基于AD采样量化编码体制的IFM设计

瞬时测频(IFM)接收机能精确地测量雷达信号的载频,对单个脉冲或短暂脉冲群具有100%的截获概率,以及高精度和瞬时覆盖带宽宽的特点,是现代电子战系统中的重要组成部分。主要介绍了采用AD采样量化编码体制的工作原理以及相应的实现方式,通过与传统电阻环极性量化编码体制瞬时测频接收机进行性能对比,基于AD采样量化编码体制的瞬时测频接收机在鉴相器数量、印制板尺寸、测频误差方面明显优于传统电阻环极性量化编码体制的瞬时测频接收机。     

一种具有温度补偿的瞬时测频接收机的设计与实现

本文通过研究和分析温度对瞬时测频接收机测频误差的影响,改变了传统电缆恒温处理设计方案,在测频接收机中加入一温度补偿模块,实现对温度引起的测频误差的校正.并在硬件上实现了该测频系统.其中测频范围为2 GHz,通过测试,精度达到≤1 MHz(r.m.s),完全满足设计要求.     

瞬时测频接收机的温度补偿

瞬时测频接收机是电子战系统的重要组成部分之一。分析了瞬时测频接收机的温度补偿，并给出了实现恒温、测量温度和误差校正的方法。     

数字瞬时测频技术探讨

主要分析了数字式瞬时测频技术原理,从本质上减小测频误差所采取的一些方法。对复杂信号的检测,提出了一些可行的解决办法。     

基于采集相位的瞬时测频技术

介绍了通过采集接收信号的相位参数,利用对采集信号的相位参数进行双回路解调和选用高速率数字信号处理器(DSP)构成的瞬时测频技术,适用于雷达侦察测频系统。讨论了随机相位波动产生频率误差,给出了在测量频率范围内随机相位波动产生的频率误差的最大均方根值误差。     

瞬时测频系统测LFM信号载频误差分析

线性调频(LFM)信号是当前雷达广泛应用的一种信号形式。传统的瞬时测频(IFM)系统无法分析LFM信号的内部频率情况,所以会影响对LFM信号的测频准确性。通过简要介绍IFM的基本原理,分析了多路鉴相器组合的IFM系统的解频率模糊方法。在此基础上建立IFM系统处理LFM信号的模型,分析了引起IFM系统对LFM信号测频误差的原因。通过对理论分析结果进行仿真验证,为工程实际中的瞬时测频技术提供了理论参考。     

750波导引起测频偏差原因分析及解决方案

在某侦察设备中使用750波导引起宽带瞬时测频接收机测频误差偏大。分析了产生原因,并提出两种解决方案：延长测频接收机的采样时间;采用截止频率更低的650波导。     

一种超小型化瞬时测频接收机设计

现代电子战设备的发展方向是小型化、便携性、高性能,而瞬时测频接收机小型化的前提是元器件的小型化,由于芯片集成已经发展得很成熟,所以瞬时测频接收机前端微波器件的小型化是实现超小型化瞬时测频接收机的关键。文章先对LTCC技术特点进行简要介绍,提出一种基于LTCC技术的超小型化瞬时测频接收机设计,通过与采用传统微波传输线体制相关器组件的瞬时测频接收机进行性能对比,该超小型化瞬时测频接收机在体积、重量方面有明显的优势。     

影响IFM接收机测频精度因素的分析

根据瞬时测频接收机基本原理,介绍和分析了影响瞬时测频接收机测频精度的主要因素,并根据瞬时测频接收机系统应用提出了提高接收机的测频精度一些有效的处理方法,其方法在瞬时测频接收机系统中得到应用和验证,达到了工程的要求。     

相位推算法瞬时测频研究

相位推算法瞬时测频是基于数字接收机的计算方法。本文介绍了该算法的原理,分析、仿真了其误差,给出了校码处理原则,并进行了技术验证。结果表明,该算法具有测频精度高、瞬时性好的优点。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.