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1.
In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.  相似文献   
2.
Wireless Personal Communications - The performance of wireless communication network is important in emergency rescue operations while ensuring optimum usage of limited wireless resources. Due to...  相似文献   
3.
Dietary fibre (DF)-anthocyanin formulation was incorporated in bread to develop anthocyanin rich DF powder (ARDFP) fortified bread. Prior to incorporation of DF-anthocyanin formulation in bread preparation, the cytotoxicity of DF and anthocyanin extracts was assessed. The effect of incorporation of different level of ARDFP with moisture on bread quality characteristics such as specific volume, textural, colour, sensory properties and starch digestibility was studied. The results revealed that extracted DF and anthocyanin of culinary banana bracts were nontoxic towards peripheral blood mononuclear cell and cytotoxic towards HT29 cancerous cell line. Incorporation of 2% ARDFP with 68% moisture was rated as best with higher specific volume (5.50 cm3 g−1), improved textural properties (high springiness and cohesiveness), anthocyanin content (9.08 mg per 100 g), colour characteristics and sensory acceptability next to control. The in vitro digestibility study suggested increased incorporation of ARDFP in bread flour reduced the rate of starch digestibility (0.0035 min−1).  相似文献   
4.
Maity  Reshmi  Maity  N. P.  Guha  K.  Baishya  S. 《Microsystem Technologies》2021,27(2):515-523
Microsystem Technologies - This paper explained the dependency of collapse voltage on semiconductor device structural features (membrane diameter, membrane thickness and the vertical distance...  相似文献   
5.
Food Science and Biotechnology - The study aimed to investigate the effects of various pretreatment methods on sohiong fruit juice during the microfiltration process. The ultrasound,...  相似文献   
6.
In this article, a pocket doped hetero‐stacked L‐shaped gate silicon‐on‐insulator (SOI) tunnel FET (HS‐LG‐TFET) has been proposed and investigated. The band‐to‐band tunneling (BTBT) feature of LG‐TFET in a direction perpendicular to the channel facilitates higher ON current due to relatively larger tunneling area. The channel appears to be U‐shaped that is primarily distributed along the vertical direction, which increases the device scalability. Besides, the HS source architecture owns an upper source layer, which consists of larger bandgap material silicon and an underlying source layer, which consists of smaller bandgap material germanium. This underlying layer of smaller bandgap material in HS‐LG‐TFET provides enhanced ON current as well as steeper subthreshold swing behavior. The electrical noise behavior of the proposed structure is addressed to test its viability. Furthermore, a complete radio frequency (RF) characterization, including transconductance, capacitances, cutoff frequency, gain bandwidth product, maximum oscillation frequency, transit time, and minimum noise figure of the proposed device are analyzed to examine its analog applicability. Moreover, for checking the reliability issues associated with temperature, the temperature dependence on transfer and RF characteristics are also explored and presented. Further, the non‐quasi‐static equivalent circuit of the proposed structure is presented to analyze its behavior in the high frequency range.  相似文献   
7.
Saha  Rajesh  Bhowmick  Brinda  Baishya  Srimanta 《SILICON》2019,11(1):209-219
Silicon - This paper proposes device geometry of Fin-Field-Effect-Transistor (FinFET) with a step-fin. The source region of the proposed device consists of Si1−xGexand the effects of Ge-mole...  相似文献   
8.
ZnS-PVA nanocomposite thin films are grown by chemical bath deposition (CBD) method by varying the concentration of zinc source. Formation of nanocrystalline hexagonal ZnS is confirmed by X-ray diffraction. Hexagonal form is predominant at some lower concentration. The morphological properties of the films are determined by transmission electron microscope (TEM). The particle size as given by TEM indicates increase in particle size. Bandgap measured from UV-Visible transmission spectra shows a decreasing trend with decrease of Zn source concentration. Photoluminescence (PL) measurement showed blue emission centred at 417 nm and that the intensity decreases with decrease in Zn source concentration.  相似文献   
9.
Roselle is a bast fiber, and its utilization as a textile fiber for the development of textile products is still scanty. A work has been attempted to develop yarn from Roselle. Fibers were extracted from Roselle bark by decortication and degummed in alkaline medium. The degumming process was optimized based on fiber yield and strength. The degummed fibers were then bleached by the hydrogen peroxide bleaching process. Degummed and bleached fibers were characterized by scanning electron microscope, Fourier transform infrared spectroscopy, and X-ray diffraction analysis. Degumming and bleaching results in enhancement of density, fineness, and brightness of Roselle fiber. A marginal decrease in tenacity of the Roselle fiber was observed after bleaching; however, the strength was not affected by degumming. Fibers were converted into fine yarn in the jute spinning system. The yarn properties inferred that the yarn possessed essential properties for the preparation of apparels and home furnishing.  相似文献   
10.
An analytical subthreshold surface potential model for short-channel pocket-implanted (double-halo) MOSFET is presented. The effect of the depletion layers around the source and drain junctions on channel depletion layer depth, which is very important for short-channel devices, is included. Using this surface potential, a drift-diffusion based analytical subthreshold drain current model for short-channel pocket-implanted MOSFETs is also proposed. A physically-based empirical modification of the channel conduction layer thickness that was originally proposed for relatively long-channel conventional device is made for such short-channel double-halo devices. Very good agreement for both the surface potential and drain current is observed between the model calculation and the prediction made by the 2-D numerical device simulation using Dessis.  相似文献   
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