A hybrid homogeneously weighted moving average control chart for process monitoring: Discussion

The sensitivity of a monitoring scheme depends on many factors including the variance of the charting statistic which is very important in the computation of the control limits. This paper discusses the computation of the variance of the recently proposed hybrid homogeneously weighted moving average (HHWMA) $\overline{X}$ scheme which was based on an incorrect assumption. The correct variance is used to evaluate the run-length characteristics of the HHWMA $\overline{X}$ scheme. It is observed that the incorrect variance has a significant impact on the sensitivity (or performance) of the HHWMA $\overline{X}$ scheme.     

Off‐grid DoA estimation method of wideband signals

In this paper, an off‐grid direction of arrival (DoA) estimation method is proposed for wideband signals. This method is based on the sparse representation (SR) of the array covariance matrix. Similar to the time domain DoA estimation methods, the correlation function of the sources was assumed to be the same and known. A new measurement vector is obtained using the lower‐left triangular elements of the covariance matrix. The DoAs are estimated by quantizing the entire range of continuous angle space into discrete grid points. However, the exact DoAs may be located between two grid points; therefore, this estimation has errors. The accuracy of DoA estimation is improved by the minimization of the difference between the new measurement vector and its estimated values. Simulation results revealed that the proposed method can enhance the DoA estimation accuracy of wideband signals.     

基于学科竞赛的中医药类院校程序设计课程教学模式的探索

高素质人才培养是我国可持续发展战略、科教兴国战略以及人才强国战略等多项发展战略的一项基础性工程。本文针对中医药类院校程序设计类课程实践教学模式单一等教学实际，以“学科竞赛”为平台，“赛教结合”为理念，以《C语言程序设计》为例，从现存问题、赛教结合模式的引入、建立实施及其评价机制4个方面展开阐述，旨在提高学生学习积极性和能力。     

云杉八齿小蠹Ips typographus L.虚拟模型构建方法研究

本文以云杉八齿小蠹Ips typographus Linnaeus为例,经标本选取,观察虫体整体形态,绘制整体结构草图,电子显微镜观察局部、得到局部数字图像,分别建立虫体每一部分的高精度细节。把模型每部分拼装在一起组成整体模型,构建出了云杉八齿小蠹三维虚拟昆虫数字化模型。     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

Damage identification in concrete using impact non-linear reverberation spectroscopy

High amplitude non-linear acoustic methods have shown potential for the identification of micro damage in brittle materials such as concrete. Commonly, these methods evaluate a non-linearity parameter from the relative change in frequency and attenuation with strain amplitude. Here, a novel attenuation model is introduced to describe the free reverberation from a standard impact resonance frequency test, together with an algorithm for estimating the unknown model coefficients. The non-linear variation can hereby by analyzed over a wider dynamic range as compared to conventional methods. The experimental measurement is simple and fully compatible with the standardized free-free linear impact frequency test.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.