MOCVD实现InGaAsP波导对接生长的研究

采用低压MOCVD技术,通过对接界面和对接工艺的优化,获得了高质量的InGaAsP材料构成的对接波导,测量得到的对接波导光学损耗为7cm-1,说明该技术可以用来制作高质量的光电子集成器件.     

光纤对接波导阵列的自对准技术

自对准技术是一种新的光纤与波导的对准技术,它更适宜光纤、波导阵列的对接。这种方法是利用V型槽的硅片与波导表面重叠调整而实现。它消除了角调整,化6维调节为2维调节。自对准V型槽的参数设计及腐蚀必须十分精细,它也是自对准技术的关键。     

准连续调谐35nm的SGDBR激光器的研制

对接生长技术可以独立优化不同区域的波导结构,有利于制作高性能的半导体光电子集成器件.文中采用MOCVD对接生长技术制作了SGDBR激光器,通过载流子注入,器件准连续调谐范围为35nm,在调谐范围内边模抑制比大于30dB.     

具有对接的内部分布布喇格反射波导的GaInAsP/InP集成激光器

<正> 本文提出了一种具有对接的内部分布布喇格反射波导(缩写为BJB-DBR)的新型GaInAsP/InP集成激光器,并进行了实验。理论分析表明,在这种结构中通过使两个波导的传播常数和场分布相匹配,可以在有源区与对接外波导之问得到98％的有效耦合,从而给出较大的制造公差。已制造出发射波长为1.55μm的BJB-DBR集成激光器样品,并在室温下     

准连续调谐35nm的SGDBR激光器的研制

对接生长技术可以独立优化不同区域的波导结构,有利于制作高性能的半导体光电子集成器件. 文中采用MOCVD对接生长技术制作了SGDBR激光器,通过载流子注入,器件准连续调谐范围为35nm,在调谐范围内边模抑制比大于30dB.     

基于周期极化晶体的QPM-SHG技术发展及其应用

随着新型高质量的非线性晶体的出现,准相位匹配技术成为非线性频率变换的最有效的方法。从周期极化晶体准相位匹配二次谐波发生器（QPM-SHG）的基本原理出发,简要介绍了实现周期极化晶体的方法和技术,总结了准相位匹配技术在光子学微结构晶体材料和波导材料中的最新研究进展和发展趋势,展望了用微结构波导QPM-SHG实现飞秒光纤光源的发展应用前景。     

光纤耦合声光Ti:LiNbO3波导器件的研究

波导型声光调制器作为高功率全光纤调Q激光器中的调制器件,光纤与器件对接耦合损耗大是影响其性能的主要因素。通过分析波导端面的Ti条半宽度与光波导模场分布的关系,计算出Ti∶LiNbO3锥形光波导与光纤耦合损耗最小时对应的最佳Ti条半宽度。分析得到Ti∶LiNbO3波导端面的Ti条半宽度对耦合损耗的影响,以及光波导的不同切型对最佳Ti条半宽度的影响。     

光纤耦合波导器件中光波导深度的研究

声光波导光开关可以作为高速光通信网络中的开关器件,其中光纤-器件对接耦合损耗大是影响其性能的主要因素.从光波导模场椭圆度和不对称度对模场失配引起的耦合损耗出发,计算Ti:LiNbO3波导与光纤耦合损耗最小时对应的最佳Ti离子扩散深度.分析得到不同切型的Ti:LiNbO3,波导中扩散深度、光纤模场半径对耦合损耗的影响.结果表明,y切Ti:LiNbO3波导耦合损耗约为z切波导的3倍.研究结果为共面型声光波导调制器中光波导制作参数的设计提供帮助.     

SiO2平面光波导的PECVD制备和膜层特性研究

研究了等离子体增强化学汽相沉积（PECVD）的光波导膜层的光学特性,论述了沉积工艺参量和退火处理对膜层性能的影响,优化工艺获得了高质量的波导膜层,成功设计制作了在1 550nm中心波长损耗低于0.1db/cm的平面光波导和阵列波导光栅（AWG）器件。     

对接波导的缝隙耦合特性

本文介绍由长缝隙耦合的端头对接的波导接头的电特性。利用伽略金法求解缝隙口面上等效磁流,获得散射场及其等效参量的通用表达式。波导尺寸,缝隙尺寸和位置是任意的。给出了数值计算实例和实验数据,二者相吻合。     

Coupling efficiency of butt-joined isotropic and anisotropicsingle-mode slab waveguides

Studied is the effect of axial displacement and angular misalignment on the power-coupling efficiency of a butt-joint between an isotropic and an anisotropic single-mode slab waveguide. The power-coupling coefficient is formulated by means of the boundary conditions at the interface of the butt-joint and the orthogonality relations between the modes in the outgoing waveguide. It is found from the numerical results that proper amounts of angular misalignment and axial displacement remarkably suppress transmission losses when the material coordinate system of the anisotropic waveguide is not aligned with its waveguide coordinate system in the plane defined by the propagation axis and the normal of the waveguide surface     

Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide

We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a deep-ridge passive waveguide by means of butt-joint selective area growth. Lossless operation with a high extinction ratio of 32 dB and clear eye opening at 10 Gb/s are successfully achieved. We confirm that the optical injection should be from the SOA side of the device to obtain a wide error-free range of incident optical power from -20 to +10 dBm. Our device could lead to richly functional photonic integrated circuits comprising arrayed waveguide gratings (AWGs) for advanced wavelength-division-multiplexing networks, since the passive waveguide has the same structure as AWGs.     

Laser diodes integrated with butt-jointed spotsize converterfabricated on 2-in wafer

Laser diodes integrated with spotsize converters by butt-joint technology combined with selective area metal organic vapor phase epitaxial (MOVPE) growth have been successfully fabricated. Satisfactory uniformity, reproducibility (>99%) and tolerance for low threshold current, a narrow emitted beam, and low optical coupling loss to fiber (<-2.4 dB) are obtained by using 2-in full wafer fabrication technology in the experimental fabrication. To investigate the tolerance in fabrication, the characteristic dependence on the variation of the wet etching time just before the butt-joint MOVPE growth and also on the mesa stripe width are investigated. A wide tolerance for these fabrication parameters is confirmed. The results indicate that the butt-joint technology is a useful and reliable process for realizing spotsize converters of the present type and also suggest that the technology is widely applicable to various photonic integrated circuits     

选择外延技术研制1.5μm DFB激光器和自对准模斑转换器集成器件

利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料,同时可以降低选择性生长对接结构的难度.所研制集成器件的阈值为4.4mA,在49.5mA下的输出功率为10.1mW,边模抑制比为33.2dB,垂直方向和水平方向上的远场发散角分别为9°和15°,1dB偏调容差分别为3.6μm和3.4μm.     

选择外延技术研制1.5μm DFB激光器和自对准模斑转换器集成器件

利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料,同时可以降低选择性生长对接结构的难度.所研制集成器件的阈值为4.4mA,在49.5mA下的输出功率为10.1mW,边模抑制比为33.2dB,垂直方向和水平方向上的远场发散角分别为9°和15°,1dB偏调容差分别为3.6μm和3.4μm.     

Experimental Realization of Monolithic Diffractive Broad-Area Polymeric Waveguide Dye Lasers

We discuss the first experimental realization of a polymeric waveguide dye laser with intracavity diffractive elements. Due to a special technology used the diffractive phase structures are directly integrated into the waveguide layer. Thus, there is no need for additional external optics or extensive alignment effort. The elements are used to support a Gaussian-like fundamental mode while at the same time suppresses the undesired higher order transverse laser modes. The technology has the potential to be used also for improving the beam quality of semiconductor broad area lasers.     

Dual-Band Vertically Stacked Laminated Waveguide Filter Design in LTCC Technology

A new design method of dual-band filters with laminated waveguide (or substrate integrated waveguide) is proposed by taking advantage of the existence of multiple cavity modes. The major design concept is adequately choosing geometric shape of laminated waveguide resonators to control the frequency bands, and positions of open slots and feeding probes to realize the desired coupling coefficients and external quality factors at both bands simultaneously. Two design examples with third-order and quasi-elliptic filter responses are given and verified by experiments. By using the low-temperature co-fired ceramic technology, the laminated waveguide resonators are vertically stacked, and the filter size can be miniaturized.      

基于基片集成波导（SIW）窄边耦合定向耦合器的多路功率分配/合成网络

基片集成波导（SIW）是近年来出现的一种新型传输线,随着现代LTCC技术和PCB技术的快速发展,SIW在现代微波电路中有着较好的应用前景。在此利用这种新型结构,设计了基于SIW窄边耦合定向耦合器的多路功率分配网络,实验样件的测试结果与Ansoft HFSS商用软件仿真结果吻合较好。