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排序方式: 共有381条查询结果,搜索用时 31 毫秒
1.
基于超快激光技术加工铜基正弦波弯曲型微通道,以去离子水为流动工质,在不同质量流量和热通量条件下,对弯曲型微通道内流动沸腾特性进行试验研究。基于温度/压力数据和流动可视化结果,发现通道传热系数随出口干度增大,呈迅速增大后减小并趋于稳定趋势,正弦波微通道相较直微通道具有更好的换热性能,传热系数最大提高127.7%,压降仅增加14.4%。波状通道结构能明显抑制流动沸腾中不稳定现象发生。通过可视化试验发现,随热通量增大,流型经历泡状流-弹状流-环状流的转变,换热主导机制由核态沸腾逐渐过渡到薄液膜蒸发。 相似文献
2.
Shunda Zhan Bangyan Dong Hongqiang Wang Yonghua Zhao 《Journal of the European Ceramic Society》2021,41(10):5075-5087
Bulk micromachining of single-crystal SiC has been challenging due to its extreme stability both mechanically and chemically. To address this issue, a novel tool-based electrolytic plasma etching method is proposed, with which micropatterns and micro-holes are fabricated in SiC in a hydrofluoric acid-free aqueous solution with no need for masks. The material removal is the result of the combined effects of electrolytic plasma chemistry and physics. The chemistry refers to the reaction of Si with hydroxyl radical to form various SiOx and with H to form silanes, and the reactions of C to form volatile carbon oxides or hydrocarbons, all of which are accomplished and enhanced under the electrolytic plasma atmosphere. Besides, the local high temperature of plasma thermally promotes the evaporation or dissolution of SiO2 in NaOH solution. The tool-based electrolytic plasma etching method provides alternative approaches for the fabrication of SiC-based MEMS and devices. 相似文献
3.
给出了一种改进的旋转式微机械薄膜残余应变测试结构.与已有的普通微旋转结构相比,改进的微旋转结构执行梁的宽度都保持一致.改进的微旋转结构在旋转变形之后,整个执行梁都会发生弯曲变形,所以在变形之后结构的残余应力非常小且分布均匀,没有普通微旋转结构的高应力集中,因此测量精度高于传统微旋转结构,更适合于高残余应变薄膜的测试.文中详细推导了改进微旋转结构的力学模型,并用有限元软件进行了模拟分析,同时详细地给出了改进的微旋转结构与传统微旋转结构的性能对比,最后用实验对改进微旋转结构的理论模型进行了验证. 相似文献
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硅微通道板微加工技术研究 总被引:2,自引:1,他引:1
微通道板(MCP)是二维通道电子倍增器,广泛用于电子、离子、紫外辐射和X-射线的探测与成像。提出一种硅微通道板(Si-MCP)制备工艺,分别采用干法刻蚀和电化学腐蚀微加工技术制备了硅微通道阵列(SMA)。重点研究了硅感应耦合等离子体刻蚀和光电化学腐蚀的特性,结果表明:硅光电化学腐蚀技术易于制备高长径比微通道,微通道侧壁更光滑、可制备倾斜通道、更适合制备Si-MCP. 制备出通道周期为6 μm、长径比大于50的SMA结构。采用厚层氧化实现了Si-MCP基体绝缘,采用原子层沉积工艺制备了连续倍增极,制作出Si-MCP样品。测试结果表明,采用半导体微加工技术制备的Si-MCP电子增益特性具有可行性。 相似文献
6.
《Microelectronics Journal》2015,46(2):166-173
Interdigital structures are realized on silicon substrates with high sensitivity to acceleration. The process employs a combination of anisotropic back-side micromachining with front-side vertical deep reactive ion etching of silicon. The incorporation of silicon-based nano-structures on the vertical planes of fingers leads to a significant increase in the capacitance of the device from 0.45 for simple planes to 40 pF for the nano-structured planes. Such structures show high sensitivity to inclination and accelerations, which could be due to field emission of electrons from nano-metric features. Around 8% change in the capacitance is observed upon a tilting sensor from 0° to 90° angle, which makes it proper for possible use as an earthquake sensor. A preliminary model for the capacitance and its dependence on the measurement voltage is presented. 相似文献
7.
《Microelectronics Reliability》2014,54(9-10):1794-1797
Focused Ion Beam (FIB) micromachining of Solid Immersion Lenses (SILs) in substrate material offers optical analysis solutions for current and future technologies without the limitations of external SIL systems. This work presents an efficient single iteration calibration algorithm. This algorithm enables the implementation of FIB created SILs using a variety of substrate materials, process chemistries and most importantly different SIL shapes to match sample thicknesses. The successful application on silicon and silicon carbide is presented by creating a 50 μm wide refractive lens segment with a radius of curvature of 60 μm. Laser scanning microscope images of a silicon sample demonstrate the optical benefit with a measured resolution of 274 nm. 相似文献
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In the present work, most common compensation structures (〈1 1 0〉 squares and 〈1 0 0〉 bars) have been used for convex corner compensation with 25 wt% TMAH-water solution at 90±1 °C temperature. Etch flow morphology and self-align properties of the compensating structures have been investigated. For 25 wt% TMAH water solution {3 1 1} plane is found to be responsible for corner undercutting, which is the fast etch plane. Etch-front-attack angle is measured to be 24°. Generalized empirical formulas are also discussed for these compensation structures for TMAH-water solution. 〈1 1 0〉 square structure protects mesa and convex corner and is the most space efficient compared to other compensation structures, but unable to produce perfect convex corner as 〈1 0 0〉 bar type structures. Both the 〈1 0 0〉 bar structures provide perfect convex corners, but 〈1 0 0〉 wide bar structure is more space efficient than the 〈1 0 0〉 thin bar structure. Implications of these compensation structures with realization of accelerometer structure have also been discussed. A modified quad beam accelerometer structure has been realized with these compensation structures using 25 wt% TMAH. 相似文献
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