Fabrication and flow-sensor application of flexible thermal MEMS device based on Cu on polyimide substrate

A Cu on polyimide (COP) substrate was proposed as a MEMS material, and the fabrication process for a flexible thermal MEMS sensor was developed. The COP substrate application to MEMS devices has the advantage that typical MEMS structures fabricated in a SOI wafer in the past—such as a diaphragm, a beam, a heater formed on a diaphragm—can also be easily produced in the COP substrate in the flexible fashion. These structures can be used as the sensing element in various physical sensors, such as flow, acceleration, and shear stress sensors. A flexible thermal MEMS sensor was produced by using a lift-off process and sacrificial etching of a copper layer on the COP substrate. A metal film working as a flow sensing element was formed on a thin polyimide membrane produced by the sacrificial etching. The fabricated flexible thermal MEMS sensor was used as a flow sensor, and its characteristics were evaluated. The obtained sensor output versus the flow rate curve closely matched the approximate curve derived using King’s law. The rising and falling response times obtained were 0.50 and 0.67 s, respectively.

     

Focussed ion beam based fabrication of micro-electro-mechanical resonators

A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluating the possibilities for MEMS devices on thin SOI for future co-integration with CMOS circuitry on a single chip. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, achieving ∼100 nm gaps, thus ensuring an effective transduction. Different FIB parameters and etching parameters and their effect on the process are reported.     

Calibration of residual stress difference of MetalMUMPs silicon nitride films

The metal multi-user MEMS processes (MetalMUMPs) provide one nickel film, two silicon nitride films and one polysilicon film for constructing various nickel MEMS devices. The two silicon nitride films are either bonded together as a bi-layered structure or they sandwich the polysilicon film to form a tri-layered structure to support nickel structures. The residual stress difference of the two silicon nitride films causes undesired deformations of suspended MetalMUMPs devices. In this paper, the residual stress difference of the two MetalMUMPs silicon nitride thin films is calibrated and the result is 169 MPa. The Young’s modulus of the MetalMUMPs nitride films is also measured, which is 209 GPa.     

基于切割成型的侧壁表面压阻制作及其参数优化

为了提高MEMS执行器件对面内运动位移（或力学信号）检测的灵敏度并改善侧壁检测电阻制作工艺与其他工艺及其不同器件结构之间的兼容性问题,提出一种基于离子注入工艺和深度反应离子刻蚀（DRIE）工艺相结合制作检测梁侧壁压阻的方法。在此基础上,详细分析了影响位移检测灵敏度和分辨率的各种因素,并对侧壁压阻的结构尺寸及其工艺参数进行优化。最后,给出了侧壁表面压阻在几种不同类型典型MEMS执行器件中的应用,取得了很好的应用效果。     

基于BOE硅腐蚀现象的硅纳米线制作

介绍一种硅纳米线制作方法.在SOI顶层硅上制作硅纳米梁,通过离子注入形成pnp结构,利用新发现的没有特殊光照时BOE溶液腐蚀pn结n型区域现象,结合BOE溶液氧化硅腐蚀,实现硅纳米线制作.制作完全采用传统MEMS工艺,具有工艺简单,成本低,可控,可靠性好,可批量制作等优点.利用该方法制作出了厚50 nm,宽100 nm的单晶硅纳米线,制作的纳米线可用于一维纳米结构电学性能研究、谐振器研究等.     

MEMS AC voltage reference for miniaturized instrumentation and metrology

This work explores MEMS (Micro-Electro-Mechanical Systems) potentialities to fabricate AC voltage references through mechanical-electrical transduction that could be used for high precision electrical metrology and for applications in miniaturized instrumentation. AC voltage reference ranging from 5 V to 90 V have been designed and fabricated using the same Epitaxial Silicon On Insulator (SOI) surface micromachining process allowing an accurate control of both dimensions and material properties. The measured MEMS AC voltage reference values have been found in a good agreement with CoventorWare calculations. These tests structures have also been used to develop the read-out electronics to drive the MEMS.     

Fabrication of helically perforated gold, nickel, and polystyrene thin films

Helical microstructures are of interest for MEMS devices because of their spring-like shape. However, helices with micron and submicron dimensions are difficult to engineer using conventional processing techniques where patterning is accomplished lithographically. In this paper, we report the fabrication of porous gold, nickel, and polystyrene thin films with helical pore architectures. All films were made using a replication process, in which a thin film comprised of independent helical microstructures acted as the template. Filling of the template with metals was achieved by electroplating through the microstructures, whereas filling with polystyrene was achieved by capillary action. Porous films were produced from these composites by wet etch removal of the template material. Typical helical pores were on the order of 100 nm in diameter and extended through a film 1 /spl mu/m to 2 /spl mu/m thick. These films were generally more robust than the films from which they were templated, since they consisted of a solid network with helical pores rather than individual structures. Polymer and metal films with helical pores could be used for sensor and catalytic devices that take advantage of the chemical properties of these materials. Polymer films are also of interest for mechanical sensor and actuator devices since they are expected to be more compliant than both traditional MEMS materials and the films from which they were templated.     

一种低噪声MEMS加速度计设计与制作

为了提高微加速度计的噪声性能,研究了一种基于绝缘体上硅(SOI)技术的单轴MEMS加速度计的设计和加工方案。该微加速度计采用大面积质量块的电容式检测结构,通过增加检测质量,在保证灵敏度的前提下,有效地降低了微加速度计的机械布朗噪声,增强了信噪比。另外,该微加速度计采用一种基于Al保护层的MEMS SOI工艺技术制造,有利于提高微加速度计的整体精度水平。测试结果表明:微加速度计的本底噪声为20μgn/√Hz,灵敏度为2.5 V/gn。     

一种用于测试坡莫合金薄膜机械性能的拉伸模型

坡莫合金(Ni80Fe20)薄膜是微机电系统常用的磁性材料之一.介绍了一种用于测试其机械性能的单轴拉伸试验模型.此模型的特点是微小试件两端固定、且与加载机构集成在基片上,从而可减少操作工作量、提高对准精度.整个机构以微细加工方法制成:坡莫合金拉伸试件以光刻和电镀技术成型,其余的加载机构以湿法蚀刻制成.实验表明:使用此机构可以简单且高精度地对薄膜试件进行拉伸试验,获得多项力学性能参数,从而为MEMS器件设计和分析提供可靠的理论基础.     

一种MEMS薄膜材料的力学性能测试方法

介绍了一种用于MEMS薄膜材料力学特性测试的单轴拉伸试验方法。其特点是微小试件两端固定,且与加载机构集成在基片上,从而可减少操作工作量,提高对准精度。整个机构以微细加工方法制成,硅类试件以干法蚀刻成型,金属类试件以电镀方法成型,其余加载机构以湿法刻蚀制成。试验表明:使用此机构可以简单且高精度地对薄膜试件进行拉伸试验,获得多项力学性能参数,从而为MEMS器件设计和分析提供可靠的理论基础。     

Direct comparison of stylus and resonant methods for determining Young's modulus of single and multilayer MEMS cantilevers

As microelectromechanical systems (MEMS) become more complex and is produced in even greater numbers it becomes increasingly important to have a full understanding of the mechanical properties of the commonly used MEMS materials. One of the most important properties for MEMS is the Young's modulus. This work describes the direct comparison of two methods often used for measuring the Young's modulus of thin film materials using micro-cantilever test structures: a load-deflection method and a resonant frequency method. The comparison was carried out for a range of materials, different cantilever geometries as well as for single and multilayer materials. It was found that both methods produce results that agree with each other and also agree with the values most often given in the literature.     

Fabrication of a freestanding micro mechanical structure using electroplated thick metal with a HAR SU-8 mold

In this thesis, fabrication technology of a freestanding micro mechanical structure using electroplated thick metal with a high-aspect-ratio SU-8 mold was studied. A cost-effective fabrication process using electroplating with the SU-8 mold was developed without expensive equipment and materials such as deep reactive-ion etching (DRIE) or a silicon-on-insulator (SOI) wafer. The process factors and methods for the removal of SU-8 were studied as a key technique of the thick metal micro mechanical structure. A novel method that removes cross-linked SU-8 completely without leaving remnants of the resist or altering the electroplated microstructure was utilized. The experimental data pertaining to the relationship between the geometric features and the parameters of the removal process are summarized. Based on the established SU-8 removal process, an electroplated nickel comb structure with high-aspect-ratio SU-8 mold was fabricated in a cost-effective manner. In addition, a freestanding micro mechanical structure without a sacrificial layer was successfully realized. The in-plane free movements of the released freestanding structure are demonstrated by electromagnetic actuation. This research implies that various types of MEMS devices can be developed at a low-cost with design flexibility.     

The development of a low-stress polysilicon process compatible withstandard device processing

When surface micromachined devices are combined with on-chip circuitry, any high-temperature processing must be avoided to minimize the effect on active device characteristics. High-temperature stress annealing cannot be applied to these structures. This work studies the effects of deposition parameters and subsequent processing on the mechanical properties of the polysilicon film in the development of a low-strain polysilicon process, without resorting to high-temperature annealing. The films are deposited as a semi-amorphous film and then annealed, in situ at 600°C for 1 h, to ensure the desired mechanical characteristics for both doped and undoped samples. This low temperature anneal changes the strain levels in undoped films from -250 to +1100 με. The best results have been obtained for an 850°C anneal for 30 min which is used to activate the dopant (both phosphorus and boron). No further stress annealing was used, and 850°C does not present problems in terms of thermal budget for the electrical devices. It is shown that these mechanical characteristics are achieved by forming the grain boundaries during subsequent low temperature annealing, and not during deposition. TEM (transmission electron microscopy) studies have been used to investigate the link between the structure and mechanical strain. This has shown that it is the formation of the grain boundary rather than the grain size which has a significant effect on strain levels, contrary to reports in the literature. Using the above-mentioned deposition process, a series of experiments have been performed to establish the flexibility in subsequent processing available to the designer. Therefore, by careful consideration of the processing, a low-temperature polysilicon process, which can be used to fabricate thin micromachined structures, has been developed     

Crystalline silicon tilting mirrors for optical cross-connect switches

This paper discusses a two-piece approach for fabricating two-dimensional (2-D) arrays of tilting MEMS mirrors with application in very-large optical cross-connect switches. In the new process, a two-sided etching of silicon-on-insulator (SOI) wafers is used to create crystalline mirrors on a first wafer that is later aligned and bonded to a separate wafer containing the activation electrodes, traces, and bond pads. The approach allows a very close spacing of mirror elements and a very simple design for the mechanical structures, and also greatly simplifies wire routing.     

MEMS器件中多层金属薄膜溅射工艺研究

溅射工艺是制作微机电系统(MEMS)器件金属薄膜的主要方式,金属薄膜作为MEMS器件中的掩模层和功能层,要求薄膜应力小,粘附性、均匀性和可焊性好.通过对常用金属薄膜材料特性、多层金属薄膜溅射工艺和质量评价方法的研究得出了优化工艺的的方法,提高了多层金属薄膜的质量.     

Design of bossed silicon membranes for high sensitivity microphone applications

This paper deals with the design optimization of new high sensitivity microphones in silicon on insulator (SOI) technology for gas sensing applications. A novel geometry of bossed silicon membranes used as mechanical transducer has been studied by finite element modelling. Device fabrication is achieved from SOI substrates through deep backside anisotropic etching and shallow front side reactive ion etching to define a bossed sensing membrane with two reinforced areas. Thus, the influence of thin film stresses on the device performance is largely decreased. Polysilicon gauges are located on the reinforced areas to get a better linearity in pressure.     

有关MEMS结构运动过程中产生和辐射电磁波的研究

本文对典型的MEMS结构在运动过程中产生和辐射电磁波的机理以及产生的效应进行了研究。基于对MEMS结构的机械、电与电磁的耦合机制的研究,分析了MEMS结构运动过程中产生电磁波的机理。MEMS结构的相对运动以及基板上所携带电荷的运动都可以产生电磁波。在距离电磁波源1 cm处,MEMS结构辐射出的电磁波的频率为100 kHz;当MEMS结构间距为1.5μm,辐射出的电磁波的电场强度为0.45 V/m。产生的电磁波的频率与幅度受到距离,结构运动的频率以及具体形状的影响。本文还考虑了辐射出的电磁波对同一个芯片上其他器件的影响。     

Mechanical Coupling in Single Crystal Silicon for MEMS Design

There is an active interest in the development of microelectromechanical systems (MEMS) devices using single crystal silicon. Single crystal silicon is known to display anisotropic mechanical properties and several papers have been presented that deal explicitly with various aspects arising from the anisotropy. In this paper we develop comprehensive expressions and graphs to allow for the easy determination of anisotropic coupling effects in beam and plate structures with a particular emphasis upon     

A new scanning MEMS mirror

This paper introduces the development of a new MEMS-based optical mirror, which performs optical scanning function with discrete reflection angles in an out-of-plane configuration. The device was fabricated through Deep Reactive Ion Etching (DRIE) process on silicon-on-insulator (SOI) wafer, followed by assembly with two metalised glass dies. The optical mirrors can be tilted by electrostatic forces between the opposite electrodes on the SOI and glass dies. The most outstanding performance that can be expected from the device is the discrete and therefore, reliable tilting angle of the mirror, which is guaranteed by its unique mechanical structure and the electrostatically driven mechanism. In this paper, the working principle of the new MEMS mirror was presented, followed by the introduction of device design, mechanical simulation, microfabrication process, assembly solution, and some testing results. The potential application of this new MEMS mirror is for light beam scanning or optical sensing (detection).     

MEMS微型NO2气体传感器的研究

采用MEMS技术制作了硅基微型NO2气体传感器,选用高分子金属酞菁聚合物酞菁铜作为敏感膜,从半导体理论出发解释了酞菁铜的敏感机理。阐述了该传感器的结构与工艺流程,并测试了传感器的气敏特性、温度特性、响应时间和恢复时间等敏感特性。实验结果验证了酞菁铜对NO2气体的敏感性,该传感器可以检测到10^-6量级的NO2气体,且响应时间快。