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Prashant Thapliyal Alok S. Kandari Vijendra Lingwal N.S. Panwar G. Mohan Rao 《Ceramics International》2021,47(9):12066-12071
(Ta2O5)1-x- (TiO2)x (TTOx) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta2O5 structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTOx/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTOx films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10?5 to 10?8 A cm?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10?8 A cm?2, at the electric field of 3.5 × 105 V cm?1, show preferred potential as a dielectric for high-density silicon memory devices. 相似文献
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Wireless Personal Communications - The paper reports the performance of an energy harvesting cognitive radio network under primary user emulation (PUE) attack. A secondary user (SU) can harvest... 相似文献
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Photonic Network Communications - Performance of underwater wireless optical communication (UWOC) with different vertical water channel conditions is experimentally analyzed. Experiment has been... 相似文献
5.
This article presents a design methodology for linearizing GaN HEMT amplifiers based on splitting a large FET into multiple parallel FETs with same total gate periphery and by biasing them individually. By varying the biases, the magnitude and the phase of the IMD3 components at the output of FET changes. A detailed simulation methodology using commercial microwave CAD software is presented. Simulation results show that by biasing one device in Class AB and other(s) in deep Class AB mode, IMD3 components of parallel FETs can be made out of phase to each other leading to cancellation and improvement in linearity. Three prototype circuits were simulated using (a) a single 5 mm FET (1 × 5 mm), (b) two parallel 2.5 mm FETs (2 × 2.5 mm), and (c) four parallel 1.25 mm FETs (4 × 1.25 mm), for a total gate periphery of 5 mm, over the frequency range of 0.8 to 1.0 GHz. IMD3 improvement up to 20 dBc was achieved with the 4 × 1.25 mm circuit when the FET biases were optimized. Measurement results show improvement in linearity up to 20 dBc for 4 × 1.25 mm circuit. The proposed method improves linearity without a substantial penalty on the power consumption and is straightforward to implement. 相似文献
6.
Pradum Pundlikrao Ige Rohit Ravindra Badgujar Pankaj Padmakar Nerkar Hitendra Shaligram Mahajan Raju Onkar Sonawane Sanjay Javarilal Surana 《Particulate Science and Technology》2018,36(5):583-591
Drug which shows extensive first pass effect is difficult task that, needs to be solved by formulators in the pharmaceutical science. The low oral bioavailability (49%) of flutamide may be due to poor wettability, low aqueous solubility and extensive first pass effect. The aim of present investigation was to prepare flutamide loaded microspheres and incorporate it into suppositories for rectal delivery to avoid first pass effect and enhance residence time. Flutamide loaded mucoadhesive microspheres of Ocimum Basilicum mucilage (OBM) were prepared using spray drying and characterized by percent production yield, encapsulation efficiency, particle size, zeta potential, polydispersity index, DSC, SEM, XRPD, in vitro drug release and stability studies. Moreover, ex vivo mucoadhesion was investigated using falling liquid film technique to determine the adhesion of microspheres to sheep rectal mucosa. The microspheres had nearly spherical shape and size about 2.53?μm. The encapsulation efficiency and mucoadhesion of optimized formulation MBF10 were found to be 69.6?±?2.3% and 89.01?±?2.18%, respectively. Percent CDR of optimized flutamide loaded mucoadhesive microspheres was found to be 88.7?±?1.3 at 7?h. In conclusion, OBM microparticles based suppository could be used to deliver drug through rectal delivery. 相似文献
7.
This article presents a metaheuristic approach, the binary whale optimization algorithm (BWOA), to solve complex, constrained, non-convex, binary-nature profit-based unit commitment (PBUC) optimization problems of a price-taking generation company (GenCo) in the electricity market. To simulate the binary-nature PBUC problem, the continuous, real-value whale position/location is mapped into binary search space through various transfer functions. This article introduces three variants of BWOA using tangential hyperbolic, inverse tangent (arctan) and sigmoidal transfer functions. The effectiveness of the BWOA approaches is examined in test systems with different market mechanisms, i.e. an energy-only market, and energy and reserve market participation with different reserve payment methods. The simulation results are presented, discussed and compared with other existing approaches. The convergence characteristics, solution quality and consistency of the results across different BWOA variants are discussed. The superiority and statistical significance of the proposed approaches with respect to existing approaches is also presented. 相似文献
8.
Kotteda V. M. Krushnarao Schiaffino Arturo Chattopadhyay Ashesh Shantha-Kumar Sanjay Kumar Vinod Bronson Arturo 《Metallurgical and Materials Transactions B》2019,50(4):1559-1565
Metallurgical and Materials Transactions B - The effect of the surface tension–viscosity dissipation driving liquid Ti flow into a B4C packed bed was analyzed at 1941 K and 2573 K. The model... 相似文献
9.
Semiconductors - In this work, drain current ID for 5-nm gate length with dual-material (DM) double-surrounding gate (DSG) inversion mode (IM) and junctionless (JL) silicon nanotube (SiNT) MOSFET... 相似文献
10.
Palit Piyas Kushwaha Sanjay Kumar Mathur Jitendra Chaturvadi Abhay Kumar 《Journal of Failure Analysis and Prevention》2019,19(3):752-760
Journal of Failure Analysis and Prevention - Wire rope is an important part of any crane. Failure of wire rope may lead to major loss in terms of life and cost. Wire rope failures are attributed by... 相似文献