面向毫克级仿昆扑翼微飞行器的力-力矩传感器

毫克尺度微型仿生飞行器基于柔性高频翅拍运动的升力机制,具有柔性大变形、振动非线性、多自由度力-力矩耦合等特征,其有效升力/力矩范围处于mN/(μN·m)量级,通用力传感器较难准确测定力学参数,进而给微型仿生飞行器的设计与控制带来一定的困难。文章提出了一种面向微型扑翼飞行器的新型力-力矩传感器,它可以在固定约束条件下实现微飞行器高频扑翼运动产生的升力和力矩的测量,为扑翼飞行器控制力和力矩解耦研究提供精度较高的数据。该传感器采用对称式多悬臂梁柔顺机构将升力/力矩转化为微小形变,结合高带宽、高精度电容位移测量装置,可以采集高频振动条件下的微小升力/力矩。基于梁理论进行了传感器力学建模,并结合有限元仿真验证了原理的可行性。对被测对象微型仿生扑翼飞行器的主要测量参数范围开展结构与工艺设计,实验结果显示,该传感器的升力测量范围为-10~10mN,力矩测量范围为-20~20μN·m,特征频率为1kHz,升力和力矩的灵敏度分别为0.01mN和0.01μN·m,经验证,对整机重量在80~250mg、工作频率在1~200Hz范围的微型扑翼飞行器具有较强的适用性。     

基于智能复合微结构的亚手掌尺度压电双驱扑翼微飞行器的研究

该文设计、制作和研究了一种亚手掌尺度的双驱扑翼微飞行器。飞行器主要采用多层平面材料的智能复合微结构（SCM）加工工艺进行加工。装配得到的样机整机质量为244 mg,翼展61 mm。对样机的压电驱动器性能进行了测试。测试结果表明,压电驱动器空载共振频率约为1 100 Hz,负载共振频率约为28 Hz;对样机进行了升力测试,得到样机的升力为 0.689 mN。     

微型扑翼飞行器控制系统设计

微型扑翼飞行器的控制是一个难点问题,不仅对体积和重量有一定限制,还需要使飞行器能够有一定的鲁棒性和自主飞行能力。本文设计的控制系统通过遥控和自主飞行相结合的方式,很好的实现了对微型扑翼飞行器的控制。并进一步通过飞行实验验证了控制系统的可行性,飞行效果良好。     

基于FIB-SEM双束系统的纳尺度真空间隙电学特性原位实验装置

纳米尺度真空电气击穿与绝缘特性研究是高电压与绝缘技术领域的前沿课题.一方面,随着微纳尺度加工技术的不断发展,电气部件和电子器件的特征物理尺寸已经逐步降低到微米、纳米甚至是分子原子尺度,并且在军事和民用领域得到越来越广泛的应用;另一方面,传统的放电击穿理论和绝缘性能评价方法无法用来解释和预估微纳尺度的放电特性和绝缘水平.因此,本文基于聚焦离子束和扫描电子显微镜(FIB-SEM)双束系统,借助纳米压电位移技术和微弱电流测量技术,建立了纳尺度真空间隙电学特性的原位研究系统.该系统不仅能够进行微纳尺度(曲率半径为15 nm~10μm)金属电极的原位加工,材料组成成分的定量分析,而且可以实现纳尺度真空间隙(>20 nm)的放电特性研究,为纳尺度击穿规律和绝缘特性的实验研究提供了有力的支撑.     

面向扑翼微飞行器的扭矩传感器研究

由于仿昆虫扑翼微飞行器需要在小范围内传输扭矩,且扭矩数值较小,一般的扭矩传感器或力传感器在其动态范围内均难以达到测量精度的要求。为了解决这一问题,提出了一种新型单轴扭矩传感器的设计方案,并完成了实际的制造和测试。该扭矩传感器的主体为殷钢材料,由激光加工制作而成,利用电容式位移传感器测量主轴旋转时目标板的位移,从而建立输出电压与施加扭矩之间的对应关系。传感器带宽和分辨率与微飞行器飞行实验的标准相匹配,同时对离轴负载保持不敏感。经实验测定,该单轴扭矩传感器的带宽为1.1kHz,测量范围为±260.8μNm,分辨率为0.013μNm,可以满足微飞行器扭矩的测量需求。     

飞秒激光制备仿生功能微纳结构及其应用

自然界中的微纳结构蕴藏着无尽的功能,为材料科学和工程技术的创新与发展带来了新的机遇。受生物体功能表面的启发,针对仿生表面开发出大量新功能,如结构色、超疏水、自清洁、光学性能调控等。飞秒激光制造是一种可以在微米和纳米尺度上精确控制材料结构的加工方式。通过调控飞秒激光加工参数,可以在多种材料体系中实现超越衍射极限的三维加工。飞秒激光直写加工技术的独特之处在于可以实现材料的跨尺度修饰,通过模拟优化,制备更加复杂的微纳结构。综述了利用飞秒激光技术制备仿生功能微纳结构的新进展,展示了该结构在结构色、表面浸润性、光学性能调控等方面的性能。讨论了飞秒激光制备仿生功能表面的应用前景。最后举例说明了激光微纳制造复杂高分辨率结构的新应用。     

微型仿生扑翼飞行器机载单目视觉系统的设计

近年来仿生扑翼飞行器利用视觉系统自主飞行成为一个具有广泛前景的研究方向,然而,其有限的带载能力对视觉传感器的类型、尺寸和重量提出了严格要求。目前商用图像处理模块的尺寸和重量较大,且需要回传图像信息至地面控制系统处理,文章旨在设计一款轻量化机载单目视觉系统,帮助微型仿生扑翼飞行器获取外界信息并实现智能自主的飞行。相比于其他图像处理模块,此系统以国产高算力芯片K210为核心进行设计,可脱离电脑端完成图像处理,尺寸仅为2.2 cm×2.3 cm,重量仅为3 g,内部兼容轻量化网络模型实现分类识别,通过串口进行信息交互,控制扑翼飞行器实现手势识别和目标追踪。     

基于PVDF压电传感器的微型扑翼机升力特性研究

采用一种新型方法测量微型扑翼机升力变化特性.在微型扑翼机机翼表面布置一矩形聚偏氟乙烯(PVDF)压电薄膜作为传感器,根据PVDF输出信号判断微型扑翼机对应的升力变化,与传统扑翼机升力变化特性实验研究相比,该方法具有简单、快捷、准确等优势.同时该文研究了微型扑翼飞行器在水平放置及迎风状态时的升力特性曲线,探讨了扑翼频率、飞行速度及扑翼的迎角对扑翼飞行升力的影响.     

飞秒激光加工机理及仿真研究进展

目前,微加工和精加工技术的迅速发展对微型化加工技术提出了更高的要求:将加工尺度提高到微米甚至纳米级,并且能够在材料内部实现三维立体微加工.飞秒激光可以突破衍射极限的限制,打破了加工极限,是当前先进制造技术的热点.本文综述了飞秒激光加工的发展历程和机理,并从库仑爆炸模型、微爆炸模型、色心模型以及双光子电离模型等方面对激光加工机理进行了阐述.对于飞秒激光的超快作用过程,仿真是分析加工机理、研究激光与材料作用过程的主要手段.分析了飞秒激光仿真所采用的双温模型、分子动力学模型及复合模型的特点及其适用范围,为飞秒激光加工的理论研究提供依据.最后指出了目前飞秒激光加工技术存在的问题,并对该技术的发展进行了展望.     

非线性激光制造的进展与应用（特邀）

超快激光是指脉冲宽度极窄的激光,其瞬时功率极高,与物质之间的相互作用呈现出非线性、非平衡、多尺度的状态。超快激光具有超快（脉冲持续时间短）、超强（瞬时功率高）、超精细（加工结构精细）等特点,由此实现的非线性激光制造技术可以打破传统微纳制造的局限,实现各类难加工材料和复杂微纳结构的超精细制造,精度可达亚微米至纳米量级,在微光学、生物医学、智能电子器件等前沿领域体现出了独特的应用价值。文中主要聚焦飞秒激光微纳加工技术前沿,简要概括了飞秒激光加工的特点;介绍了飞秒激光加工的主要技术手段,包括飞秒激光直写和飞秒激光并行加工;讨论了飞秒激光加工技术的前沿应用领域,如微纳光学器件、微流体器件、多功能结构化表面、生物医学工程等;最后,对飞秒激光加工制造技术未来的发展趋势和研究方向进行展望。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.