排序方式: 共有21条查询结果,搜索用时 218 毫秒
1.
2.
金属-有机框架(MOF)衍生的过渡金属硒化物和多孔碳纳米复合材料具有巨大的储能优势,是应用于电化学储能的优良电极材料。采用共沉淀法制备CoFe类普鲁士蓝(CoFe-PBA)纳米立方,并通过静电组装在CoFe-PBA上包覆聚吡咯(PPy)得到CoFe-PBA@PPy;通过在400℃氮气中退火并硒化成功制备了氮掺杂的碳(NC)包覆(CoFe)Se2的(CoFe)Se2@NC纳米复合材料,并对其结构和形貌进行了表征。以(CoFe)Se2@NC为电极制备了超级电容器,测试了其电化学性能,结果表明,在电流密度1 A/g时超级电容器的比电容达到1047.9 F/g,在电流密度5 A/g下1000次循环后具有良好的循环稳定性和96.55%的比电容保持率。由于其性能优越、无毒、成本低和易于制备,未来(CoFe)Se2@NC纳米复合材料在超级电容器中具有非常大的应用潜力。 相似文献
3.
4.
HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy. 相似文献
5.
Amorphous Er2O3 films have been fabricated on p-type Si(001) substrates using radio frequency magnetron sputtering technique. Vacuum ultraviolet spectra were employed to investigate the samples. An optical gap of 6.17 eV for Er2O3 films was obtained from the ab-sorption coefficient spectra. A possible reason was put forward to explain the inconsistent results about the band gap of Er2O3 in literatures. Emission spectra exhibited a strong emission band at 494 nm with the incident ultraviolet light of 249 nm. The observed high density of emission bands of Er2O3 films in the visible wavelength indicated that Er2O3 films could be used in Si solar cells for increasing conversion efficiency. 相似文献
6.
用磁控溅射的方法在透明导电氧化物衬底上制备了CdS薄膜,制备时的衬底温度为30~200℃.X射线衍射测试结果表明在这一条件下制备的CdS薄膜是六角纤锌矿的多晶结构.扫描电子显微镜结果显示薄膜具有较好的晶体质量,这一结论也和拉曼光谱、紫外-可见吸收光谱、光致发光光谱的结果一致.拉曼光谱显示CdS薄膜内部的压应力随着制备温度的提高而增大. 相似文献
7.
8.
9.
10.