Human DDX17 Unwinds Rift Valley Fever Virus Non-Coding RNAs

Rift Valley fever virus (RVFV) is a mosquito-transmitted virus from the Bunyaviridae family that causes high rates of mortality and morbidity in humans and ruminant animals. Previous studies indicated that DEAD-box helicase 17 (DDX17) restricts RVFV replication by recognizing two primary non-coding RNAs in the S-segment of the genome: the intergenic region (IGR) and 5′ non-coding region (NCR). However, we lack molecular insights into the direct binding of DDX17 with RVFV non-coding RNAs and information on the unwinding of both non-coding RNAs by DDX17. Therefore, we performed an extensive biophysical analysis of the DDX17 helicase domain (DDX17_135–555) and RVFV non-coding RNAs, IGR and 5’ NCR. The homogeneity studies using analytical ultracentrifugation indicated that DDX17_135–555, IGR, and 5’ NCR are pure. Next, we performed small-angle X-ray scattering (SAXS) experiments, which suggested that DDX17 and both RNAs are homogenous as well. SAXS analysis also demonstrated that DDX17 is globular to an extent, whereas the RNAs adopt an extended conformation in solution. Subsequently, microscale thermophoresis (MST) experiments were performed to investigate the direct binding of DDX17 to the non-coding RNAs. The MST experiments demonstrated that DDX17 binds with the IGR and 5’ NCR with a dissociation constant of 5.77 ± 0.15 µM and 9.85 ± 0.11 µM, respectively. As DDX17_135–555 is an RNA helicase, we next determined if it could unwind IGR and NCR. We developed a helicase assay using MST and fluorescently-labeled oligos, which suggested DDX17_135–555 can unwind both RNAs. Overall, our study provides direct evidence of DDX17_135–555 interacting with and unwinding RVFV non-coding regions.     

Pressureless synthesis of fully dense and crack-free SiOC bulk ceramics via photo-crosslinking and pyrolysis of a polysiloxane

This paper presents the pressureless preparation of fully dense and crack-free SiOC ceramics via direct photo-crosslinking and pyrolysis of a polysiloxane. Elemental analysis revealed the presence of high levels of carbon in the SiOC ceramics. Thus, the samples showed the highest content (78-86 mol%) of segregated “free” carbon reported so far. XRD investigations indicated that the materials prepared at 1100 °C were X-ray amorphous, whereas the sample prepared at 1400 °C contained a turbostratic graphite-like phase and silicon carbide as crystalline phases, as additionally confirmed by TEM and Raman spectroscopy. Vickers hardness was measured to be 5.5-8.6 GPa. The dc resistivity of the prepared material at 1100 °C was 0.35 Ω m, whereas the ceramic pyrolyzed at 1400 °C showed a value of 0.14 Ω m; both values are much lower than those of other known SiOC materials. This latter feature was attributed to the presence of a percolating carbon network in the ceramic.     

Oxidation Kinetics of an Amorphous Silicon Carbonitride Ceramic

The oxidation kinetics of amorphous silicon carbonitride (SiCN) was measured at 1350°C in ambient air. Two types of specimens were studied: one in the form of thin disks, the other as a powder. Both specimens contained open nanoscale porosity. The disk specimens exhibited weight gain that saturated exponentially with time, analogous to the oxidation behavior of reaction-bonded Si₃N₄. The saturation value of the weight gain increased linearly with specimen volume, suggesting the nanoscale pore surfaces oxidized uniformly throughout the specimen. This interpretation was confirmed by high-resolution electron microscopy and secondary ion mass spectroscopy. Experiments with the powders (having a particle size much larger than the scale of the nanopores) were also consistent with measurements of the disks. However, the powder specimens, having a high surface-to-volume ratio, continued to show measurable weight gain due to oxidation of the exterior surface. The wide range of values for the surface-to-volume ratio, which included all specimens, permitted a separation of the rate of oxidation of the free surface and the oxidation of the internal surfaces of the nanopores. Surface oxidation data were used to obtain the rate constant for parabolic growth of the oxidation scale. The values for the rate constant obtained for SiCN lay at the lower end of the spectrum of oxidation rates reported in the literature for several Si₃N₄ and SiC materials. Convergence in the behavior of SiCN and CVD-SiC is ascribed to the purity of both materials. Conversely, it is proposed that the high rates of oxidation of sintered polycrystalline silicon carbides and nitrides, as well as the high degree of variability of these rates, might be related to the impurities introduced by the sintering aids.     

Reoptimization of the Shortest Common Superstring Problem

A reoptimization problem describes the following scenario: given an instance of an optimization problem together with an optimal solution for it, we want to find a good solution for a locally modified instance.     

Kinetics and dynamics of thermally-induced shape-memory behavior of crosslinked short-chain branched polyethylenes

Systematic investigation of the relation between shape-memory (SM) behavior and characteristics of the covalent network and the crystalline domains of a crosslinked polymer, i.e., crosslink density and crystallinity, respectively, was performed using homogeneous ethylene-1-octenecopolymers (EOC) as model polymers. The EOCs have been crosslinked by 2,5-dimethyl-2,5-di(t-butylperoxy)hexane (DHBP) decomposition. Two EOCs with a degree of branching of 30 and 60 hexyl side chains per 1000C atoms with each four different crosslink densities were employed. The investigated EOCs differ significantly in crystallinity, melting temperature (T_m) and crosslink density. The crosslinked EOC undergone the programming at a strain of 100% showed high strain fixity ratio (R_f) and strain recovery ratio (R_r). The R_f and R_r values increase with increasing crystallinity and crosslink density, respectively, and decline only slightly in a subsequent SM cycle. The switching temperature (T_sw) is strictly related to T_m and decreases with increasing degree of branching as well as crosslink density in the temperature range of 101–63 °C. T_sw remains nearly unchanged when the programming temperature (T_pr) or the load during SM recovery is varied. The kinetics of SM recovery as characterized by the temperature dependence of recovery rate is controlled by the melting behavior. The specific work generated by the programmed specimen during thermally-induced recovery under constant load, gains with increasing crosslink density, and is proposed as dynamical characteristic of practical relevance. The opportunity of tailoring T_sw by variation of the degree of branching and crosslink density makes such polymers attractive candidates for applications requiring T_sw temperatures in the range from 60 to 100 °C.