|
|||||
|
|
| 氧化锌基薄膜晶体管制备与研究 | |
| 引用本文： | 杨小天, 马仙梅, 朱慧超, 高文涛, 金虎, 齐晓薇, 高博, 董秀茹, 付国柱, 荆海, 王超, 常遇春, 杜国同, 曹健林,.氧化锌基薄膜晶体管制备与研究[J].电子器件,2008,31(1):121-123. |
| 作者姓名： | 杨小天 马仙梅 朱慧超 高文涛 金虎 齐晓薇 高博 董秀茹 付国柱 荆海 王超 常遇春 杜国同 曹健林 |
| 作者单位： | 1. 吉林建筑工程学院;长春光学精密机械与物理研究所 2. 长春光学精密机械与物理研究所 3. 吉林大学 4. 吉林建筑工程学院 |
| 基金项目： | Acknowledgements This work was supported by NCET（No. 050326, NSFC （ No. 60576054, 60576043, 60576056）, Jilin Univresity Innovation Foundation, project of Chang chun science and technology plans with contract number of 2006303, projects of Ministry of Construction China and Department of Education of Jilin province. |
| 摘 要： | 以玻璃为衬底,利用金属有机化学气相沉积(MOCVD)方法,在360℃附近实现ZnO薄膜的生长.利用ZnO为有源层制备底栅型薄膜晶体管.SiO2 被用作栅绝缘材料以有效的抑制漏泄电流的产生,达到氧化锌薄膜晶体管 (ZnO-TFT) 成功运作目的.ZnO-TFT 的电流开关(on/off)比达到104以上.ZnO-TFT 在可见光区平均光透过率大约为80%.以上表明利用ZnO 替代传统 Si 材料作有源层材料制备透明薄膜晶体管是可能的. |
| 关 键 词： | 氧化锌 透明 薄膜晶体管 MOCVD ZnO transmission thin film transistor MOCVD 氧化 锌基 薄膜晶体 管制 研究 Transistors Thin Film Study above transparent instead of traditional average optical transmission visible drain current ratio substrate glass |
| 文章编号： | 1005-9490（2008）01-0121-03 |
| 收稿时间： | 2007-04-30 |
| 修稿时间： | 2007年4月30日 |
The Fabrication and Study of ZnO-Based Thin Film Transistors |
|
| YANG Xiao-tian,MA Xian-mei,ZHU Hui-chao,GAO Wen-tao,JIN Hu,QI Xiao-wei,GAO Bo,DONG Xiu-ru,FU Guo-zhu,JING Hai,WANG Chao,CHANG Yu-chun,DU Guo-tong,CAO Jian-lin.The Fabrication and Study of ZnO-Based Thin Film Transistors[J].Journal of Electron Devices,2008,31(1):121-123. | |
| Authors: | YANG Xiao-tian MA Xian-mei ZHU Hui-chao GAO Wen-tao JIN Hu QI Xiao-wei GAO Bo DONG Xiu-ru FU Guo-zhu JING Hai WANG Chao CHANG Yu-chun DU Guo-tong CAO Jian-lin |
| Affiliation: | Jinlin Institute of Architecture Technology;2.ChangChun Institute of Optics Fine Mechanics and Physics;3. Jilin Universitys |
| Abstract: | Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition(MOCVD) at about 360℃. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabrica-ted on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible por-tion is～80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material. |
| Keywords: | ZnO transmission thin film transistor MOCVD |
| 本文献已被 维普 万方数据 等数据库收录！ | |
| 点击此处可从《电子器件》浏览原始摘要信息 | |
| 点击此处可从《电子器件》下载全文 | |