TiO2和SiO2薄膜应力在线测量与研究

研究了离子能量在薄膜制备过程中对TiO2和SiO2薄膜应力的影响。用电子束蒸发的方法制备TiO2和SiO2薄膜,使用实验室自行设计制作的基于哈特曼传感器的薄膜应力仪在线监测TiO2和SiO2薄膜应力随膜厚的变化。结果表明,离子辅助沉积的TiO2薄膜张应力值要比传统工艺低40 MPa,并且随着离子能量的增加,薄膜逐渐由张应力变为压应力,薄膜的最大折射率为2.56;而离子辅助的溅射效应在制备SiO2薄膜时比较明显,传统工艺制备的SiO2薄膜表现为压应力,而用离子辅助的方法制备的SiO2薄膜表现为张应力,并且随着离子能量的增加,薄膜变得疏松,折射率逐渐降低。     

Analysis of europium doped luminescent barium thioaluminate

Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2+.In addition,the product of oxidation in the film was BaSO4 instead of BaAl2O4 and led to an emission peak at 415.2 nm in the PL spectra assigned to the f→f transition of Eu2+ in the BaSO4 host.