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1.
Surface-activated bonding (SAB), also called room-temperature bonding, is used in three-dimensional integration technology for semiconductor devices. An Ar fast atom beam (FAB) is used for SAB. However, conventional FAB guns must be replaced after hundreds of minutes of irradiation because carbon abrasion powders are generated by Ar ions sputtering in the gun. Therefore, this study develops a novel FAB gun with improved lifetime. The proposed FAB gun applies magnetic fields to guide Ar ions to reduce sputtering in the gun and improve irradiation efficiency. The proposed FAB gun indicates the possibility of improving gun lifetime. 相似文献
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提出了将纳米线技术与声表面波(SAW)技术相结合,分别利用纳米线气体敏感材料比表面积高,声表面波传感器质量敏感性高的优点,探索研制新一代声表面波气体传感器。该传感器具有响应速度快,灵敏度高,体积小,质量注和易集成等优点。该文主要从SAW专用芯片的研制、专用纳米线研制、专用纳米线的表面修饰与改性研究、检测电路设计等4方面进行了阐述。理论计算表明,相比传统二维结构的SAW气体传感器,三维纳米线结构的SAW气体传感器的在灵敏度和响应速度上都得到提高。 相似文献
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基于有限元压电材料中表面波传播的有限元分析原理,利用有限元分析软件COMSOL对基于ZnO单晶材料的声表面波器件进行多物理域耦合建模与仿真,提取出了符合声表面波振型的对称模态变形图和反对称模态变形图。通过谐振频率分析,计算出了ZnO单晶的相速度和机电耦合系数;通过频率响应分析,得出谐振器输入导纳、阻抗与频率之间的关系图;最后讨论了叉指换能器的结构对谐振频率、反谐振频率的影响,得出输入、输出叉指换能器(IDT)的叉指电极对数越大,插入损耗值越大,信号衰减越小。 相似文献
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This paper deals with propagation of Love type waves in a Piezomagnetic layer with corrugated boundaries overlying an inhomogeneous half-space. Inhomogeneity of elastic half-space is caused due to exponential variations in elastic parameters. Dispersion relations are obtained for magnetically open and short cases. Prominent effects of inhomogeneity, layer's width and corrugation on the phase velocity of considered wave are illustrated through graphs. Some particular cases are derived and exhibited through graphs. Also the influence of undulation parameter, elastic parameter, and piezomagnetic coefficient on phase velocity of considered wave has been marked separately. The present study finds its applications in designing and optimization of Love wave sensors and Seismic Acoustic Wave (SAW) devices. Findings may also be used for analytical study of wave propagation in piezomagnetic coupled structures. 相似文献
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Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a magnetron sputtering system. Atomic force microscopy (AFM) and X-ray diffraction (XRD) showed that the ZnO grown on 3C-SiC/Si had a smooth surface, a dominant c-axis orientation and a lower residual stress in ZnO thin film compared to that grown directly onto Si substrate. In order to evaluate the SAW characteristics of ZnO films on a 3C-SiC buffer layer, the two-port SAW resonators, based on inter-digital transducer (IDT)/ZnO/3C-SiC/Si and IDT/ZnO/Si structures, were fabricated and measured within a temperature range of 25-135 °C. The resulting 3C-SiC buffer layer improved the insertion loss by approximately 7.3 dB within the SAW resonator and enhanced the temperature stability with TCF = −22 ppm/°C up to 135 °C in comparison to that of TCF = −45 ppm/°C within a temperature range of 25-115 °C of the ZnO/Si structure. 相似文献
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