Structure and tensile／wear properties of microarc oxidation ceramic coatings on aluminium alloy

Thick and hard ceramic coatings were prepared on the Al-Cu-Mg alloy by microarc oxidation in alkali-silicate electrolytic solution. The thickness and microhardness of the oxide coatings were measured. The influence of current density on the growth rate of the coating was examined. The rnicrostructure and phase composition of the coatings were investigated by means of scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. Moreover, the tensile strength of the AI alloy before and after microarc oxidation treatment were tested, and the fractography and morphology of the oxide coatings were observed using scanning electron microscope. It is found that the current density considerably influences the growth rate of the microarc oxidation coatings. The oxide coating is mainly composed of α-Al2 O3 and γ-Al2O3, while high content of Si is observed in the superficial layer of the coating. The cross-section microhardness of 120μm thick coating reaches the maximum at distance of 35μm from the substrate/coating interface. The tensile strength and elongation of the coated AI alloy significantly decrease with increasing coating thickness. The rnicroarc oxidation coatings greatly improve the wear resistance of AI alloy, but have high friction coefficient which changes in the range of 0.7-0.8. Under grease lubricating, friction coefficient is only 0. 15 and wear loss is less than 1/10 of the loss under dry friction.     

竖直式HVPE反应系统的理论模拟与GaN厚膜生长

根据流体动力学模型,研究了反应气体在反应室内的浓度分布,以及反应室的温场分布.NH3浓度在衬底附近分布均匀,而GaCl浓度在衬底中心区域较大,周边较小.实验结果表明,外延层在中心区生长速率为260μm/h,周边为140/μm/h.X射线摇摆曲线半高宽为141".O杂质的引入,使得样品具有较强的黄光发射.     

InAIN薄膜MOCVD外延生长研究

为了研究不同压力和不同模板对InAlN薄膜外延生长的影响,分别选取以GaN为模板时生长压力为4.00、6.67和13.33 kPa,压力为4.00 kPa时模板为GaN和A1N这两组条件进行实验比较.研究发现,随着生长压力的增加,样品中In含量降低,样品的粗糙度则随压力的增加而增大;压力为4.00 kPa时,分别以摇摆曲线半高宽(FWHM)为86.97”的AIN和224.1”的GaN为模板,发现A1N模板上生长的InAIN样品(002)和(102)峰的FWHM值及表面粗糙度比上述GaN为模板生长的InAlN样品都要小很多.综合以上结果可初步得知:降低压力可以优化InAlN薄膜的表面形貌,增加In组分含量;采用高质量的AIN作模板能生长出晶体质量和表面形貌都比较好的InAlN薄膜.     

Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543μA,and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of 2000 V increases from 60%to 90%.     

插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应

在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。     

热氧化GaN制备的β-Ga2O3基日盲紫外探测器

利用热氧化法将电化学腐蚀制备的多孔GaN薄膜氧化成三维孔隙状β-Ga₂O₃薄膜,分析了多孔GaN薄膜与传统GaN薄膜在氧化机理上的区别,并通过材料表征证明了多孔GaN薄膜能够实现更快的氧化速率。随后将氧化生成的β-Ga₂O₃薄膜制备成MSM型β-Ga₂O₃基日盲紫外探测器,在260nm光照及10V偏压下,器件的响应度为16.9A/W,外量子效率为8×10³%,探测率D*达到了2.03×10¹⁴Jones,能够满足弱光信号的探测需求。此外,器件的瞬态响应具有非常好的稳定性,相应的上升时间为0.75s/4.56s,下降时间为0.37s/3.48s。     

使用溅射AlN成核层实现大规模生产深紫外LED

高质量AlN薄膜对制造高性能深紫外器件非常重要,但是目前还很难使用大型工业MOCVD生长出高质量的AlN薄膜.采用磁控溅射制备了不同厚度的用作成核层的AlN薄膜,使用大型工业MOCVD直接在成核层上高温生长AlN外延层,研究了不同成核层对AlN外延层质量的影响.通过扫描电子显微镜和原子力显微镜对成核层AlN薄膜的表面形貌进行表征;使用高分辨X射线衍射仪对AlN外延层晶体质量进行表征,结果表明:在溅射成核层上生长的AlN外延层的晶体质量有显著提高.使用大型工业MOCVD在蓝宝石衬底上成功制备出中心波长为282 nm的可商用深紫外LED,在注入电流为20 mA时,单颗深紫外LED芯片的光输出功率达到了1.65 mW,对应的外量子效率为1.87%,饱和光输出功率达到4.31 mW.     

LY12铝合金微弧氧化陶瓷层的结构和性能

分析了LY12铝合金微弧氧化陶瓷膜的形貌、组成和结构,研究了氧化膜的硬度、与基体的结合强度以及在油润滑和干摩擦这两种条件下的摩擦学行为.结果表明,铝合金微弧氧化膜可分为疏松层和致密层,疏松层由α-Al2O3、γ-Al2O3以及Al-Si-O相组成,致密层由α-Al2O3和γ-Al2O3组成,致密层中α-Al2O3的含量远远高于疏松层.从表层到基体,微弧氧化膜的断面显微硬度先增大后减 小.微弧氧化膜与铝合金基体结合紧密.随着膜厚度的增加,氧化膜的临界载荷线性增加.氧化膜具有优良的抗磨性能,油润滑条件下的摩擦系数仅为干摩擦下的1/10.     

微机监控、变频调速是供暖锅炉节能的有效途径

文章重点探讨了供暖锅炉节能运行的正确途径及相应的监控系统。该系统采用51系列单片微机和高性能马达变频器结合的设计方案,对锅炉运行中的温度、压力、流量、煤耗、锅炉出力、热效率等十二项参数进行实时检测和巡回显示,根据供暖质量要求,自动调节鼓风、引风及炉排速度,并以合理的风煤配比,实现对锅炉燃烧状态的最佳过程控制。