Cu掺杂对有序Sr3YCo4-xCuxO10.5+δ多晶的结构与物理性能的影响

采用固相反应法制备了四方Sr3YCo4-xCuxO10.5+δ(x=0~1.0)多晶。用热重-差示扫描量热分析,X射线衍射研究了多晶的有序化相变及结构。在固溶范围内(x=0~0.4),观察到有序峰(103)和(215),说明四方Sr3YCo4-xCuxO10.5+δ多晶为超结构,这是由于合成时在1000℃以上发生了吸氧(δ)有序化相变；当x=0.6~1.0时,978℃时在晶界处形成了单斜杂相,破坏了Sr3YCo4-xCuxO10.5+δ多晶的有序。当x=0~0.4时,多晶呈半导体输运行为。随着Cu掺杂量的增加,Co4+提供的空穴载流子浓度增大,电阻率明显下降；由于Cu的固溶,自旋熵增加,载流子浓度和自旋熵的共同作用使x=0~0.2多晶的热电势不变,x=0.4的热电势降低。并且Cu掺杂导致的晶格畸变使Co3+离子由高自旋态转变为高/低自旋混合态,磁化强度和铁磁转变温度(Tc)降低,磁结构由G-型反铁磁转变为铁磁。在进行二次烧结后,300K时电阻率明显降低,热电势为一次烧结的2倍,可能是二次烧结使多晶的有序化程度增大,提高了铁磁有序排列。     

子集模拟中马尔可夫链蒙特卡洛抽样算法比较

文章着重研究子集模拟中马尔可夫链蒙特卡洛(MCMC)抽样算法的抽样效率与计算精度。首先，阐述可靠度子集模拟的基本原理与中间状态样本生成的各种MCMC抽样算法，在稳态马尔可夫链构造基础上提出延迟拒绝MMH(Modified Metropolis Hasting)算法，通过在MMH算法上增加备选样本的延迟拒绝步提高MMH算法的抽样效率；阐述基于随机游走与基于扩散方程MCMC方法中建议分布的差异，进一步对备选样本接受率为1的preconditioned Crank-Nicolson(pCN)算法和条件抽样(Conditional sampling, CS)算法开展研究，证明两种算法的等价性；推导有效样本量的计算方法，提出采用有效样本量与总样本量的比值定义MCMC方法的抽样效率。通过复杂目标分布的样本生成研究不同MCMC抽样算法建议分布及其参数对备选样本接受率与抽样效率的影响，最后通过计算实例研究子集模拟过程采用不同MCMC抽样算法得到失效概率的相对误差及其变异性，揭示不同MCMC抽样算法对失效概率计算精度的影响。研究表明：不同MCMC抽样算法生成备选样本的接受率及其自相关性受建议分布及其参数影响较大，对于复杂的目标分布，pCN算法和CS算法的抽样效率较高，延迟拒绝MMH算法次之；采用CS算法和延迟拒绝MMH算法进行子集模拟得到的失效概率精度较高且变异性较低；增加子集模拟中间状态样本量可以提高失效概率计算精度并降低其变异性。     

Adaptation to Endoplasmic Reticulum Stress Enhances Resistance of Oral Cancer Cells to Cisplatin by Up-Regulating Polymerase η and Increasing DNA Repair Efficiency

Endoplasmic reticulum (ER) stress response is an adaptive program to cope with cellular stress that disturbs the function and homeostasis of ER, which commonly occurs during cancer progression to late stage. Late-stage cancers, mostly requiring chemotherapy, often develop treatment resistance. Chemoresistance has been linked to ER stress response; however, most of the evidence has come from studies that correlate the expression of stress markers with poor prognosis or demonstrate proapoptosis by the knockdown of stress-responsive genes. Since ER stress in cancers usually persists and is essentially not induced by genetic manipulations, we used low doses of ER stress inducers at levels that allowed cell adaptation to occur in order to investigate the effect of stress response on chemoresistance. We found that prolonged tolerable ER stress promotes mesenchymal–epithelial transition, slows cell-cycle progression, and delays the S-phase exit. Consequently, cisplatin-induced apoptosis was significantly decreased in stress-adapted cells, implying their acquisition of cisplatin resistance. Molecularly, we found that proliferating cell nuclear antigen (PCNA) ubiquitination and the expression of polymerase η, the main polymerase responsible for translesion synthesis across cisplatin-DNA damage, were up-regulated in ER stress-adaptive cells, and their enhanced cisplatin resistance was abrogated by the knockout of polymerase η. We also found that a fraction of p53 in stress-adapted cells was translocated to the nucleus, and that these cells exhibited a significant decline in the level of cisplatin-DNA damage. Consistently, we showed that the nuclear p53 coincided with strong positivity of glucose-related protein 78 (GRP78) on immunostaining of clinical biopsies, and the cisplatin-based chemotherapy was less effective for patients with high levels of ER stress. Taken together, this study uncovers that adaptation to ER stress enhances DNA repair and damage tolerance, with which stressed cells gain resistance to chemotherapeutics.     

激光在线测厚振动分析与精度优化

激光测厚具有安全可靠、测量精度高、测量范围大等优点,广泛应用于纸张、电池极片等薄膜类材料厚度的在线测量。带材宽幅方向扫描测厚时由于扫描架往复运动会产生机械振动,影响在线测厚精度。针对该问题,以锂离子电池极片厚度测量为例,使用双激光差动式测厚平台对电池极片和铜箔分别进行厚度测量,然后对测厚数据进行频谱分析,探究其振动规律的相似性,并基于频谱分析结果采用滑动带阻滤波方式对测厚数据进行处理,滤波后极片和铜箔的厚度极差分别降低了33.4%和73.8%,有效过滤了机械振动导致的测量误差,可满足极片和铜箔厚度测量的精度要求。     

Preparation of P(St-NMA) microsphere inks and their application in photonic crystal patterns with brilliant structural colors

Patterned photonic crystals with structural colors on textile substrates have attracted a special attention due to the great advantages in application, which currently become a research hot-spot. This study utilized an ink-jet printing technology to prepare high-quality photonic crystal patterns with structural colors on polyester substrates. The self-assembly temperature of poly(styrene-N-methylol acrylamide) (P(St-NMA)) microspheres set to construct photonic crystals were deeply optimized. Moreover, the structural colors of prepared photonic crystal patterns were characterized and evaluated. When the mass fraction of P(St-NMA) microspheres was 1.0 wt.%, the pH value ranged from 5 to 7, and the surface tension was in the range of 63.79 to 71.20 mN/m, inks could present the best print performance. At 60 °C, prepared P(St-NMA) microsphere inks were good for printing to obtain patterned photonic crystals with regular arrangement and beautiful structural colors. Specifically, photonic crystals with different colors could be constructed by regulating the diameter of microspheres in inks, and prepared structural colors exhibited distinct iridescent phenomenon. The present results could provide a theoretical basis for the industrial realization of patterned photonic crystals by ink-jet printing technology.     

A low power and low phase-noise 91~96 GHz VCO in 90 nm CMOS

This paper reports a 94 GHz CMOS voltage-controlled oscillator (VCO) using both the negative capacitance (NC) technique and series-peaking output power and phase noise (PN) enhancement technique. NC is achieved by adding two variable LC networks to the source nodes of the active circuit of the VCO. NMOSFET varicaps are adopted as the required capacitors of the LC networks. In comparison with the conventional one, the proposed active circuit substantially decreases the input capacitance (C_in) to zero or even a negative value. This leads to operation (or oscillation) frequency (OF) increase and tuning range (TR) enhancement of the VCO. The VCO dissipates 8.3 mW at 1 V supply. The measured TR of the VCO is 91~96 GHz, close to the simulated (92.1~96.7 GHz) and the calculated one (92.2~98.2 GHz). In addition, at 1 MHz offset from 95.16 GHz, the VCO attains an excellent PN of – 98.3 dBc/Hz. This leads to a figure-of-merit (FOM) of ?188.5 dBc/Hz, a remarkable result for a V- or W-band CMOS VCO. The chip size of the VCO is 0.75 × 0.42 mm², i.e. 0.315 mm².