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A kind of AlGaInP light emitting diode (LED) with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demonstrated theoretically and experimentally, and LEDs with the new structure have higher on-axis luminous intensity and larger saturation current than conventional LEDs and LEDs with ITO film only, which is caused by higher external quantum efficiency and also higher internal quantum efficiency. The new LEDs are especially suitable for working at large injected currents. 相似文献
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用传输矩阵法模拟计算了AlGaInP发光二极管(LED)不同表面结构的光学特性,用等离子体增强化学气相沉积(PECVD)或磁控溅射掺铟氧化锡(ITO)设备,在带有DBR结构的外延衬底上制备出具有不同表面层结构的LED.通过实验结果对比表明,表面生长λ/4n SiON加λ2n ITO增透膜结构复合增透膜的LED,器件光学性能提高最佳,在20 mA注入电流下,光强和光通量分别达到141.7 mcd和0.4733 lm.比同样结构的无增透膜LED轴向光强和光通量分别提高138%和91%. 相似文献
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