（英）硫代硫酸钠浓度对电沉积制备铜锌锡硫硒薄膜性质的影响

采用后硒化Cu-Zn-Sn-S电沉积预制层的方法制备了铜锌锡硫硒薄膜,其中Cu-Zn-Sn-S预制层是通过含有不同浓度的硫代硫酸钠电解液电沉积而成的.实验发现,硒化前后薄膜的性质与硫代硫酸钠浓度密切相关.SEM,EDS,XRD,Raman和透射光谱分析表明,当硫代硫酸钠的浓度为5 mM时,沉积的薄膜形貌平整,晶粒明显,组分贫锌,具有单一的铜锌锡硫硒结构,且其带隙为1.11 eV; 在浓度高于5 mM下沉积的薄膜形貌粗糙并产生杂相硒化锡; 在浓度低于5 mM下沉积的薄膜组分严重贫锌并生成大量的Cu2SnSe3.     

两种制备多晶铜铟硒薄膜方法的比较

采用真空顺序蒸发铜铟金属预置层后真空硒化退火的方法(硒化法),以及真空三元叠层蒸发后氮气气氛退火的方法(叠层法)分别制备了太阳电池吸收层材料CuInSe2薄膜.通过X射线衍射、扫描电子显微镜、能量色散X射线分析技术等分析手段对薄膜进行了表征.结果表明:两种方法制备的薄膜形貌都比较致密均匀,晶粒直径分别约1.5 μm和约1 μm.组分分析表明所制薄膜均为富铜CIS.硒化法制备的CIS薄膜具有单一的黄铜矿相结构;而叠层法制备的薄膜含有少量杂相,如β-In2Se3等.因此硒化法制备的薄膜更适于作为太阳能吸收层材料.     

磁控溅射金属预置层后硒化法制备CuInSe_2薄膜工艺条件的优化

采用四因素四水平的正交实验法优化了磁控溅射金属预置层后硒化法制备CuInSe2 薄膜的工艺条件 .调节四个较为重要的影响因素 ,即Cu/In比、硒化时间、硒化温度和硒源温度制备得到 16个CuInSe2 样品 .用Hall效应仪对薄膜的电学性能进行了研究 ,并且通过XRD研究了薄膜的结构性能 .得到了制备具有较好电学性能的CuInSe2 薄膜的优化条件为 :Cu/In比 1 133,硒化温度 4 2 0℃ ,硒化时间 2 0min ,硒源温度 2 0 0℃ .在此优化条件下得到的薄膜Hall迁移率可以达到 3 19cm2 /(V·s) ,XRD结果表明薄膜中没有杂相存在 .     

磁控溅射金属预置层后硒化法制备CuInSe2薄膜工艺条件的优化

采用四因素四水平的正交实验法优化了磁控溅射金属预置层后硒化法制备CuInSe2薄膜的工艺条件.调节四个较为重要的影响因素,即Cu/In比、硒化时间、硒化温度和硒源温度制备得到16个CuInSe2样品.用Hall效应仪对薄膜的电学性能进行了研究,并且通过XRD研究了薄膜的结构性能.得到了制备具有较好电学性能的CuInSe2薄膜的优化条件为:Cu/In比1.133,硒化温度420℃,硒化时间20min,硒源温度200℃.在此优化条件下得到的薄膜Hall迁移率可以达到3.19cm2/(V*s),XRD结果表明薄膜中没有杂相存在.     

CuInSe2薄膜的化学溶液制备方法

采用了一种低成本化学溶液法制备铜铟硒(CuInSe_2,CIS)薄膜.研究了预退火温度、硒化温度及基片衬底等实验参数对材料性能的影响.采用硝酸铜和氯化铟配置前驱体溶液,旋涂法制膜,后经480℃硒化退火得到CIS薄膜.XRD测试结果表明薄膜结晶性良好,具黄铜矿结构;SEM测试结果显示薄膜由较大晶粒组成,表面相对平整致密;EDX测试显示薄膜组分相对合理,略贫Cu而富Se.采用此薄膜为吸收层制备CIS原型薄膜太阳能电池,其光电测试显示单层CIS光伏响应达到1.6%.     

硒化温度对Cu(In, Al)Se2薄膜结构和光学性质的影响

采用了磁控溅射制备Cu-In-Al金属前驱体薄膜,后硒化快速退火得到铜铟铝硒(Cu(In,Al)Se2,CIAS)薄膜.研究了硒化温度对CIAS薄膜晶体结构和光学性质的影响.研究发现CIAS薄膜的晶体结构依赖于硒化温度,其禁带宽度随硒化温度升高发生红移.研究结果表明,CIAS薄膜的最佳硒化温度为540℃,其晶体结构为纯黄铜矿结构,禁带宽度为.34 eV,对应太阳电池理论最大效率的吸收层材料禁带宽度     

近空间升华法制备高取向硒化锑薄膜太阳电池

硒化锑太阳电池以其原材料丰富、工艺简单和结 构稳定等优势,近年来得到了快速发 展。本论文采用近空间升华法制备硒化锑光电薄膜,并对硒化锑的生长进行了机理研究和参 数优化。结果显示:衬底温度的提升有助于硒化锑薄膜的晶化。当衬底温度为 340 ℃时,薄 膜具有较高的晶化率和致密的表面形貌。另一方面,蒸发间距的改变能够调制硒化锑薄膜的 择优取向。当蒸发间距为10 mm时,薄膜具有明显的(002)取向的择优,对应(Sb₄Se₆)n带 垂直于衬底生长,使硒化锑光吸收层具有优异的载流子传输特性。将优化好的硒化锑薄膜应 用到太阳电池中,以FTO/CdS/Sb₂Se₃/P3HT/C的器件结构,获得了5.78%的光电转换效率,其 中开路电压为0.375 V,短路电流密度为28.01 mA/cm²,填充因子为54.94%。以上研究为高 取向性硒化锑太阳电池的优化制备提供了技术路线,并显示出了硒化锑太阳电池的研究潜力 。     

硒化温度对SnSe2薄膜材料性能的影响

采用射频磁控溅射加硒化的两步法在超白玻璃衬底上生长SnSe₂薄膜,采用XRD、光学透过谱、Raman光谱、XPS和SEM等方法对薄膜进行性能表征。通过设置不同的硒化温度,研究不同硒化温度对所得薄膜相结构、物相与组分、表面形貌等性能的影响。结果表明:350℃,40min硒化所得薄膜为片状晶粒,光学带隙为1.46eV,相结构和均匀性等性能在该硒化条件下均为最佳。     

退火工艺对Al离子注入的4H-SiC表面形貌的影响

通过应用多次Al离子注入和CVD中的高温退火技术,在SiC片表面形成了p型层。p型层中各深度下Al的浓度均为110¹⁹cm^-3,层厚为550nm。本文应用三种不同的退火工艺对注入后的SiC进行退火。通过测量和比较表面粗糙度,发现通过石墨层覆盖来保护表面的退火工艺可以很好的阻止SiC表面在高温退火下的粗化,粗糙度保持在3.8nm。通过其他两种(在氩气保护下、在SiC保护片的覆盖下)退火工艺退火所得到的表面有明显的台阶,粗糙度分别为12.2nm和6.6nm。     

用磁控溅射和退火方法制备AlSb多晶薄膜

采用磁控溅射法在玻璃衬底上制备Al/Sb预制多层薄膜,然后将Al/Sb预制多层薄膜在退火炉中退火得到AlSb多晶薄膜.用X射线衍射(XRD)法测薄膜结构;用扫描电镜(SEM)测薄膜Al/Sb成分比,结果表明AlSb多晶薄膜具有单一的晶相、均匀的结构,以及粒径大约20nm的晶粒.根据电导率(lnσ)与温度(T)的关系得到电导激活能为0.21和0.321eV,为制备出适用于太阳电池的AlSb多晶薄膜奠定了一定的技术基础.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-