全文获取类型
收费全文 | 7848篇 |
免费 | 913篇 |
国内免费 | 610篇 |
专业分类
电工技术 | 954篇 |
综合类 | 665篇 |
化学工业 | 1115篇 |
金属工艺 | 207篇 |
机械仪表 | 316篇 |
建筑科学 | 266篇 |
矿业工程 | 163篇 |
能源动力 | 389篇 |
轻工业 | 267篇 |
水利工程 | 40篇 |
石油天然气 | 283篇 |
武器工业 | 127篇 |
无线电 | 2274篇 |
一般工业技术 | 834篇 |
冶金工业 | 320篇 |
原子能技术 | 136篇 |
自动化技术 | 1015篇 |
出版年
2024年 | 32篇 |
2023年 | 152篇 |
2022年 | 220篇 |
2021年 | 301篇 |
2020年 | 292篇 |
2019年 | 241篇 |
2018年 | 213篇 |
2017年 | 289篇 |
2016年 | 333篇 |
2015年 | 317篇 |
2014年 | 522篇 |
2013年 | 513篇 |
2012年 | 599篇 |
2011年 | 643篇 |
2010年 | 532篇 |
2009年 | 488篇 |
2008年 | 468篇 |
2007年 | 482篇 |
2006年 | 447篇 |
2005年 | 364篇 |
2004年 | 296篇 |
2003年 | 294篇 |
2002年 | 266篇 |
2001年 | 196篇 |
2000年 | 160篇 |
1999年 | 105篇 |
1998年 | 107篇 |
1997年 | 84篇 |
1996年 | 71篇 |
1995年 | 50篇 |
1994年 | 55篇 |
1993年 | 63篇 |
1992年 | 34篇 |
1991年 | 21篇 |
1990年 | 26篇 |
1989年 | 21篇 |
1988年 | 13篇 |
1987年 | 15篇 |
1986年 | 7篇 |
1985年 | 2篇 |
1984年 | 2篇 |
1983年 | 7篇 |
1982年 | 4篇 |
1981年 | 3篇 |
1980年 | 2篇 |
1978年 | 5篇 |
1975年 | 2篇 |
1974年 | 3篇 |
1955年 | 1篇 |
1951年 | 2篇 |
排序方式: 共有9371条查询结果,搜索用时 15 毫秒
1.
2.
A. Nakano T. Shimazaki M. Sekiya H. Shiozawa K. Ohtsuka A. Aoyagi T. Iwakiri Z. Mikami M. Sato Y. Sugino K. Kinoshita T. Matsuoka T. Imamura Y. Takayama K. Yamamoto 《International Journal of Hydrogen Energy》2021,46(29):15649-15659
Monitoring the temperature in liquid hydrogen (LH2) storage tanks on ships is important for the safety of maritime navigation. In addition, accurate temperature measurement is also required for commercial transactions. Temperature and pressure define the density of liquid hydrogen, which is directly linked to trading interests. In this study, we developed and tested a liquid hydrogen temperature monitoring system that uses platinum resistance sensors with a nominal electrical resistance of approximately 1000 Ω at room temperature, PT-1000, for marine applications. The temperature measurements were carried out using a newly developed temperature monitoring system under different pressure conditions. The measured values are compared with a calibrated reference PT-1000 resistance thermometer. We confirm a measurement accuracy of ±50 mK in a pressure range of 0.1 MPa–0.5 MPa. 相似文献
3.
In the present work we have studied the effect of Na on the properties of graded Cu(In1−xGax)Se2 (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×1018–2.5×1019 cm−3) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively. 相似文献
4.
深亚微米MOSFET衬底电流的模拟与分析 总被引:1,自引:0,他引:1
利用器件模拟手段对深亚微米MOSFET的衬底电流进行了研究和分析,给出了有效的道长度,栅氧厚度,源漏结深,衬底掺杂浓度以及电源电压对深亚微米MOSFET衬底电流的影响,发现电源电压对深亚微米MOSFET的衬底电流有着强烈的影响,热载流子效应随电源电压的降低而迅速减小,当电源电压降低到一定程度时,热载流子效应不再成为影响深亚微米MOS电路可靠性的主要问题。 相似文献
5.
6.
I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献
7.
研究了多径信道下OFDM系统的一种新的载波频率跟踪算法,这种算法以判决反馈和接收端的时域信号重构为基础。推导了估计结果的精确解,比较了使用原估计结果和新的估计结果进行频偏补偿时系统跟踪性能的不同。通过对算法的仔细分析,发现除了通常的加性噪声外,信道估计误差、子载波数目和子载波的调制方式也影响频偏的估计结果和跟踪范围,而且子载波的数目和调制方式是决定性的因素。这种频率跟踪方法的优点是即使在很低的信噪比下仍然能获得高的跟踪精度,且实现相对简单。 相似文献
8.
光纤荧光传感器衰减寿命的加权对数拟合法 总被引:2,自引:0,他引:2
荧光寿命的检测是荧光光学传感器的核心内容,国际上尝试了多种方法来拟合这种理论上为单指数衰减信号的荧光衰减曲线。这些方法包括非线性函数标准拟合方法。即Levenburg-Marquardt方法,以及Prony方法、FFT方法,对数拟合法等等。为了克服在实际应用中发生的信号退化,需要在测量信号衰减寿命的同时测量信号的初始强度。文章介绍了一种加权的对数拟合法,经计算机仿真及实际数据测试均可以得到和Levenburg-Marquardt方法非常接近的结果,且拟合时间大大缩短,测量稳定性大大提高。仿真测试及具体实验测试结果显示了这种方法的有效性。该方法不仅与Levenburg-Marquardt方法的偏差曲线非常相似,而且实验测得的荧光寿命与Levenburg-Marquardt方法偏差在0.2%以内。 相似文献
9.
Edward C. Malthouse 《Data mining and knowledge discovery》2007,15(3):383-402
This paper discusses a new application of data mining, quantifying the importance of responding to trigger events with reactive
contacts. Trigger events happen during a customer’s lifecycle and indicate some change in the relationship with the company.
If detected early, the company can respond to the problem and retain the customer; otherwise the customer may switch to another
company. It is usually easy to identify many potential trigger events. What is needed is a way of prioritizing which events
demand interventions. We conceptualize the trigger event problem and show how survival analysis can be used to quantify the
importance of addressing various trigger events. The method is illustrated on four real data sets from different industries
and countries. 相似文献
10.