Dielectric Properties of Ultrathin CaF2 Ionic Crystals

Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF₂) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF₂ shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO₂, TiO₂, and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF₂ is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.     

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.     

An analytical approach for physical modeling of hot-carrier induced degradation

We develop an analytical model for hot-carrier degradation based on a rigorous physics-based TCAD model. The model employs an analytical approximation of the carrier acceleration integral (calculated with our TCAD approach) by a fitting formula. The essential features of hot-carrier degradation such as the interplay between single-and multiple-electron components of Si–H bond dissociation, mobility degradation during interface state build-up, as well as saturation of degradation at long stress times are inherited. As a result, the change of the linear drain current can be represented by the analytical expression over a wide range of stress conditions. The analytical model can be used to study the impact of device geometric parameters on hot-carrier degradation.     

On the temperature and voltage dependence of short-term negative bias temperature stress

Initial NBTI degradation is often explained by elastic hole trapping which also considerably distorts long-term measurements. In order to clarify this issue, short-term NBT stress measurements are performed using different temperatures, stress voltages, and oxide thicknesses. The data shows a clear temperature activation and a super-linear voltage dependence, thereby effectively ruling out elastic hole tunneling. Rather, our data supports an explanation based on a thermally activated hole capture mechanism.     

Room-temperature oxidation of reduced Cu/ZnO surfaces by lattice oxygen diffusion

At room temperature in the absence of gas-phase oxygen, reduced Cu on Cu/ZnO extracts oxygen from the ZnO lattice to reoxidize the surface. After 120 min at room temperature, diffusion of lattice oxygen reoxidizes reduced Cu/ZnO to 3% of its completely oxidized state. When gas-phase oxygen is present, it promotes the partial reoxidation of the reduced Cu/ZnO surface at room-temperature.     

Ion track-based electronic elements

In the past years, fundaments were set for a new type of electronics which is based on tracks in insulators formed by individual or multiple swift heavy ions. Due to the possibility of inserting any (semi)conducting material into these tracks, various active and passive electronic devices can be created. Among them are also transistor-like and Esaki diode-like elements. As many of these structures have sensing properties and the capability to undergo logic decisions, autonomous intelligent sensors appear to be a favourite field for future application. The use of liquid conductors may even expand the range of applicability towards medical implants.     

Fully coupled electrothermal mixed-mode device simulation of SiGeHBT circuits

It is well known that for the design and simulation of state-of-the-art circuits thermal effects like self-heating and coupling between individual devices must be taken into account. As compact models for modern or experimental devices are not readily available, a mixed-mode device simulator capable of thermal simulation is a valuable source of information, Considering self-heating and coupling effects results in a very complex equation system which can only be solved using sophisticated techniques. We present a fully coupled electrothermal mixed-mode simulation of an SiGe HBT circuit using the design of the μA709 operational amplifier. By investigating the influence of self-heating effects on the device behavior we demonstrate that the consideration of a simple power dissipation model instead of the lattice heat flow equation is a very good approximation of the more computation time consuming solution of the lattice heat flow equation     

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to standard devices with Silicon Dioxide or Oxynitride we study a hypothetical MISFET with a rather new crystalline dielectric-Calcium Fluoride. The real physical parameters of the \(\hbox {CaF}_{2}\) /Si tunnel barrier are used in our simulations. The obtained characteristics of the transistors with \(\hbox {CaF}_{2}\) are, in some details, better than those of the devices with traditional oxides. Being a step forward in the context of the industrial implementation of fluorite, this work opens the possibility of simulating the characteristics of different silicon-based devices with crystalline insulators.     

A review of hydrodynamic and energy-transport models for semiconductor device simulation

Since Stratton published his famous paper four decades ago, various transport models have been proposed which account for the average carrier energy or temperature in one way or another. The need for such transport models arose because the traditionally used drift-diffusion model cannot capture nonlocal effects which gained increasing importance in modern miniaturized semiconductor devices. In the derivation of these models from Boltzmann's transport equation, several assumptions have to be made in order to obtain a tractable equation set. Although these assumptions may differ significantly, the resulting final models show various similarities, which has frequently led to confusion. We give a detailed review on this subject, highlighting the differences and similarities between the models, and we shed some light on the critical issues associated with higher order transport models.     

Controlled Synthesis of Polyions of Heavy Main-Group Elements in Ionic Liquids

Ionic liquids (ILs) have been proven to be valuable reaction media for the synthesis of inorganic materials among an abundance of other applications in different fields of chemistry. Up to now, the syntheses have remained mostly “black boxes”; and researchers have to resort to trial-and-error in order to establish a new synthetic route to a specific compound. This review comprises decisive reaction parameters and techniques for the directed synthesis of polyions of heavy main-group elements (fourth period and beyond) in ILs. Several families of compounds are presented ranging from polyhalides over carbonyl complexes and selenidostannates to homo and heteropolycations.