氧化钒薄膜的制备及电致开关特性的研究

采用反应溅射法,室温下,在Cu/Ti/SiO2/Si衬底上制备了氧化钒(VOx)薄膜,并对薄膜进行450℃、30min的真空退火处理.采用X-射线衍射(XRD)、原子力显微镜(AFM)对薄膜的结晶取向和表面形貌进行了表征,通过半导体参数分析仪对薄膜的电开关特性进行测试,并利用导电原子力显微镜(CAFM)对VOx薄膜的导...     

Effects of electrodes on resistance switching characteristics of TiO2 for flexible memory

Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.