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Single image super resolution (SISR) is an important research content in the
field of computer vision and image processing. With the rapid development of deep
neural networks, different image super-resolution models have emerged. Compared to
some traditional SISR methods, deep learning-based methods can complete the superresolution tasks through a single image. In addition, compared with the SISR methods
using traditional convolutional neural networks, SISR based on generative adversarial
networks (GAN) has achieved the most advanced visual performance. In this review, we
first explore the challenges faced by SISR and introduce some common datasets and
evaluation metrics. Then, we review the improved network structures and loss functions
of GAN-based perceptual SISR. Subsequently, the advantages and disadvantages of
different networks are analyzed by multiple comparative experiments. Finally, we
summarize the paper and look forward to the future development trends of GAN-based
perceptual SISR. 相似文献
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Baldridge K.K. Greenberg J.P. Sudholt W. Mock S. Altintas I. Amoreira C. Potier Y. Birnbaum A. Bhatia K. Taufer M. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2005,93(3):510-521
Evolving technologies, as exemplified by computational grids and Web services, have made it possible to solve new scientific problems that would not have been feasible previously. In order to make such advances available to the community in general and to be able to solve new problems, not necessarily from the same discipline, it is imperative to build tools that provide a common user interface in order that application programmers and users do not have to be concerned with particulars of Web services and their underlying code, computational platforms, or with data file formats. We will describe our efforts in creating a computational chemistry environment that encompasses a general scientific workflow environment, a domain specific example for quantum chemistry, our ongoing design of a workflow user interface, and our efforts at database integration. 相似文献
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In composite production, the shortest route is via an in situ composite in which a melt dissociates simultaneously into two rather different solid phases. The monotectic alloys can be
included in this group. The present work was aimed at extending our recent squeeze casting experience on the Zn-Bi monotectic
alloy in order to increase its cast quality and mechanical properties. A squeeze casting unit was built, and its die and punch
were machined. The molten monotectic alloy was squeezed in this unit under pressures up to 120 MPa in its freezing range until
it solidified completely. It was found that an increase in squeeze casting pressure provided increases in density, tensile
strength, and Vickers hardness, which resulted in decreases in chip length and electrical resistivity. Before the squeeze
casting practice, the freezing characteristics of this monotectic were estimated using basic solidification principles. 相似文献
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RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性 总被引:4,自引:4,他引:0
用射频分子束外延技术研制出了室温迁移率为10 35 cm2 /(V·s) ,二维电子气浓度为1.0×10 1 3cm- 2 ,77K迁移率为2 6 5 3cm2 /(V·s) ,二维电子气浓度为9.6×10 1 2 cm- 2 的Al Ga N/Ga N高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm )的室温非本征跨导为186 m S/m m,最大漏极饱和电流密度为92 5 m A/m m,特征频率为18.8GHz. 相似文献
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用射频分子束外延技术研制出了室温迁移率为1035cm2/(V·s),二维电子气浓度为1.0×1013cm-2,77K迁移率为2653cm2/(V·s),二维电子气浓度为9.6×1012cm-2的AlGaN/GaN高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm)的室温非本征跨导为186mS/mm,最大漏极饱和电流密度为925mA/mm,特征频率为18.8GHz. 相似文献
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In this paper we present a Multi-Element generalized Polynomial Chaos (ME-gPC) method to deal with stochastic inputs with arbitrary probability measures. Based on the decomposition of the random space of the stochastic inputs, we construct numerically a set of orthogonal polynomials with respect to a conditional probability density function (PDF) in each element and subsequently implement generalized Polynomial Chaos (gPC) locally. Numerical examples show that ME-gPC exhibits both p- and h-convergence for arbitrary probability measures 相似文献
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A dual-series-based solution is obtained for the scattering of an H-polarized plane wave from a slitted infinite circular cylinder coated with absorbing material from inside or outside. For both cases, numerical results are presented for the radar cross section and comparisons are given for two different realistic absorbing materials. The radar cross-section dependencies are also given for the aspect angle of the scatterer and the thickness of the absorbing layer 相似文献