Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources

In this paper,A12O3 thin films are deposited on a hydrogen-terminated Si substrate by using two home-built electron cyclotron resonance (ECR) and magnetic field enhanced radio frequency plasma-assisted atomic layer deposition (PA-ALD) devices with Al(CH3)3 (trimethylaluminum,TMA) and oxygen plasma used as precursor and oxidant,respectively.The thickness,chemical composition,surface morphology and group reactions are characterized by in situ spectroscopic ellipsometer,x-ray photoelectric spectroscopy,atomic force microscopy,scanning electron microscopy,a high-resolution transmission electron microscope and in situ mass spectrometry (MS),respectively.We obtain that both ECR PA-ALD and the magnetic field enhanced PA-ALD can deposit thin films with high density,high purity,and uniformity at a high deposition rate.MS analysis reveals that the A12O3 deposition reactions are not simple reactions between TMA and oxygen plasma to produce alumina,water and carbon dioxide.In fact,acetylene,carbon monoxide and some other by-products also appear in the exhaustion gas.In addition,the presence of bias voltage has a certain effect on the deposition rate and surface morphology of films,which may be attributed to the presence of bias voltage controlling the plasma energy and density.We conclude that both plasma sources have a different deposition mechanism,which is much more complicated than expected.     

聚乙烯薄膜表面沉积纳米SiO_x涂层的阻隔性能

为了提高药品包装用聚乙烯(PE)薄膜的阻隔性能,利用射频等离子体增强化学气相沉积技术,以氧气(O2)和六甲基二硅氧烷(HMDSO)作为氧化性气体和硅源单体,在PE薄膜表面沉积一层纳米厚度的柔性SiOx涂层。采用傅里叶变换红外吸收光谱、原子力显微镜和气体透过率测试仪对SiOx涂层的化学结构成分、表面微观形貌和气体阻隔性能进行表征。结果表明:SiOx涂层的化学结构和表面形貌对其阻隔性能有显著的影响。沉积工艺参数对SiOx涂层的阻隔性能起到了至关重要的作用。经过参数优化后制备的SiOx涂层可以有效地提高PE薄膜对氧气的阻隔性能,当射频功率为50 W,氧气和六甲基二硅氧烷的比例为2∶1,沉积气压为20Pa时制备的SiOx涂层的透氧值可从原膜的3 000mL/(m2·d)降低到30mL/(m2·d),对氧气的阻隔率可以提高100倍。     

脉冲负偏压对沉积类金刚石薄膜结构和摩擦性能的影响

在不同的基台脉冲负偏压下,利用微波-ECR等离子体化学气相沉积技术在单晶硅表面制备了类金刚石薄膜,利用傅立叶变换红外吸收光谱和原子力显微镜对薄膜的结构和形貌进行了表征,最后对薄膜的摩擦系数进行了测试.结果表明:制备的薄膜具有典型的含H类金刚石结构特征,薄膜致密均匀,表面粗糙度很小.随着负偏压的增大,红外光谱中2800-3000 cm-1波段的C-H伸缩振动吸收峰的强度先升高后降低,并在负偏压为200 V时达到最大;薄膜的摩擦系数而是先降低再升高,在负偏压为200 V时达到最小.     

原子层沉积铝薄膜的研究

为了对原子层沉积金属薄膜进行研究,以三甲基铝为前驱体、氢气为还原剂,在微波电子回旋共振等离子体辅助原子层沉积装置中进行了铝薄膜的沉积。通过实验确定了三甲基铝和和H2进行饱和反应的参数。采用X射线衍射仪、原子力显微镜及四探针电阻仪对薄膜的结构和性能进行了测试。结果表明:用等离子体辅助原子层沉积技术可以成功制备金属铝薄膜,沉积速率和表面形貌受基底温度的影响,薄膜在H2氛围下退火处理后晶体结构可以得到有效改善,铝薄膜的表面电阻也有明显降低。     

等离子体增强原子层沉积技术制备铜薄膜

集成电路的高速发展为铜互连提出诸多要求,其中,如何低温条件(≤150℃)下在大深宽比的通孔或沟槽中沉积保形性好、纯度高、导电性好的铜籽晶层是亟需解决的问题。本文利用等离子体增强原子层沉积技术,以脒基铜为铜前驱体,以氢等离子体为还原物质,在较低的沉积温度(100℃)下,沉积了纯度高、导电性能优良的铜薄膜。在10∶1的硅基沟槽中,表面与沟槽底部厚度均匀(~80 nm)。考察了放电输入功率对薄膜形貌的影响并利用时间分辨发射光谱技术对氢等离子体进行在线诊断。本论文研究表明铜脒基前驱体用于低温等离子体辅助原子层沉积工艺,可有效地解决铜薄膜沉积过程中铜粒子的团聚问题,并为其它类脒基前驱体进行金属薄膜的沉积提供借鉴。     

浅谈建设单位工程结算资料的管理

结算资料是工程结算的支撑材料,建设单位在工程建设中要加强结算资料完整性、规范性、真实性、同步性的管理。     

RSV乙烷回收控制CO_2冻堵工艺改进

为提高RSV流程对原料气CO_2摩尔分数的适应性,应用重烃对CO_2的吸收原理提出部分原料气过冷乙烷回收工艺(recycle split-vapor and feed,RSVF),并对提出的RSVF流程进行了改进效果、原料气CO_2适应性及流程特性分析。分析结果表明,与RSV流程相比,RSVF流程对原料气CO_2摩尔分数适应性更强,相同条件下提高CO_2冻堵裕量1. 5～1. 8℃,节省主体装置总压缩功0～7. 56%;当原料气CO_2摩尔分数达2. 5%时,对不同气质RSVF流程仍能达到90%以上的乙烷回收率。此外,RSVF流程过冷原料气的量一般控制在原料气总量的10%～20%;低温分离器气相过冷量控制在低温分离器气相总量的1%～10%;低温分离器液相过冷量需根据气质条件及原料气CO_2摩尔分数确定。     

Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) device with Al(CH3)3 (trimethylaluminum; TMA) and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was introduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction (XRD), an X-ray photoelectric spectroscope (XPS), a scanning electron microscope (SEM), an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between the Al2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can grow Al2O3 films with an excellent quality at a high growth rate at ambient temperature.     

有机玻璃基材表面电子束蒸镀铬-铝-二氧化硅薄膜及其性能研究

采用电子束蒸镀的方法,以有机玻璃为基材,在其表面蒸镀铬过渡层,再蒸镀铝,最后蒸镀保护层二氧化硅.实验结果表明:增加铬过渡层的样品,铝膜结合的非常牢固,附着力得到很大的提高.和未蒸镀二氧化硅保护层的样品进行耐腐蚀性测试对比,发现二氧化硅薄膜具有很好的保护性,铝膜在10%的碱性溶液中完好无损;而没镀二氧化硅保护层的样品,铝膜很快溶解.试验结果表明,采用电子束蒸发技术,在使用合适的工艺参数下,可以在有机玻璃表面制备附着力好、耐腐蚀的高反射铝膜.