甚高频对大气压Ar/SiH4/H2混合等离子体粒子密度分布影响的数值模拟（英文）

To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content,we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure using a two-dimensional fluid model.The model takes into account the primary processes of excitation and ionization,sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges,so this model can adequately describe the discharge plasma.The effects of very high frequency(VHF)excitation on the electron density in such discharges are analyzed.The simulation results show that the electron density does not linearly vary with the excitation frequency within from 90150 MHz.he maximum value occurs at an appropriate excitation frequency i.e.the transition frequency.Increasof the excitation frequency would effectively increase the electron density before the transition frequency,but decreases the density afterwards.is.Moreover,the densities of involved particle species,including H2+,H,Ar*,Ar+,SiH3+,SiH3,SiH3,SiH2are closely interrelated.     

几种常用自硬砂工艺技术与生产成本的比较

从几种常用自硬砂制芯造型工艺技术现状、工艺成本的角度出发，将几种常用自硬砂（即呋喃树脂自硬砂、碱酚醛树脂自硬砂、Pep-set法自硬砂、酯硬化水玻璃自硬砂），进行对比分析，列出了几种常用自硬砂在铸造质量、工艺技术、工艺成本、劳动条件以及环境保护方面的优势与劣势。同时重点介绍了酯硬化水玻璃自硬砂的优点。     

Numerical Simulation of VHF Effects on Densities of Important Species for Silicon Film Deposition at Atmospheric Pressure

The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model.This model takes into account the primary processes excitation and ionization,sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges and therefore,can adequately represent the discharge plasma.We analyze the effects of very high frequency(VHF) on the densities of species(e,H,SiH3,SiH+3 and SiH2) in such discharges using the model.The simulation results show that the densities of SiH3,SiH+3,H,and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz.It is found that the deposition rate of μc-Si:H film depends on the concentration of SiH3,SiH+3,SiH2,and H in the plasma.The effects of VHF on the deposition rate and the amount of crystallized fraction for μc-Si:H film growth is also discussed in this paper.