Laboratory Studies to Determine Suitable Chemicals to Improve Oil Recovery from Garzan Oil Field

Garzan oil field is located at the south east of Turkey. It is a mature oil field and the reservoir is fractured carbonate reservoir. After producing about 1% original oil in place (OOIP) reservoir pressure started to decline. Waterflooding was started in order to support reservoir pressure and also to enhance oil production in 1960. Waterflooding improved the oil recovery but after years of flooding water breakthrough at the production wells was observed. This increased the water/oil ratio at the production wells. In order to enhance oil recovery again different techniques were investigated. Chemical enhanced oil recovery (EOR) methods are gaining attention all over the world for oil recovery. Surfactant injection is an effective way for interfacial tension (IFT) reduction and wettability reversal. In this study, 31 different types of chemicals were studied to specify the effects on oil production. This paper presents solubility of surfactants in brine, IFT and contact angle measurements, imbibition tests, and lastly core flooding experiments. Most of the chemicals were incompatible with Garzan formation water, which has high divalent ion concentration. In this case, the usage of 2-propanol as co-surfactant yielded successful results for stability of the selected chemical solutions. The results of the wettability test indicated that both tested cationic and anionic surfactants altered the wettability of the carbonate rock from oil-wet to intermediate-wet. The maximum oil recovery by imbibition test was reached when core was exposed 1-ethly ionic liquid after imbibition in formation water. Also, after core flooding test, it is concluded that considerable amount of oil can be recovered from Garzan reservoir by waterflooding alone if adverse effects of natural fractures could be eliminated.     

5A06-O aluminium–magnesium alloy sheet warm hydroforming and optimization of process parameters

The uniaxial tensile test of the 5A06-O aluminium–magnesium (Al–Mg) alloy sheet was performed in the temperature range of 20–300 °C to obtain the true stress–true strain curves at different temperatures and strain rates. The constitutive model of 5A06-O Al–Mg alloy sheet with the temperature range from 150 to 300°C was established. Based on the test results, a unique finite element simulation platform for warm hydroforming of 5A06-O Al–Mg alloy was set up using the general finite element software MSC.Marc to simulate warm hydroforming of classic specimen, and a coupled thermo-mechanical finite element model for warm hydroforming of cylindrical cup was built up. Combined with the experiment, the influence of the temperature field distribution and loading conditions on the sheet formability was studied. The results show that the non-isothermal temperature distribution conditions can significantly improve the forming performance of the material. As the temperature increases, the impact of the punching speed on the forming becomes particularly obvious; the optimal values of the fluid pressure and blank holder force required for forming are reduced.     

Passive micromixer with baffles distributed on both sides of microchannels based on the Koch fractal principle

Since the beginning of the 21st Century, the development of microfluidic chip technology has been very rapid and has attracted the attention of more and more scholars. As an important part of the microfluidic chip, the performance of the micromixer is critical. The fractal structure in the microchannels helps to improve the mixing performance of the micromixer and improve the mixing efficiency of the micromixer. The research results of other scholars are of great significance to the research of the present paper, which mainly studies the effect of changing the baffle state on the mixing efficiency of the micromixer based on the Koch fractal principle. Through simulation analysis, it was found that the mixing efficiency of the baffles distributed on both sides of the microchannel was higher than the mixing efficiency of the baffles distributed on the microchannel side. When the distance between adjacent baffles was divided into 0.15, 0.25 and 0.35 mm, simulated data suggested that the baffle distance of 0.15 mm was best. Increasing the number of baffles from six to eight groups increased the mixing path of the fluid in the microchannel and improved mixing efficiency. A comparison of mixing efficiencies of the 0°, 15° and 30° baffle angles revealed that very significant improvement in mixing efficiency was obtained at 30°. © 2019 Society of Chemical Industry     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

云杉八齿小蠹Ips typographus L.虚拟模型构建方法研究

本文以云杉八齿小蠹Ips typographus Linnaeus为例,经标本选取,观察虫体整体形态,绘制整体结构草图,电子显微镜观察局部、得到局部数字图像,分别建立虫体每一部分的高精度细节。把模型每部分拼装在一起组成整体模型,构建出了云杉八齿小蠹三维虚拟昆虫数字化模型。     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

“The innovation governance dilemma: Alternatives to the precautionary principle”

This article reviews the four innovation governance approaches (the precautionary principle, responsible innovation, permissionless innovation, and the innovation principle), including definitions, important attributes, and weaknesses found in each approach, and when utilizing an affinity diagram as a tool of analysis, identifies their distinctive characteristics and common relationships. A discussion section summarizes the paper’s findings and offers insights into where there is common relationships for further possible convergence between two innovation governance approaches – responsible innovation and permissionless innovation – that conceptually share substantially more in common than they contrast with each other. For addressing this challenge, the study recommends the following policy proposals: embrace artificial intelligence/machine learning/data analytics for risk management and regulatory adaptability; consider “soft law”as an option to public regulation; and substitute corporate citizenship for corporate social responsibility.     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.