低压差线性稳压器

<正> MAX8873T/S/R、MAX8874T/S/R MAX8873T/S/R、MAX8874T/S/R是MAXIM公司生产的输出120mA的低压差线性稳压器。     

为便携式电子设备定制的数模转换器

为了满足便携式电子设备对功率损耗和体积的特殊要求，最近MAXIM公司开发出了一套三个系列的电压输出方式的数模转换器(DAC)。这三个系列DAC的型号分别为MAX5510～MAX5515、MAX5520～MAX5525及MAX5530～MAX5535，其分解力分别为8位、10位、12位。这类DAC的突出特点是格外省电，消耗电流仅为5μA(最大)，有利于延长电池的使用时间。     

带有同步整流器的DC-DC转换器MAX1742/1842

MAX1742／MAX1842是美国MAXIM公司生产的一种带有同步整流器的DC－DC转换器，它具有效率高，外围器件少等优点，并具有输出和过热保护功能。文中介绍了带有同步整流器的DC－DC转换器MAX1742／MAX1842的工作原理与工作特性，给出了典型应用电路和设计参数。     

流水线型模数转换器MAX1200及其与DSP的接口

MAX1200是新型流水线结构的模数转换器，通过该芯片的流水线结构可实现高速、高精度、低功耗的数据转换，文中介绍了MAX1200的工作原理，给出了MAX1200与DSP的接口应用电路。     

无滤波器双路D类功放MAX9713/9714原理与应用

MAX9713例AX9714是Maxim公司最新推出的无滤波器双路D类音频功率放大器。文中介绍了MAX9713／MAX9714的基本性能和主要特点，给出了MAX9713/MAX9714的引脚功能和主要性能参数，同时给出了该器件在音响设备上的应用电路。     

二线串行8位数模转换器MAX517的特性与应用

介绍了二线串行8位数模转换器MAX517的特性，并以AT89S52单片机与MAX517的通信为例，详细说明了MAX517的硬件连接与软件编程方法。     

二线串行8位数模转换器MAX517的特性与应用

介绍了二线串行8位数模转换器MAX517的特性，并以AT89S52单片机与MAX517的通信为例，详细说明了MAX517的硬件连接与软件编程方法。     

用于WCDMA功率放大器的新型DC-DC转换器MAX1820/MAX1821

MAXIM公司开发的芯片MAX1820/MAX1821是一种脉宽调制（PWM）DC-DC降压转换器，这是一种专为WCDMA蜂窝电话功率放大器供电设计的IC芯片，其供电电压范围为2.6-5.5V，输出电流可达600mA，1MHz PWM开关频率允许采用小尺寸外部元件，跳频模式使轻载静态电流降低至180μA.MAX1820可以动态控制，提供0.4-3.4V的输出电压范围，MAX1820/MAX1821内含一个低导通电阻的内部MOSFET开关和同步整流器，因而大大提高了转换效率，此外中还介绍了MAX1820/1821芯片的典型应用电路设计。     

ALTERA新款CPLD系列成本和功耗锐减

Altera公司发布了新款MAX 器件系列，据说这是业界成本最低的CPLD。MAX Ⅱ系列和上一代MAX产品相比，成本降低了一半，功耗只有其十分之一，同时保     

合理占用空间的智能数模转换控制系统

提出一种节省印制电路板空间的智能数模转换控制方法，系统以AT89C51为主体构成控制电路，通过MAX232芯片接收上位机发送的命令，控制串行数模转换器MAX517输出模拟量，以便控制设备。着重介绍了8位串行数模转换器MAX517的特性，并详细说明了AT89C51单片机与MAXS17和MAX232的硬件连接与软件编程方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.