关于用格林函数求解重人型谐振腔问题的讨论

本文讨论了用经典场论和算子理论求解重入型谐振腔的格林函数问题．首先讨论了经典场论中用Hφ的格林函数进行场匹配的方法，推导和讨论了Hφ的格林函数方程组、边界条件和格林函数的求解方法．这一方法只能用于回旋对称模式．为了解决耦合腔的问题需要高次模的格林函数，本文用算子理论求解了高次模的格林函数．这一格林函数对于零模与经典场论完全一致．本文也给出了高次模的格林函数、边界匹配方法和本征值的数值计算．这些工作为非轴对称耦合腔系统的分析和计算准备了必要的条件．     

用电磁场算子理论分析脊波导的传输特性

该文用电磁场算子理论通过多个虚拟边界的电场和磁场的耦合求解脊波导的本征值,在此基础上讨论了脊波导的的传输特性。所采用的并矢格林函数没有奇异项,可以化为标量格林函数来表示,而且能很方便地计算,并与经典方法计算的结果进行了比较。     

耦合腔慢波结构特性研究

本文从场论角度讨论了耦合腔慢波系统电特性与其几何参量间的定量关系。文中应用场的等效原理和格林函数技术,用矩量法求解了场匹配方程。系统的特性可用广义导纳矩阵的形式给出,每个广义导纳矩阵元均是频率和系统几何参量的函数。理论值与实验值有很好的一致性。     

用电磁场算子理论分析TEM室的传输特性

本文用电磁场算子理论通过多个虚拟边界的电场和磁场的耦合求解TEM室(TEM cell)的本征值,在此基础上讨论了TEM室的的传输特性,文中所采用的并矢格林函数没有奇异项,可以化为标量格林函数来计算,并与数值计算的结果进行了比较.     

用电磁场算子理论求波导复合系统的本征值

该文用并矢格林函数方法通过虚拟边界的电场和磁场的耦合求解波导复合结构的本征值,所采用的并矢格林函数没有奇异项,可以用标量格林函数来表示并进行计算,因此不仅可以计算横电与横磁模的基模和高次模式,还可以计算存在两个孪生模式的复合系统。该文同时还对经典场论中常用的一些定理,如面旋度定理进行了探讨。     

矩形介质谐抵腔的格林函数问题

本文讨论了求解平面分层媒质系统的并矢格林函数问题的一种新方法。这一方法的特点就是把并矢格莱函数问题转化为标量格林函数来解决。文中详述了介质加载的矩形腔的并矢格林函数的求解方法和结果。     

用矩量法求电磁场并矢格林函数的普遍形式

本文用矩量法导出了在规则边界下电磁场边值问题的一般公式,并由此导出并矢格林函数的普遍形式,应用这一方法,使规则边界下的电磁场边值问题的求解得到普遍解决。这一方法还可以用于其他更复杂的边界问题,例如用于耦合系统,来求解各种耦合系统的本征问题和传输问题。     

微分方程格林函数法的研究

针对线性时变系统格林函数理论与应用研究中尚存在的问题,本文比较系统地研究了微分方程的格林函数方法,给出了与偏微分方程格林公式相对应的公式;总结出特征解法与基本解法两种求解微分方程的格林函数法,并讨论了他们之间的等价关系;给出了求解弦自由振动方程两种确定初位移方法:即弦位移格林函数法与微分方程格林函数特征解法。这些研究对于补充完善线性时变系统理论、促进非平稳信号处理方法的发展具有重要理论意义和应用意义。      

关于用经典场论方法求场全解的问题(一)

本文先从一些具体的例予说明用经典场论的方法不可能从一个场的方程中得到电场的完全解,然后把这一结论推广到电磁场问题的普遍情况。从而得出,不论应用Tai的并矢格林函数法,还是Yaghjian的直接求解法都不可能求得关于电场的完全解的正确的表达式。     

DCIM求解多层媒质闭式格林函数

离散复镜像方法是求解平面分层媒质格林函数的有效方法之一。本文全面系统地论述了离散复镜像法求解多层媒质空域格林函数的详细过程，并着重讨论了第 m 层为有界区域的 DCIM 处理方法、表面波提取方法和多层媒质中的三维目标空域格林函数的有效插值方法等几个关键技术，从而提高了空域格林函数的求解效率。几个典型实例的计算结果表明了本文方法的有效性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.