Thermoelectric performance of polycrystalline Sn1-xCuxSe (x = 0–0.03) prepared by high pressure method

P-type Sn_1-xCu_xSe (x = 0–0.03) polycrystal was prepared through melting synthesis and high pressure (6.0 GPa) sintering (HPS) method. The composition and microstructure of the samples was analyzed, and the thermoelectric transport properties were investigated in the temperature range of 303 K–823 K. The results indicate that the electrical conductivity increases as Cu content increases. An observable improvement is found for the Seebeck coefficient when x is 0.01. In addition, the total thermal conductivities (κ_tot) of all samples decrease with rising temperature, and reach its minimum values at 773 K. As a result, the maximum power factor (PF) and ZT_max value are 378 μW m⁻¹ K⁻² and 0.79 for Sn_0.97Cu_0.03Se at 823 K, respectively.     

SnSe薄膜的两步法制备与光电性能研究

采用电子束蒸镀预制层,再对预制层进行硒化的两步法工艺,通过调节硒化温度和退火时间,在玻璃基底上成功制备了SnSe薄膜。利用X射线衍射、拉曼光谱、扫描电子显微镜、紫外可见近红外分光光度计等研究了SnSe薄膜的物相、微观形貌和光学性能。结果表明,在450℃下硒化退火60min可制备出纯相的多晶SnSe薄膜,其带隙为0.93eV。在功率为200mW/cm²的980nm激光照射下,对SnSe薄膜进行了光电响应特性测试,通过曲线模拟得出所制薄膜的响应时间和恢复时间分别为62和80ms。     

Te与In共掺杂对Cu2SnSe3热电性能的影响

Cu₂SnSe₃基化合物作为一种绿色环保的新型热电材料, 近年受到了研究者的广泛关注。然而, 本征Cu₂SnSe₃基化合物载流子浓度低、电性能较差。为优化Cu₂SnSe₃化合物的电热输运性能, 本研究采用熔融、退火结合放电等离子烧结技术制备了一系列Cu₂SnSe_3-xTe_x (x=0~0.2)和Cu₂Sn_1-yIn_ySe_2.9Te_0.1 (y=0.005~0.03)样品, 研究了Te固溶和In掺杂对材料电热输运性能的影响。Te在Cu₂SnSe_3-xTe_x (x=0~0.2)化合物中的固溶度为0.10, Te固溶显著增加了材料的载流子有效质量, 从本征Cu₂SnSe₃样品的0.2m_e增加到Cu₂SnSe_2.9Te_0.1样品的0.45m_e, 显著提高了材料的功率因子, Cu₂SnSe_2.99Te_0.01样品在300 K下获得最大功率因子为1.37 μW·cm^-1·K^-2。为了进一步提高材料的电传输性能, 本研究以Cu₂SnSe_2.9Te_0.1为基体并选取In在Sn位掺杂。In掺杂将Cu₂SnSe₃基化合物的载流子浓度从5.96×10¹⁸ cm^-3 (Cu₂SnSe_2.9Te_0.1)显著提高到2.06×10²⁰ cm^-3 (Cu₂Sn_0.975In_0.025Se_2.9Te_0.1)。调控载流子浓度促进了材料多价带参与电传输, 材料的电导率和载流子有效质量显著增加, 功率因子得到大幅度提升, 在473 K下Cu₂Sn_0.995In_0.005Se_2.9Te_0.1化合物获得最大功率因子为5.69 μW·cm^-1·K^-2。由于电输运行性能显著提升和晶格热导率降低, Cu₂Sn_0.985In_0.025Se_2.9Te_0.1样品在773 K下获得最大ZT为0.4, 较本征Cu₂SnSe₃样品提高了4倍。     

Single-Crystal SnSe Thermoelectric Fibers via Laser-Induced Directional Crystallization: From 1D Fibers to Multidimensional Fabrics

Single-crystal tin selenide (SnSe), a record holder of high-performance thermoelectric materials, enables high-efficient interconversion between heat and electricity for power generation or refrigeration. However, the rigid bulky SnSe cannot satisfy the applications for flexible and wearable devices. Here, a method is demonstrated to achieve ultralong single-crystal SnSe wire with rock-salt structure and high thermoelectric performance with diameters from micro- to nanoscale. This method starts from thermally drawing SnSe into a flexible fiber-like substrate, which is polycrystalline, highly flexible, ultralong, and mechanically stable. Then a CO₂ laser is employed to recrystallize the SnSe core to single-crystal over the entire fiber. Both theoretical and experimental studies demonstrate that the single-crystal rock-salt SnSe fibers possess high thermoelectric properties, significantly enhancing the ZT value to 2 at 862 K. This simple and low-cost approach offers a promising path to engage the fiber-shaped single-crystal materials in applications from 1D fiber devices to multidimensional wearable fabrics.     

Growth and thermal studies of SnSe single crystals

Single crystals of SnSe have been grown by a direct vapour transport (DVT) technique. The confirmation of single crystallinity and lattice parameter determination of the grown crystals have been made by using electron and X-ray diffraction techniques respectively. The thermal analysis of the crystals has been studied by the well known TGA and DTA techniques. The results obtained during the analysis showed the stability of SnSe phase at higher temperatures. The implications of the results have been discussed.     

SnSe single crystals: Sublimation growth,deviation from stoichiometry and electrical properties

Large SnSe single crystals of high metallurgical quality have been grown by a closed tube vapor phase technique. Hall measurements on annealed and quenched samples were performed to establish the stability range of the compound. The crystals are p-type with hole concentrations between 3 × 10¹⁵ and 2 × 10¹⁸ cm⁻³ and mobilities up to 7 × 10³ cm /Vs at 77 K.     

Nanoarchitectonics of SnSe with the impacts of ultrasonic powers and ultraviolet radiations on physical and optoelectronic properties

In this study, SnSe nanostructures prepared by the precipitation method were exposed to the irradiation of ultrasound waves at different powers and ultraviolet (UV) rays. The results of structural analyses revealed the formation of SnSe nanostructure phases and the presence of Sn and Se, respectively. The structural properties, including stress and strain, were calculated for all main peaks obtained from the XRD analysis conformed to the orthorhombic phase. The FESEM images demonstrated that they were narrow-size nanorods alongside agglomeration particles dispersed in all samples. PL results illustrated changes in the ultrasonic power, UV, and simultaneous irradiation of these waves led to the shift of emission bands and intensities. The absorption spectra were measured in the range of 200–1100 nm, indicating that they were shifted into higher wavelengths. Additionally, energy band gap (E_g) changes showed that their E_g was in the range of ～ 1.30 eV. I-V characteristics results demonstrated that increase of ultrasonic power, UV, and ultrasound irradiation resulted in the enhancement of responsivity and sensitivity. Furthermore, they had detectivity in the range of 12–122 × 10⁷ (Jones). Moreover, the irradiation of ultrasound and UV rays had a considerable impact on mobility and carrier concentration.