低电压静电放电脉冲引起的界面损伤(英文)

It was found that the interface between gate oxide and substrate could be damaged by the low voltage electrostatic discharge pulse applied to the gate and source terminals of a MOSFET, even though the amplitude of the pulse was lower than the value causing catastrophic failure of the MOSFET.As the result of the damage, the interface trap density Nit increased-ashigh as one order. Compared to those traps far from the middle of the energy gap Ei, the traps near Ei was found to be increased more rapidly with the increasing of the pulse number. After the discharge pulse was over, the Nit value of the sample tended to decrease automatically. The time constant of the recovery is related to the pulse amplitude. The generation of the interface trap reduced the subthreshold transconductor of MOSFET. Discharge pulse can also induce a positive or negative charge in the gate oxide.     

掺氯氧化物的负偏压不稳定性研究

由MOS结构C-V特性的测量结果,说明掺氯氧化物负偏压不稳定性的情况,研究了掺氯浓度、应力大小和退火条件对负偏压不稳定性的影响,并对其机理进行了初步讨论。     

亚微米器件制造技术的发展动态

主要从光刻隔离,金属互连线三个方面讨论了亚微米器件所面临的挑战及其发展趋势。     

恒流应力下栅氧层与时间有关的击穿

本文用恒定电流应力加速寿命试验研究了栅氧层与时间有关的击穿及诱性电荷的产生规律。     

用测试图形和正方阵列机械四探针研究硅单晶电阻率的均匀性

本文讨论了平面四探针测试结构的设计及在测量硅单晶电阻率时应注意之处。测量结果与自制的正方阵列机械四探针及其他单位所用的直线阵列四探针的测量结果进行了比较;平面四探针测试结构宜于测量微区的电阻率,而带有数字显示正方阵列四探针则具有迅速直读的优点。用上述方法测量了一些硅单晶电阻率的均匀度。