无人机对IMSE通信干扰仿真研究

基于高层体系结构（HLA）技术,设计了无人机对改进型移动用户设备（IMSE）通信干扰仿真系统,利用该仿真系统进行了仿真,得出了无人机采用不同飞行高度进行通信干扰时IMSE网络性能的指标参数,为研究无人机对IMSE实施通信干扰效果提供了一种有效的方法。     

基于HLA的通信对抗系统仿真研究

针对当前仿真技术的发展以及通信对抗训练的实际需求,基于HLA（高层体系结构）及VisualC＋＋开发工具,采用仿真系统构建的标准过程,提出了基于HLA通信对抗仿真系统的体系结构,并对各子系统的构成以及仿真的流程进行了研究。该仿真系统已用于教学、实验中,可以作为探讨电子战中通信对抗方式的有效手段。     

仿真系统和实装系统集成设计及应用

为了满足仿真系统和实装系统的集成需求,提出以基于高级体系结构（High level architec-ture,HLA）的运行支撑环境（Release to the internet,RTI）仿真代理系统作桥接,实现系统间互连互通和协同工作的系统集成方案,针对不同系统间信息交互机制不同及时间管理策略不同的问题,仿真代理系统设计实现了联邦代理、通信代理、数据转换、同步代理四大功能模块,给出了应用实例,并对系统扩展性和通用性进行了初步探讨。     

基于HLA信息战仿真系统开发研究

HLA高层体系结构是新一代分布交互仿真框架，以解决仿真应用中的互操作和可重用。在信息战仿真应用中有着广阔的应用前景。本文主要介绍一个信息战（通信对抗）系统基于HLA的开发应用，以应用的角度分析基于HLA的仿真系统开发过程和方法。     

基于Creator和Vega的通信对抗模拟训练三维视景仿真设计

随着计算机技术的发展,视景仿真已经成为一种趋势,本文介绍了适用于军事视景仿真的开发环境,主要介绍了Paradigm公司的MultiGen-Creator和MultiGen-Vega,以及高层体系结构（HLA）,并在此软件开发环境的基础上,构建了通信对抗模拟训练三维视景仿真的系统框架、系统运行结构以及通信对抗联邦体系结构,通过仿真结果验证,基于Creator和Vega的通信对抗模拟训练三维视景仿真系统取得了很好的效果。     

基于HLA的分布式虚拟靶试系统开发研究

高层体系结构(HLA)是目前分布式交互仿真领域最新的通用技术框架,基于HLA的仿真是系统仿真的发展方向。文章结合实例分布式虚拟靶试系统对HLA框架下的仿真系统设计进行深入研究,对本系统的开发环境、设计流程及系统开发实现过程中所需解决的主要关键技术时间同步作了讨论。本项研究对其它领域内基于HLA的联邦设计和开发具有参考价值.     

基于HLA的电子对抗战场仿真

为实现电子对抗战场仿真各部分的重用性和互操作性,在技术上逼近实际战争的情况,文中提出了用高层体系结构HLA对其进行仿真系统的开发和设计。结合对高层体系结构HLA的产生背景、特点、规范及部分常用术语的阐述,由浅入深地介绍了使用HLA进行电子对抗战场仿真的流程。     

基于XMSF 的预警探测仿真系统

针对高层体系结构(HLA)在不同厂商运行支撑环境(RTI)之间交互问题,以及下一代分布式仿真标准可扩展建模与仿真架构(XMSF),提出了一种基于XMSF的预警探测仿真系统。首先,介绍了XMSF 及其对HLA 的扩展;然后,分析了预警探测仿真系统的功能需求,并设计了该系统的功能框架图;最后,分析了仿真模型、基于数据分发服务(DDS)的运行框架、桥接代理、基于Web 服务的扩展等关键技术。     

基手HLA的分布式虚拟靶试系统开发研究

高层体系结构（HLA）是目前分布武交互仿真领域最新的通用技术框架，基于HLA的仿真是系统仿真的发展方向。文章结合实例分布武虚拟靶试系统对HLA框架下的仿真系统设计进行深入研究，对本系统的开发环境、设计流程及系统开发实现过程中所需解决的主要关键技术时间同步作了讨论。本项研究对其它领域内基于HLA的联邦设计和开发具有参考价值．     

基于HLA的单脉冲雷达导引头建模与仿真

根据单脉冲雷达导引头的特点以及高层体系结构(HLA)的原理,结合对导弹攻防仿真系统应用需要,设计并实现了基于HLA的单脉冲雷达导引头功能级仿真系统.分析该仿真系统的数学模型及其在HLA仿真框架中的具体实现,并建立仿真系统中单脉冲导引头成员和目标成员的运行逻辑和实体模型.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.