Nonlinearity in regulating the metal to insulator transition of ReNiO3 towards low temperature range

Among the existing material family of the correlated oxides, the rare earth nickelates (ReNiO₃) exhibit broadly adjustable metal to insulator transition (MIT) properties that enables correlated electronic applications, such as thermistors, thermochromics, and logical devices. Nevertheless, how to accurately control the critical temperature (T_MIT) of ReNiO₃ via the co-occupation of the rare-earth elements is yet worthy to be further explored. Herein, we demonstrate the non-linearity in adjusting the T_MIT of ReNiO₃ towards lower temperatures via introducing Pr co-occupation within ReNiO₃ (e.g., Pr_xNd_1-xNiO₃ and Pr_xSm_1-xNiO₃) as synthesized by KCl molten-salt assisted high oxygen pressure reaction approach. Although the T_MIT is effectively reduced via Pr substitution, it does not strictly follow a linear relationship, in particular, when there is large difference in the ionic radius of the co-occupation rare-earth elements. Furthermore, the most significant deviation in T_MIT from the expected linear relationship appears at an equal co-occupation ratio of the two different rare-earth elements, while the abruption in the variation of resistivity across T_MIT is also reduced. The present work highlights the importance to use adjacent rare-earth elements with co-occupation ratio away from 1:1 for achieving more linear adjustment in designing the metal to insulator transition properties for ReNiO₃.     

Electrical oscillation generation with current-induced resistivity switching in VO2 micro-channel devices

We report large amplitude modulation waveforms as large as ~ 10 V using vanadium dioxide micro-channel devices operating under current-controlled conditions. The self-sustained electrical oscillations were generated by controlling the applied current in the negative differential resistance region of the investigated devices. An appropriate value of internal capacitance was achieved as parasitic capacitance in the device structure to stabilize the electrical oscillations. This eliminates the need of an external pulsed source or any external passive component connected to the micro-channel devices. Amplitude and frequency of the oscillation were tuned by illuminating the device micro-channel with an external laser. An equivalent circuit model was developed to simulate the waveforms. A good agreement between experiment and simulation was verified.     

Structural properties and sensing performance of CeTiO3 ceramic films as a solid-state pH sensor

In this paper, we have studied the impact of postannealing treatment on the structural properties and sensing characteristics of CeTiO₃ ceramic membranes deposited on Si substrate by sputtering for solid-state electrolyte-insulator-semiconductor (EIS) pH sensors. X-ray photoelectron spectroscopy, Auger electron spectroscopy, X-ray diffraction, and atomic force microscopy were used to study the chemical compositions, elemental depth profiles, film structures, and surface morphologies of CeTiO₃ ceramic membranes treated at three rapid thermal annealing (RTA) temperatures of 700, 800 and 900?°C. The sensing performance of the CeTiO₃ ceramic membranes annealed at three different RTA temperatures is strongly correlated to their structural properties. The CeTiO₃ EIS device after RTA at 800?°C exhibited the best sensing characteristics (pH sensitivity, hysteresis voltage and drift rate) among these RTA temperatures. We attribute this behavior to the optimal RTA temperature enhancing the Ce³⁺/Ce⁴⁺ ratio of CeTiO₃ ceramic membrane, reducing an interfacial layer at the CeTiO₃-Si interface, and increasing its surface roughness.     

电子束诱导沉积钴微米线及其铁磁性

通过电子束诱导沉积的方法制备了钴(Co)微米线,并利用扫描电子显微镜(SEM)、原子力/磁力显微镜(AFM/MFM)以及物性测量系统(PPMS)等手段对Co微米线的沉积尺寸、微结构、铁磁性和电学性质进行了测试和分析。研究结果表明:Co微米线轮廓清晰、均匀性好。在不同的沉积条件下,微米线的实际长度与设定长度基本一致;实际宽度数据呈类梯形分布,半高宽是设定值的2~10倍;实际厚度低于设定厚度的60%。沉积电流对Co微米线的铁磁特性有重要影响。当沉积电流大于0.5 nA时,样品呈现出良好的铁磁特性。另外,电学性能测试结果显示Co微米线呈现绝缘特性。成功制备了室温铁磁绝缘Co微米线,这将有助于深入开展微纳尺度的结构与器件的研究和应用。     

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.     

焦化设备隔热层下腐蚀与防护

介绍了焦化设备隔热层下腐蚀机理,分析了其影响因素及防护措施,其中金属保护涂层是最基本的方法,并提出了隔热涂料在焦化设备的应用。     

湿法成形轻质高强棒形支柱瓷绝缘子配方的研制

对原料特别是可塑性原料进行了研究和选择,研制成功了适合于湿法成型的高强度棒形支柱瓷绝缘子配方,并进行了生产性试验,实现了产品的轻质高强。经过江西湿法基地大规模生产,干燥合格率和烧成合格率均稳定在95%以上。     

火花塞陶瓷绝缘体高温分流电阻的研究

火花塞陶瓷绝缘体的高温分流电阻会影响火花塞的使用性能和寿命,笔者研究了氧化铝中Na2O含量、配方组成和烧结温度对火花塞陶瓷绝缘体高温分流电阻的影响。结果表明:随着氧化铝原材料中Na2O含量的增加,试样的高温分流电阻逐渐降低;在配方组成中,当CaO的含量由33%增加至40%,氧化铝原材料中Na2O含量为0.1%时,试样在500℃时的分流电阻由517MΩ提升至1 192MΩ;烧结温度低于1 580℃时,试样的高温分流电阻较低。     

棒形悬式复合绝缘子在变电站的应用及前景

阐述了复合绝缘子应用于变电站的主要问题是在强电场的条件下,如何长期可靠地运行,并结合当前的运行经验和研究成果,从电气特性和机械特性等方面提出了复合绝缘子应用于变电站具体的建议和运行维护措施。认为耐张串复合绝缘子应采用双串;宜使用耐酸芯棒,且芯棒直径不小于24mm;端部连接工艺用内楔式;连接金具需优化设计;采用双串进行电气间隙校核。