化学还原法制备纳米铜粉的研究

本文采用KBH4在液相中化学还原CuSO4,并加入KOH和络合剂EDTA ,制得了纳米级的纯净的铜粉 ,通过调整反应物的浓度 ,可以消除Cu2 O等杂质。制备的纳米铜粉还存在一定程度的团聚 ,需试验加入分散剂来改善。     

新型超微晶软磁合金FePCCuMoSi微观结构缺陷的正电子湮没研究

用正电子湮没方法研究了新型超微晶软磁合金的微观结构缺陷，样品选用的是在不同温度下退火的Ｆｅ８１Ｐ１２Ｃ３Ｃｕ１Ｍｏ０．５Ｓｉ２．５合金，结果表明，合金的微观结构构陷大小，密度随退火温度有规律地变化，这种现象可能与非晶的晶化过程有关。     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.     

Oxidation of porous nanocrystalline titanium nitride. II. Scale structure and composition

We have used x-ray phase analysis to study the composition of the products of reaction between oxygen and nanocrystalline powders with particle sizes 15, 40, 55, and 80 nm, and also specimens pressed (and sintered) from them. The powders were oxidized in air at 100°C (400 h) to 500°C (5 min), while the sintered specimens were oxidized at 600–900°C for 15, 120, and 240 min. In all cases, in the initial oxidation step the oxynitride Ti(O_xN_y) is formed, which over time is oxidized to TiO, Ti₂O₃, Ti₃O₅, TiO₂ (anatase) and TiO₂ (rutile). In the range 600–800°C, formation of a continuous oxide layer and conversion of anatase to rutile slows down diffusion of oxygen in the scale. We have established that at 900°C, the growth rate of the scale thickness increases and so the reflections from the oxynitride are barely noticeable on the diffraction patterns taken from the surface of the oxidized specimen. In these diffraction patterns, along with strong reflections from the rutile, we also observed weak reflections from lower oxides and anatase, which may be due to reaction between oxygen and the titanium ions diffused to the scale surface. We have concluded that at T > 850°C, the mechanism for oxidation of TiN changes. This is due to superposition of counterdiffusion of titanium ions on the diffusion of oxygen. __________ Translated from Poroshkovaya Metallurgiya, Nos. 3–4(448), pp. 72–78, March–April, 2006.     

40Cr钢表面纳米层的微观结构

采用高能表面处理技术在40Cr钢表面制备出具有纳米晶体结构特征的表面层。利用透射电子显微镜和穆斯堡尔谱仪分析研究了表面纳米层的微观结构。结果表明，经过高能表面处理后，样品表面层晶粒细化为纳米晶，平均晶粒尺寸约为11nm。表面纳米层表面处渗碳体发生溶解。     

二氧化钛纳米晶的制备及光催化活性研究

本文用溶胶—凝胶法制备了不同晶相的TiO2纳米晶，将其负载于镍网上，以苯酚的降解为模型反应，研究对比了不同晶相TiO2纳米晶的光催化活性。结果表明，纯锐钛矿相的TiO2纳米晶的降解能力要强于锐钛矿与金红石混合相的TiO2纳米晶。     

纳米材料的力学性能

综述了纳米晶体材料和纳米碳管材料的力学性能研究的最新进展。实验数据表明纳米晶体材料的强度与其晶粒尺寸大小的关系并不遵循Hall-Petch方程。相对于常规晶体材料 ,纳米材料的超塑性发生在更低的温度和更高的应变速率下。理论计算和实验数据表明 :纳米碳管是一种有着高刚性、高强度、高韧性和低密度的材料。纳米晶体材料和纳米碳管的异常的力学性能已经有了一些应用实例     

氮对纳米硅氮薄膜品化的影响

在电容式耦合等离子体化学气相沉积系统中，用高氢稀释硅烷和氮气为反应气氛制备纳米硅氮（ｎｃ－ＳｉＮｘ：Ｈ）薄膜结果表明：当Ｎ＿２／ＳｉＨ＿４气体流量比（Ｘｎ）从１增加为４时，薄膜的晶态年从５８％降至１４％，晶粒尺寸从１０ｎｍ降至５ｕｍ，Ｎ／Ｓｉ含量比从０．０３增至０．１２．当Ｘｎ≥５，则生成非晶硅氮（ａ－ＳｉＮｘ：Ｈ）薄膜．当Ｘｎ从１增加为１０时，薄膜暗电导率从１０￣（－５）（Ωｃｍ）￣（－１）降至１０￣（－１１）（Ωｃｍ）￣（－１），具有逾渗行为，这与薄膜的晶态率紧密相关．     

The Effect of Polymer Optoelectronic Properties on the Performance of Multilayer Hybrid Polymer/TiO2 Solar Cells

We report a study of the effects of polymer optoelectronic properties on the performance of photovoltaic devices consisting of nanocrystalline TiO₂ and a conjugated polymer. Three different poly(2‐methoxy‐5‐(2′‐ethylhexoxy)‐1,4‐phenylenevinylene) (MEH‐PPV)‐based polymers and a fluorene–bithiophene copolymer are compared. We use photoluminescence quenching, time‐of‐flight mobility measurements, and optical spectroscopy to characterize the exciton‐transport, charge‐transport, and light‐harvesting properties, respectively, of the polymers, and correlate these material properties with photovoltaic‐device performance. We find that photocurrent is primarily limited by the photogeneration rate and by the quality of the interfaces, rather than by hole transport in the polymer. We have also studied the photovoltaic performance of these TiO₂/polymer devices as a function of the fabrication route and device design. Including a dip‐coating step before spin‐coating the polymer leads to excellent polymer penetration into highly structured TiO₂ networks, as was confirmed through transient optical measurements of the photoinduced charge‐transfer yield and recombination kinetics. Device performance is further improved for all material combinations studied, by introducing a layer of poly(ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (PSS) under the top contact. Optimized devices incorporating the additional dip‐coated and PEDOT:PSS layers produced a short‐circuit current density of about 1 mA cm^–2, a fill factor of 0.50, and an open‐circuit voltage of 0.86 V under simulated AM 1.5 illumination (100 mW cm^–2, 1 sun). The corresponding power conversion efficiency under 1 sun was ≥ 0.4 %.     

等离子体氧化nc-Si/SiO_2多层膜的蓝光发射

报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析