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1.
采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。 相似文献
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To investigate the evolution of the structural and enhanced magnetic properties of GdMnO3 systems induced by the substitution of Mn with Cr, polycrystalline GdMn1-xCrxO3 samples were synthesized via solid-state reactions. XRD characterization shows that all GdMn1-xCrxO3 compounds with single-phase structures crystallize well and that Cr3+ ions entering the lattice sites of GdMnO3 induce structural distortion. SEM results indicate that the grain size of the synthesized samples (a few microns) decreases as the Cr substitution concentration increases. Positron annihilation lifetime spectroscopy reveals that vacancy-type defects occur in GdMn1-xCrxO3 ceramics and that the vacancy size and concentration clearly change with the Cr content. The temperature and field dependence of the magnetization curves show that Cr substitution significantly influences the magnetic ordering of the gadolinium sublattice, improving the weak ferromagnetic transition temperature and magnetization of GdMn1-xCrxO3. The enhanced magnetization of GdMn1-xCrxO3 is closely related to the vacancy defect concentration. 相似文献
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Reliable joints of Ti3SiC2 ceramic and TC11 alloy were diffusion bonded with a 50 μm thick Cu interlayer. The typical interfacial structure of the diffusion boned joint, which was dependent on the interdiffusion and chemical reactions between Al, Si and Ti atoms from the base materials and Cu interlayer, was TC11/α-Ti + β-Ti + Ti2Cu + TiCu/Ti5Si4 + TiSiCu/Cu(s, s)/Ti3SiC2. The influence of bonding temperature and time on the interfacial structure and mechanical properties of Ti3SiC2/Cu/TC11 joint was analyzed. With the increase of bonding temperature and time, the joint shear strength was gradually increased due to enhanced atomic diffusion. However, the thickness of Ti5Si4 and TiSiCu layers with high microhardness increased for a long holding time, resulting in the reduction of bonding strength. The maximum shear strength of 251 ± 6 MPa was obtained for the joint diffusion bonded at 850 °C for 60 min, and fracture primarily occurred at the diffusion layer adjacent to the Ti3SiC2 substrate. This work provided an economical and convenient solution for broadening the engineering application of Ti3SiC2 ceramic. 相似文献
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Chenglai Xin Rong Yuan Jiang Wu Qingyuan Wang Yanan Zhou 《Ceramics International》2021,47(3):3411-3420
A novel method for fabricating a nano-Cu/Si3N4 ceramic substrate is proposed. The nano-Cu/Si3N4 ceramic substrate is first fabricated using spark plasma sintering (SPS) with the addition of nanoscale multilayer films (Ti/TiN/Ti/TiN/Ti) as transition layers. The microstructures of the nano-Cu metal layer and the interface between Cu and Si3N4 are investigated. The results show that a higher SPS temperature increases the grain size of the nano-Cu metal layer and affects the hardness. The microstructure of the transition layer evolves significantly after SPS. Ti in the transition layer can react with Si3N4 and with nano-Cu to form interfacial reaction layers of TiN and Ti–Cu, respectively; these ensure stronger bonding between nano-Cu and Si3N4. Higher SPS temperatures improve the diffusion ability of Ti and Cu, inducing the formation of Ti3Cu3O compounds in the nano-Cu metal layer and Ti2Cu in the transition layer. This study provides an important strategy for designing and constructing a new type of ceramic substrate. 相似文献
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Babilas R. Łoński W. Młynarek K. Bajorek A. Radoń A. 《Metallurgical and Materials Transactions A》2020,51(8):4215-4227
Metallurgical and Materials Transactions A - The influence of the chemical composition on the crystallization process, amorphous phase formation, and the anticorrosion properties of Al-Zr-Ni-Fe-Y... 相似文献
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