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1.
A solar concentrator with one-axis tracking is being developed at our institute. This concentrator system achieves a high geometrical concentration ratio of 300 using a parabolic trough mirror and a three-dimensional second stage consisting of compound parabolic concentrators. The design of the system as well as the characterisation of the second stage is described in this paper. 相似文献
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A typical GaInP/GaInAs/Ge tandem solar cell structure operating under AM0 illumination is proposed, and the current-voltage curves are calculated for different recombination velocities at both front and back-surfaces of the three subcells by using a theoretical model including optical and electrical modules. It is found that the surface recombination at the top GaInP cell is the main limitation for obtaining high efficiency tandem solar cells. 相似文献
6.
T. Kitatani Y. Yazawa S. Watahiki K. Tamura J. Minemura T. Warabisako 《Solar Energy Materials & Solar Cells》1998,50(1-4):221-227
We have developed an optimal growth procedure for gas-source MBE production of a GaInP/GaAs heterointerface. The interface quality is crucial to obtaining high-performance GaAs solar cells with a GaInP barrier layer because minority carrier lifetime depends strongly on the interface structure. In situ Reflective High-Energy Electron Diffraction (RHEED) observation during the growth across the GaInP/GaAs heterointerface revealed that the phosphorus atoms are replaced by arsenic atoms in the near-interface region of the GaInP layer, and a transient layer acting as a carrier trap is formed. Introduction of a GaP layer into the interface was found to be effective in suppressing carrier loss. From Composition Analysis by Thickness Fringe-Transmission Electron Microscopy (CAT-TEM) images, it was also found that the optimum thickness of inserted GaP to avoid the generation of misfit dislocations is 1 nm. 相似文献
7.
Jung-Ja Yang Rafal Spirydon Tae-Yeon Seong S. H. Lee G. B. Stringfellow 《Journal of Electronic Materials》1998,27(10):1117-1123
Transmission electron diffraction (TED) and transmission electron microscope (TEM) studies have been made of organometallic
vapor phase epitaxial GaxIn1−xP layers (x ≈ 0.5) grown at temperatures in the range 570–690°C to investigate ordering and ordered domain structures. TED
and TEM examination shows that the size and morphology of ordered domains depend on the growth temperature. The ordered domains
change from a fine rod-like shape to a plate-like shape as the growth temperature increases. The domains are of width 0.6∼2
nm and of length 1∼10 nm. Characteristic diffuse features observed in TED patterns are found to depend on the growth temperature.
Extensive computer simulations show a direct correlation between the ordered domain structures and such diffuse features.
A possible model is suggested to describe the temperature dependence of the ordered domain structure. 相似文献
8.
E. Montgomery C. KrahmerK. Streubel T. HofmannE. Schubert M. Schubert 《Thin solid films》2011,519(9):2859-2862
We report on the temperature dependence of the dielectric function of Ga0.52In0.48P from room temperature to 500°C, and for photon energies from 0.75 eV to 5 eV. The undoped, highly disordered Ga0.52In0.48P thin film was grown by metal-organic vapor phase epitaxy lattice matched onto a (001) GaAs substrate. The dielectric function of Ga0.52In0.48P was measured by in-situ spectroscopic ellipsometry, and analyzed using Adachi's composite critical point model. We provide a second-order temperature expansion parameter set for calculation of the Ga0.52In0.48P dielectric function and its temperature dependence, and which may become useful for in situ growth control or optoelectronic device performance evaluation at elevated temperatures. We discuss the temperature-induced shift of critical point transition energy parameters. 相似文献
9.
H. K. Yow P. A. Houston C. C. Button J. P. R. David C. M. S. Ng 《Journal of Electronic Materials》1998,27(1):18-24
GaInP/GaAs and AlInP/GaAs heterojunction bipolar transistor (HBT) structures were grown by low pressure metalorganic vapor
phase epitaxy and annealed at various temperatures up to 675°C for 15 min. Subsequent comparisons with HBTs fabricated on
both annealed and unannealed control samples showed no effects for annealing up to and including 575°C, but significant changes
in the electrical characteristics were observed at an annealing temperature of 675°C. For the GaInP/GaAs devices, the base
current increased by a significant amount, reducing the gain and increasing the base current ideality factor from 1.07 to
1.9. Photoluminescence and electrical measurements on the structures indicated that both the emitter and base were affected
by an increase in the recombination times in those regions. These effects were attributed to an out-diffusion of hydrogen
from the base during annealing. The emitter of the AlInP/GaAs HBT was affected less by the hydrogen diffusion because of the
larger bandgap. These observations have important implications for device performance dependence on the details of the temperature/time
profile subsequent to the base growth. 相似文献
10.
Tae-Yeon Seong Jung-Ja Yang Mee Yi Ryu Jong-In Song Phil W. Yu 《Journal of Electronic Materials》1998,27(5):409-413
Chemical beam epitaxial (CBE) GaxIn1?xP layers (x≈0.5) grown on (001) GaAs substrates at temperatures ranging from 490 to 580°C have been investigated using transmission electron diffraction (TED), transmission electron microscopy, and photoluminescence (PL). TED examination revealed the presence of diffuse scattering 1/2{111}B positions, indicating the occurrence of typical CuPt-type ordering in the GaInP CBE layers. As the growth temperature decreased from 580 to 490°C, maxima in the intensity of the diffuse scattering moved from ½{111}B to ½{?1+δ,1?δ,0} positions, where δ is a positive value. As the growth temperature increased from 490 to 550°C, the maxima in the diffuse scattering intensity progressively approached positions of $\frac{1}{2}\{\bar 110\} $ , i.e., the value of δ decreased from 0.25 to 0.17. Bandgap reduction (~45 meV) was observed in the CBE GaInP layers and was attributed to the presence of ordered structures. 相似文献