一种IPv4/IPv6异步通信模块设计

分析了IPv4和IPv6编程接口区别,采用抽象工厂、策略和模板方法的设计模式设计了一个兼容IPv4和IPv6的异步通信模块,为基于双协议栈的软件开发提供了统一的底层通信编程接口,用该模块编写的IPv4通信软件系统可方便地实现向IPv6升级。     

Socket网络应用程序从IPv4向IPv6的转换

IPv4向IPv6过渡已经是不争的事实,IPv4下的一些网络应用程序可能需要转换到IPv6环境下运行.本文从SocketAPI编程入手,对这种转换总结了一套确实可行的方法.     

IPv6新型套接字的网络编程剖析

在分析RFC3493、RFC3542和RFC4038等参考文档的基础上，结合有连接的IPv6套接字编程实验，文中介绍了IPv6新型套接字、地址结构、地址转换与解析处理，阐述了用IPv6新型套接字实现网络通信的编程方法，并给出一个在普通局域网环境下实现的有连接通信程序示例和运行结果。试验表明文中所提出的IPv6网络编程方法是正确的和可行的．     

SIP:从IPv4到IPv6

会话初始协议 ( SIP)是下一代网络多媒体通信的信令协议。网络环境从 IPv4到 IPv6的过渡 ,必然会影响原本基于 IPv4制定的 SIP协议。SIP协议如何适应其变化 ?本文描述了采用 IPv6技术对 SIP协议带来的影响 ,并提出了一种在IPv4/IPv6混合网络模式下的 SIP结构     

告别IPv4，迎接IPv6

本文阐述了互联网规模与技术飞速发展的今天,IPv6普及的迫切性和必要性。以及相较于IPv4协议,IPv6协议的优势和特性,并分析了由IPv4向IPv6过渡时可能出现的问题。     

对IPv6和IPv4传输性能的对比研究

为了使更多的计算机网络工作者了解和接受IPv6,本文以两种不同的网络协议FTP协议和HTTP协议为例,以实验的方式研究了它们分别在IPv6和IPv4环境下对不同大小的文件进行网络传输的性能差异。通过对实验过程中采集的传输速率的计算和对比研究,发现IPv6在FTP协议和HTTP协议上文件传输速率比IPv4快,得出了整体而言IPv6的传输性能优于IPv4的结论。     

IPv6和IPv4网络互道的翻译网关技术

本文介绍了IPv4协议存在的问题和采用IPv6协议对中国通信业的影响,并重点说明了应用在IPv6和IPv4网络互通中的翻译网关技术。     

IPv4／IPv6代沟协议转换器的设计

目前业界普遍认为．支持IPv4到IPv6过渡模式主要有三种．即：网络单元和移动终端的IPv4／IPv6双栈、自动或结构配置隧道模式、网络中设置IPv4到IPv6协议转换器。其中在网络中设置代沟协议转换器是最简单便捷的IPv4/IPv6过渡方法。协议转换器为本地IPv4主机和本地IPv6主机间个中介单元，不需变更主机就可实现两间联络。网络地址转换器／协议转     

IPv6和IPv4网络互通的翻译网关技术

本文介绍了IPv4协议存在的问题和采用IPv6协议对中国通信业的影响，并重点说明了应用在IPv6和IPv4网络互通中的翻译网关技术。     

IPv4到IPv6过渡策略研究

本文从IPv4的局限性和IPv6的优势入手,提出了IP协议从IPv4过渡到IPv6将成为历史的必然,重点研究了IPv4到IPv6的过渡策略及策略的选择。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.