Microstructure and electrical properties of Y2O3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.     

Production of HfO2 thin films using different methods： chemical bath deposition,SILAR and sol-gel process

Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.     

Anodic behavior and microstructure of Al/Pb-Ag-Co anode during zinc electrowinning简

In order to study the anodic behavior and microstmctures of A1/Pb-Ag-Co anode during zinc electrowinning, by means of potentiodynamic investigations, scanning electron microscopy （SEM） and X-ray diffraction （XRD） analyses, the mechanism of the anodic processes playing on the surface of A1/Pb-0.8%Ag and A1/Pb-0.75%Ag-0.03%Co anodes prepared by electro-deposition from methyl sulfonic acid bath for zinc electrowinning from model sulphate electrolytes have been measured. On the basis of the cyclic voltammograms obtained, information about the corrosion rate of the composite in PbO2 region has been concluded. The microstructures were also observed by means of SEM and XRD which showed Pb-0.75%Ag-0.03%Co alloy composite coating has uniform and chaotic orientation tetragonal symmetry crystallites of PbSO4, but Pb-0.8%Ag alloy composite coating has well-organized orientation crystallites of PbSO4 concentrated in the certain zones after 24 h of anodic polarization. It is important that Al/Pb-0.75%Ag-0.03%Co anode oxide film consists of non-conductive dense MnO2 and PbSO4 and a, fl-PbO2 penetrated into which, in fact, are the active centers of the oxygen evolution after 24 h of anodic polarization.     

Materials,Metallurgy, Chemistry and Chemical Engineering Microstructure and phase forming process of Al-3Ti-0.2C-1RE grain refiner简

An Al-3Ti-0.2C-1RE grain refiner was prepared by in-situ reaction method. The microstructure was investigated by optical microscopy （OM）, scanning electron microscopy （SEM） equipped with energy-dispersive spectrometry （EDS） and X-ray diffraction （XRD）. The results show that the Al-3Ti-0.2C-1RE grain refiner is composed of α-Al, TiAl3, TiC and Ti2Al20Ce phases. Compared with Al-3Ti-0.2C refiner, the morphology of TiAl3 phase is changed and Ti2Al20Ce phases form with the addition of RE. Accordingly, the refining performance is improved. The phase forming process of the refiner is as follows： Blocky Ti2Al20Ce and fine blocky TiAl3 form in the melt at the initial stage of reaction, then the fine blocky TiAl3 gradually disappears, and the blocky Ti2Al20Ce grows bigger with the increase of holding time. The predominant mechanism to synthesize TiC particles is the reaction between high concentration of solute Ti atoms and graphite particles.     

Effect of annealing cooling rate on microstructure and mechanical property of 100Cr6 steel ring manufactured by cold ring rolling process简

Pre-heat treatment is a vital step before cold ring rolling and it has significant effect on the microstructure and mechanical properties of rolled rings. The 100Cr6 steel rings were subjected to pre-heat treatment and subsequent cold rolling process. Scanning electron microscopy and tensile tests were applied to investigate microstructure characteristic and mechanical property variations of 100Cr6 steel rings undergoing different pre-heat treatings. The results indicate that the average diameter of carbide particles, the tensile strength and hardness increase, while the elongation decreases with the decrease of cooling rate. The cooling rate has minor effect on the yield strength of sample. After cold ring rolling, the ferrite matrix shows a clear direction along the rolling direction. The distribution of cementite is more homogeneous and the cementite particles are finer. Meanwhile, the hardness of the rolled ring is higher than that before rolling.     

Low-temperature sintering and microwave dielectric properties of Li2MgTi3O8 ceramics doped with BaCu（B2O5）

The influences of BaCu(B₂O₅) (BCB) addition on sintering, microstructure and microwave dielectric properties of Li₂MgTi₃O₈ ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu(B₂O₅) addition can effectively reduce the sintering temperature to 900 °C, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of ɛ _r=24.5, Q×f =24 622 GHz, τ _f=4.2×10⁻⁶ °C⁻¹ are obtained for 1.0% BCB-doped Li₂MgTi₃O₈ ceramics sintered at 900 °C for 3 h. The BCB-doped Li₂MgTi₃O₈ ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.     

Heterogeneous photo-assisted Fenton catalytic removal of tetracycline using Fe-Ce pillared bentonite简

In the present work, a novel heterogeneous photo-Fenton catalyst was prepared by iron and cerium pillared bentonite. The catalyst Fe-Ce/bentonite was characterized by X-ray diffraction （XRD）, X-ray fluorescence （XRF）, Brunauer-Emmett-Teller （BET） and scanning electron microscopy （SEM） methods. It is found that Fe and Ce intercalate into the silicate layers of bentonite successfully. Tetracycline was removed by heterogeneous photo-Fenton reaction using the catalyst in this work. The effects of different reaction systems, hydrogen peroxide concentration, initial pH, catalyst dosage, UV power and introduction of different anions on degradation were investigated in details. The stability of catalyst was investigated through recycling experiment. The results show that removal rate of tetracycline is 98.13% under the conditions of 15 mmol/L H202, 0.50 g/L catalyst dosage, initial pH 3.0, 11 W UV lamp power and 60 min reaction time. However, the removal rate decreases after adding some anions. The hydroxyl radical plays an important role in heterogeneous photo-assisted Fenton degradation of tetracycline. The catalyst is very stable and can be recycled many times.     

Effects of various fillers on sintering,microstructures and properties of Ca-Ba-Al-B-Si-O glass/ceramic composites简

Low-temperature sintering and properties of LTCC （low temperature co-fired ceramics） materials based on CaO-BaO-Al2O3-B2O3-SiO2 glass and various fillers such as Al2O3, silica glass, christobalite, AlN, ZrO2, MgO-SiO2, TiO2 were investigated. The results show that densification, crystallization, microstructures and dielectric properties of the composites are found to strongly depend on the type of filler. The densification process of glass/ceramic composites with various fillers is mainly from 600 ℃ to 925 ℃, and the initial compacting temperature of samples is 600 ℃. The initial rapid densification of samples starts at its glass softening temperature. LTCC compositions containing Al2O3, silica glass, AlN and MgO-SiO2 fillers start to have the crystallization peaks at 890, 903, 869 and 844 ℃, respectively. The crystallization peaks are believed as correlated to the crystallization of CaAl2SiO8, β-SiO2, Ca2Al2SiO7 and β-SiO2. The composite ceramic with Al2O3, silica glass and TiO2 ceramic have a better dense structure and better smooth fracture surface. Sample for Al2O3 has the lowest dielectric loss tanδ value of 0.00091, whereas the sample for MgO.SiO, has the highest dielectric loss tanδ value of 0.02576. The sample for TiO2 has the highest dielectric constant value of 14.46, whereas the sample for AIN has the lowest dielectric constant value of 4.61.     

Preparation and characterization of Cu-doped mesoporous CeO2for CO oxidation简

Mesoporous CeO2 was first synthesized by hydrothermal method,and then used to synthesize different contents of CuO）x/CeO2（x：molar ratio of Cu to Ce） by deposition-precipitation method.These materials were characterized by X-ray diffraction（XRD）,N2 adsorption and desorption,H2 temperature programmed reduction（H2-TPR） and O2 temperature programmed desorption（O2-TPD） to study the crystal structure,surface area,and the mechanism of CO oxidation.The results show that,on XRD patterns,no evidence of CuO diffraction peaks is present until Cu loading is increased to 20%.The BET surface area decreases noticeably with the increase of Cu content.Compared with other samples,the better reducibility and activity oxygen species of（CuO）10%/CeO2coincide with its better catalytic activity.     

Influence of Ag doping on the microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics

Silver in the form of AgNO3 was added to ZnO-based varistor ceramics prepared by the solid-state reaction method.The effects of AgNO3 on both the microstructure and electrical properties of the varistors were studied in detail.The optimum addition amount of AgNO3 in ZnO-based varistors was also determined.The mechanism for grain growth inhibition by silver doping was also proposed.The results indicate that the varistor threshold voltage increases substantially along with the AgNO3 content increasing from 0 to 1.5mo1％.Also,the introduction of AgNO3 can depress the mean grain size of ZnO,which is mainly responsible for the threshold voltage.Furthermore,the addition of AgNO3 results in a slight decrease of donor density and a more severe fall in the density of interface states,which cause a decline in barrier height and an increase in the depletion layer.     

掺杂ZnO薄膜的微结构及电学特性

用(ZnO)1－x(Al2O3)xx=w(Al2O3)=0、0.01、0.02、0.05）陶瓷靶材为原料，通过电子束反应蒸发生长了非故意掺杂及Al掺杂的ZnO（Al掺杂ZnO）薄膜.采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性.结果表明，由（ZnO)1-x(Al2O3)x(x ≤ 0.02)的靶材生长得到的Al掺杂ZnO薄膜仍具有高度c-轴取向的纤锌矿晶体结构，但随着薄膜中Al掺入量的增加，其c-轴取向性有所退化；Raman光谱测量表明，Al掺杂ZnO薄膜的本征内应力随着Al掺入量的增加而增大，（ZnO)0.98(Al2O3)0.02薄膜中Al和Zn的原子个数比为6∶94，此时薄膜的内应力已接近饱和；Al掺杂ZnO薄膜的电阻率随着Al掺入量的增加呈现先减小后增大的特征，(ZnO)0.98(Al2O3)0.02薄膜具有最小的电阻率（7.85×10－4 Ω·cm），这归因于该类薄膜同时具有高电子浓度（1.32×1021 cm-3）和较高的电子迁移率（6.02 cm2/(V·s)）.     

Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method

Transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel route. The physical and chemical changes during thermal treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD patterns. The optimized preheating and post-heating temperatures were determined at ~420℃ and ~530℃, respec-tively. From thermodynamic and kinetics views, we investigated the mechanism of orientation growth with (002) plane parallel to the substrates. The surface morphologies of the films, post-heated at 420℃, 450℃, 530℃ and 550℃, respectively, were observed by SEM micrographs. The film post-heated at 530℃ shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140 Ω/Sq. The visible optical transmittance of all the films is beyond 90%. In addition, the annealing treatment in vacuum can contribute greatly to the electrical conductivity.     

氧化钐掺杂对氧化锌压敏陶瓷电学特性的影响

以氧化锌、氧化镨、氧化亚钴、氧化铬和氧化钐作为原料,经配料、球磨、造粒、压片和烧结等工序制得压敏电阻片,采用电流-电压特性测试、X射线衍射和扫描电子显微镜分别获得陶瓷的电性能参数,材料成分和微观结构图.实验结果表明:随着氧化钐含量的增加,氧化锌压敏陶瓷的非线性和压敏电压呈现先增大后降低的趋势.当氧化钐摩尔百分比低于0.3时,非线性系数和压敏电压随氧化钐含量的增加而增大.而氧化钐摩尔分数为0.3%时,压敏陶瓷具有最佳非线性电学特性,非线性系数为35,压敏电压为435伏/毫米;继续增加氧化钐至摩尔分数为0.5%时,非线性系数和压敏电压将会降低.氧化钐绝大多数聚集在晶界层,抑制晶粒生长,从而提高了压敏陶瓷的压敏电压.而极少数氧化钐与氧化锌发生置换反应,降低了氧化锌颗粒的电阻,从而提高了非线性.因此氧化锌压敏陶瓷因掺杂氧化钐提高了电性能而有望应用在高压领域.     

Effect of SiO_2 addition on the microstructure and electrical properties of ZnO-based varistors

The microstructure and electrical properties of ZnO-based varistors with the SiO 2 content in the range of 0-1.00mol% were prepared by a solid reaction route.The varistors were characterized by scanning electron microscopy,X-ray diffraction,energy-dispersive X-ray spectrometry,inductively coupled plasma-atomic emission spectrometry,and X-ray photoelectron spectroscopy.The results indicate that the average grain size of ZnO decreases with the SiO 2 content increasing.A new second phase (Zn 2 SiO 4) and a gla...     

Effects of aluminum doping on the microstructure and electrical properties of ZnO-Pr6O11-Co3O4-MnCO3-Y2O3 varistor ceramics

The effect of Al2O3 doping on the microstructure and electrical properties of the ZnO-Pr6O11-Co3O4-MnCO3-Y2O3 system was investigated in the range of 0.0-0.1mol%. The results reveal that Al2O3 doping has slight influence on the densification process. The microstructure of the ceramics comprises of ZnO phase, ZnAl2O4 spine phase and Pr-rich phases. The addition of Al2O3 greatly affects the electrical properties. The varistor voltage(E1mA/cm2) of ZPCMYAl samples decreases over a wide range from 5 530 V/cm to 1 844 V/cm with the increasing Al2O3 content. The nonlinear exponent(α) increases with the increasing Al2O3 content to 0.01mol%, whereas it is decreased by the further doping. The ZPCMYAl-based varistor ceramics with 0.01mol% Al2O3 exhibit the best electrical properties, with the nonlinear exponent(α) attaining the highest value of 33.4 and the lowest leakage current of 2.7 μA. The capacitance-voltage(C-V) measurement shows that the donor density(N d) at the grain boundaries increase from 1.58×1018 to 3.15×1018 cm-3, the barrier height(j b) increases from 1.60 to 2.36 eV, and the depletion layer width(t) decreases from 24.9 to 21.6 nm.     

Effect of Annealing on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by the Sol-gel Method

Bi_3.25La_0.75Ti₃O₁₂(BLT) thin films were prepared on Pt/Ti/SiO₂/Si substrate by the sol-gel method. The effect of annealing on their structures and ferroelectric properties was investigated. The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550°C. The remnant polarization increases and the coercive field decreases with the annealing temperature increasing. The leakage current density of the BLT films annealed at 700°C is about 5.8×10⁻⁸ Al cm² at the electric field of 250 kV/cm. Funded by the National Natural Science Foundation of China (No. 90407023)     

sol-gel法制备WO3薄膜的成膜性研究

用sol-gel法在ITO导电玻璃上制备了WO3电致变色薄膜,用光学显微镜对所有薄膜进行拍照,对比薄膜的成膜情况.经观察发现,薄膜前驱液浓度、拉膜速度和杂质对成膜性均有显著影响.从拉膜的过程方面讨论了出现上述情况的原因.