当前流行算法。     

电子束诱导沉积钴微米线及其铁磁性

通过电子束诱导沉积的方法制备了钴(Co)微米线,并利用扫描电子显微镜(SEM)、原子力/磁力显微镜(AFM/MFM)以及物性测量系统(PPMS)等手段对Co微米线的沉积尺寸、微结构、铁磁性和电学性质进行了测试和分析。研究结果表明:Co微米线轮廓清晰、均匀性好。在不同的沉积条件下,微米线的实际长度与设定长度基本一致;实际宽度数据呈类梯形分布,半高宽是设定值的2~10倍;实际厚度低于设定厚度的60%。沉积电流对Co微米线的铁磁特性有重要影响。当沉积电流大于0.5 nA时,样品呈现出良好的铁磁特性。另外,电学性能测试结果显示Co微米线呈现绝缘特性。成功制备了室温铁磁绝缘Co微米线,这将有助于深入开展微纳尺度的结构与器件的研究和应用。     

浅谈电气化铁路分段绝缘器的安装

探讨了电气化铁路牵引供电系统接触网施工中安装分段绝缘器存在的问题,并提出了解决措施。     

浅谈电气化铁路分段绝缘器的安装

论述了电气化铁路牵引供电系统接触网施工中安装分段绝缘器存在的问题，并提出了相应的解决措施。     

数控三工位大型高压瓷套修坯机组的研制

研制出一种适用于等静压干法加工工艺的新型结构数控三工位大型高压瓷套修坯机组。机组的三台加工设备采用星形排列,上坯机设在机组中心,实现各个加工机床间坯件的换位和定位。电气控制系统采用编程控制器(PLC),实现手动和自动控制。实践证明,该机组的噪音为71dB,粉尘泄漏量为33.1m g/m 2,实际产量为每天两班生产11根坯件,达到了设计要求。