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本文首先简单介绍了低能离子束沉积技术及其发展状况。通过计算机模拟计算了无场区和减速系统中的离子轨道,讨论了低能离子束形成中空间电荷效应和透镜作用的影响,说明适当的减速电极结构可以与空间电荷效应匹配得到适于薄膜生长的低能离子束。本文介绍了一台可得到数电子伏低能离子束的装置,并由该装置产生的银离子束在单晶硅衬底上沉积,形成了Ag/Si薄膜。通过对薄膜直径及厚度的测量验证了计算机模拟计算的结果,测量结果与计算结果符合得相当好。X—射线衍射测量表明,沉积离子动能对薄膜结晶特性有明显影响,当沉积的银离子能量为15ev时,Ag(111)有最强优先取向。沉积前用氩离子对衬底表面进行轰击处理,也使薄膜的结晶特性有明显改善。 相似文献
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制备工艺条件对薄膜微结构的影响 总被引:2,自引:1,他引:1
用不同的方法在石英玻璃,YAG晶体,K9玻璃和LiNbO3晶体等几种衬底上制备了ZrO2,HfO2和TiO2薄膜。HfO2薄膜利用电子束蒸发(EB)、离子束辅助(IAD)和双束离子束溅射(DIBS)三种方法沉积。对其中的一些样品进行了不同温度下的退火处理,对所有的样品进行X射线衍射(XRD)测试,以获得不同条件下得到的薄膜的晶相及晶粒尺寸等的微结构参数。实验结果表明,薄膜的晶相结构以及晶粒尺寸强烈地依赖于沉积过程的各种技术参数,如衬底的种类、沉积温度、沉积方法和退火温度。利用薄膜表面扩散以及薄膜成核长大热力学原理解释了不同技术条件下的晶相结构和晶粒尺寸不同的原因。 相似文献
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横向固相外延生长及其影响因素的研究 总被引:1,自引:0,他引:1
对非超高真空条件下对在有SiO2图形的硅单晶衬底上用离子束溅射沉积非晶硅薄膜,经过真空退火形成的横向固相外延生长及其影响因素进行了研究,得出了有利于L-SPE生长的材料参数和工艺处理条件。 相似文献
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由于激光烧蚀靶材形成的等离子体羽辉呈高斯分布,导致沉积的大面积薄膜尤其是球面衬底上的薄膜极不均匀,严重限制了脉冲激光沉积法的应用。设计构建了旋转与变速摆动相结合的三维衬底机构,实现对半球面不同区域的连续沉积,保证了膜层的均匀性;建立膜厚分布的数学模型,模拟分析了运动参数对膜厚分布的影响;首次利用脉冲激光沉积技术制备出口径200 mm大尺寸半球面衬底上的均匀类金刚石膜,顶角80范围内膜厚不均匀性5%。脉冲激光沉积法在大口径半球面衬底上制备均匀类金刚石膜在空间观测等领域均具有巨大的应用前景。 相似文献
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Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes. 相似文献
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CdTe Films Deposited by Closed—space Sublimation 总被引:1,自引:0,他引:1
CdTe films are prepared by closed-space sublimation technology,Dependence of film crystalline on substrate materials and substrate temperature is investigated.It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃.And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity.Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing. 相似文献
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利用射频磁控溅射方法在玻璃和聚酰亚胺膜(PI)衬底上沉积了氧化铝质量分数为2%的掺铝氧化锌透明导电薄膜(ZnO∶Al)。系统地研究了不同衬底材料对薄膜的结构、电学以及光学性能的影响。分析表明,衬底材料对薄膜的结晶性和电学性能有较大的影响,对可见光透射率却影响不大。X射线衍射(XRD)分析得出所有的ZnO∶Al具有良好的c轴择优取向性,在可见光区(400~800nm)两种衬底上的薄膜都达到了85%的透射率。玻璃衬底上的薄膜呈现出更强的(002)衍射峰及相对更小的半峰全宽(FWHM),薄膜电阻率达到了2.352×10-4Ω.cm。电镜分析表明,相对于PI上的ZnO∶Al膜,玻璃上ZnO∶Al膜表面有更致密的微观结构及更大的晶粒尺寸。PI衬底上的ZnO∶Al膜也有相对较好的电、光学性能,其中电阻率达到了6.336×10-4Ω.cm,而且由于PI衬底柔性可弯曲,使得它适于在柔性太阳电池和柔性液晶显示中做窗口层材料及透明导电电极。玻璃上的ZnO∶Al膜则可应用在平板显示和太阳电池技术中。 相似文献
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ZHANGHW ROBERTCQ 《半导体光子学与技术》1995,1(1):81-83
Using the compound materials and double e-gun evaporation ,the compound optical films have been successfully deposited on K9 glass substrate.The refractive index of optical compound films deposited in diffeent parameters have been measured and theoretical formula for calculation refractive index of compound films have been derived.Tt is shown that the experimental curve for the variation of re-fractive index with wavelength in 0.4-1.4цm region and the theoretical one agree very well.Using these films,the laser reflecting mirror has been successfully coat-ed. 相似文献
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H. L. Hwang Klaus Y. J. Hsu Wei-I. Lee Y.-H. Shing K. C. Hsu B. H. Tseng 《Progress in Photovoltaics: Research and Applications》1998,6(3):201-206
This paper describes the various aspects of photovoltaic developments in Taiwan, which include applications of space and terrestrial solar cells, solar cell production and research on advanced thin-film solar cell materials. The advanced materials are hydrogenated polycrystalline silicon films deposited at low substrate temperatures and ternary chalcopyrite films with the potential for intrinsically stable and ultra-high-efficiency solar cells having a conversion efficiency in the vicinity of AMI 35%. © 1998 John Wiley & Sons, Ltd. 相似文献
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120 nm period gratings were fabricated by a novel method using ECR-CVD SiNx films. SiNx films deposited on photoresist have a higher etching rate than that on the flat semiconductor substrate. Good use of this difference was made to fabricate gratings whose period is one-half that of the original, formed by a holographic exposure technique 相似文献
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It is sometimes difficult to decide between thick-film and thin-film technologies in the fabrication of hybrid integrated circuits consisting of a ceramic substrate with deposited passive components and attached active devices. In the case of thick films, the deposited pattern of conductors, resistors, capacitors, and inductors is applied to the substrate by screen-printing and firing special conductive, resistive, or dielectric pastes. Thin-film layers, on the other hand, are deposited in vacuum by evaporation or cathode-sputtering of appropriate source materials. This article discusses the advantages and disadvantages of both technologies as well as their application ranges. 相似文献
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研究了采用垂直堆垛方式构筑的MoS2/C60范德华异质结的特性。利用直流磁控溅射法制备Mo薄膜,对Mo薄膜进行硫化退火处理得到MoS2薄膜,采用真空蒸镀法在MoS2薄膜上沉积C60进而形成MoS2/C60范德华异质结,并制备了Au/MoS2/C60/Al结构的器件。对MoS2薄膜的晶体结构进行了分析,对MoS2,C60及MoS2/C60薄膜的喇曼光谱及光吸收特性进行了测试和表征。结果表明:经过750℃退火后的MoS2晶型为2H型;由于在MoS2和C60薄膜之间范德华力的存在,相对于生长在Si/SiO2衬底上,沉积在MoS2上的C60薄膜喇曼特征峰发生红移;MoS2/C60薄膜在可见光范围内具有明显的光吸收特性;异质结表现出良好的整流特性,通过电子导电模型分析得出电子的传输机制包含热电子发射,空间电荷限制电流传导(SCLC)和隧穿现象。 相似文献