Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

Journal of Materials Science - Although chalcogenide materials continue to generate considerable interest due to great potentials for various optoelectronic devices, annealing for a long time in...     

Mammogram pectoral muscle removal and classification using histo-sigmoid based ROI clustering and SDNN

Multimedia Tools and Applications - Mammograms are the images used by radiologists to diagnose breast cancer. Breast cancer is one of the most common cancers in women. The early detection of breast...     

Formation of acrylamide in microwave-roasted sorghum and associated dietary risk

The effect of microwave roasting parameters (300, 450 and 600 W; 5, 10 and 15 min) on acrylamide content in sorghum grain was determined using High Pressure Liquid Chromatography (HPLC)-photo diode array (PDA) detector coupled with C-18 column. Samples roasted at 300 and 450 W did not possess acrylamide, whereas 600 W (15 min) favoured formation of 2740.19 µg/kg of acrylamide, levels far exceeding the defined European Union (EU) limits. The chronic daily intake (CDI) for acrylamide through consumption of such grain flour was 3.25–9.5-fold higher to Joint FAO/WHO Expert Committee on Food Additives (JECFA) defined high exposure limits. The margin of exposure (MOE) values ranged from 4.3 to 12.76 and from 11.07 to 32.27 for neoplastic and neurological effects, respectively, demonstrating high exposure and serious health concerns associated with dietary intake of this toxicant. This study assesses the risk for the Indian population and highlights the importance of optimising process parameters for food product to minimise such exposure risks.     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

基于VMD和BSA-KELM的高陡边坡位移预测模型研究

边坡位移的时间序列曲线存在复杂的非线性特性,传统的预测模型精度不足以满足预测要求。为此提出了基于变分模态分解的鸟群优化-核极限学习机的预测模型,并用于河北省某水泥厂的边坡位移预测。该方法首先采用VMD把边坡位移序列分解为一系列的有限带宽的子序列,再对各子序列分别采用相空间重构并用核极限学习机预测,采用鸟群算法优化相空间重构的嵌入维度和KELM中惩罚系数和核参数三个数值,以取得最优预测模型。最后将各个子序列预测值叠加,得到边坡位移的最终预测值。结果表明：和KELM、BSA-KELM、EEMD-BSA-KELM模型相比,基于VMD的BSA-KELM预测精度更高,为边坡位移的预测提供一种有效的方法。     

High energy storage and ultrafast discharge in NaNbO3-based lead-free dielectric capacitors via a relaxor strategy

Dielectric capacitors with decent energy storage and fast charge-discharge performances are essential in advanced pulsed power systems. In this study, novel ceramics (1-x)NaNbO₃-xBi(Ni_2/3Nb_1/3)O₃(xBNN, x = 0.05, 0.1, 0.15 and 0.20) with high energy storage capability, large power density and ultrafast discharge speed were designed and prepared. The impedance analysis proves that the introducing an appropriate amount of Bi(Ni_0·5Nb_0.5)O₃ boosts the insulation ability, thus obtaining a high breakdown strength (E_b) of 440 kV/cm in xBNN ceramics. A high energy storage density (W_total) of 4.09 J/cm³, recoverable energy storage density (W_rec) of 3.31 J/cm³, and efficiency (η) of 80.9% were attained in the 0.15BNN ceramics. Furthermore, frequency and temperature stability (fluctuations of W_rec ≤ 0.4% over 5–100 Hz and W_rec ≤ 12.3% over 20–120 °C) were also observed. The 0.15BNN ceramics exhibited a large power density (19 MW/cm³) and ultrafast discharge time (~37 ns) over the range of ambient temperature to 120 °C. These enhanced performances may be attributed to the improved breakdown strength and relaxor behavior through the incorporation of BNN. In conclusion, these findings indicate that 0.15BNN ceramics may serve as promising materials for pulsed power systems.     

Opportunistic Routing Protocol Based EPO–BES in MANET for Optimal Path Selection

Wireless Personal Communications - Despite its various benefits, the Mobile Ad-hoc Network (MANET) has a number of obstacles due to its mobility, unstable topology, energy efficiency, and other...     

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...