基于Saber的反激式开关电源的仿真研究

反激式开关电源因成本低、外围元器件少、可宽电压范围输入能耗小、支持多组输出而备受欢迎,但因输出电压纹波大而严重影响其工作性能。从反激式开关电源的工作原理出发,采用反激式开关电源输出端增加输出滤波电路的方法,解决反激式开关电源输出电压纹波大的问题。运用Saber仿真软件分别对普通反激式开关电源和增加 输出滤波电路的反激式开关电源进行建模和仿真。试验仿真对比表明,通过该方法可改善反激式开关电源的输出电压纹波,提高了反激式开关电源的工作性能。     

基于PWM集成控制器开关电源的设计与仿真

针对电源发展的集成化与小型化趋势,提出了一种基于TOPSwitch-GX单片开关电源的设计方法。详细分析该电源电路的外围控制电路、抗干扰电路、输出滤波电路和反馈控制电路的设计,实现了一个240 W的开关电源,这种单片开关电源电路具有结构和控制方法简单、体积小、噪音小、转换效率高等优点。     

高频开关电源中的输入EMI滤波电路

高频开关电源的工作过程与线性稳压电源完全不同,对滤波也有特殊的要求。其滤波电路一般由输入EMI滤波、工频滤波、输出滤波,以及防辐射干扰等四个基本电路组成。本文仅对输入EMI滤波电路进行初步探讨,其它几种以后将陆续介绍。 输入EMI滤波电路一般接在交流电网与高频开关电源的功率变换电路之间。其主要作用是     

适用于包络跟踪的开关电源调制电路设计

包络跟踪技术已经成为提高功率放大器效率的重要研究方向,其中高效率、高功率开关电源调制器是研究重点.对实际的开关电源调制电路以及相应的参数进行了分析,提出了适用于包络跟踪技术的开关电源调制电路.利用Spice软件对设计的电路进行了电路仿真,利用Cadence软件进行了印制电路板(PCB)电路的设计.经过实际测试,该开关电源调制器的输出电压达到48 V,电流约为0.9A,整个功能模块效率接近96％.该开关电源调制电路不仅具有高效率高功率输出脉冲信号,还可以根据设计需求改变NMOS管型号,并设计出不同开关频率、不同功率输出的开关电源调制电路.     

基于PSpice的开关电源瞬态特性及参数分析

为确定开关电源元件参数,对Buck型开关稳压电源电路具体工作原理和各部分功能进行详细分析,并建立实时仿真模型。根据所建立的数学模型,利用电路分析软件PSpice进行瞬态特性分析,得到开关电源输出电压和电感电流的瞬态响应特性;对滤波电容的等效串联电阻（ESR）进行参数分析,分析了电容退化对输出纹渡电压的影响,为开关电源的故障诊断与故障预测提供了新的思路。     

一种集成RCC式开关电源器件设计及应用

介绍一种新型自振反激型变换器RCC（Ring Choke Converter）开关电源器件的设计及应用,该电路只需极少量普通分立元件和1个集成电路就可以得到稳压输出。器件内部结构包括依次连接的整流滤波电路、转换器和输出电路,整流滤波电路与启动电路相连接。测试结果表明,该电路效率可达70％。简洁的方案和较高的效率适合于RCC电路。     

一种变压器串并联的开关电源的研制

为了提高大容量开关电源的总体性能,在开关电源的研制中应用到了变压器串并联技术。文中分析了开关电源的基本结构,介绍了变压器的几种串并联技术、变压器的设计、输出整流滤波等,并着重介绍了主电路的几种拓扑结构。     

AC-DC电源适配器设计

开关电源是重要的电力之源。本课题设计一款AC-DC电源适配器,使其为通信网络的控制和采集设备提供稳定的电源。要求此电源实现由220V交流电转化为12V/2A的直流电,其转换电流稳定,在高湿、高温下仍能正常实现适配功能。由于本课题是低功率开关电源的设计,所以使用的拓扑结构是单端反激式开关稳压电源电路。采用此拓扑结构的高频开关电源,具有成本低,电路简单,效率高,体积小等优点。本论文系统地介绍了开关电源的背景、现状、发展趋势,利用当今开关电源发展的新技术,设计并制作出安全、高效的精密型开关电源。本开关电源主要由输入整流滤波电路、高频变压器、输出整流滤波电路及控制反馈电路等部分组成。采用了TOP250智能控制集成芯片和PC817、TL431等专用芯片来设计电路,从而制作出具有自动稳压功能的单端反激式开关电源。     

一种集成RCC式开关电源器件设计及应用

介绍一种新型自振反激型变换器RCC(Ring Choke Converter)式开关电源器件的设计及应用,该电路只需极少量普通分立元件和1个集成电路就可以得到稳压输出.器件内部结构包括依次连接的整流滤波电路、转换器和输出电路,整流滤波电路与启动电路相连接.测试结果表明,该电路效率可达70%.简洁的方案和较高的效率适合于RCC电路.     

采用光耦的开关电源检修技巧探讨(上)

由于光耦在开关电源中的应用,使开关电源的取样电路由开关变压器的初级发展到开关变压器的次级,取样点由单独设立取样整流滤波电路改为直接从开关电源的输出 B电压取样,使取样电路不但提取开关电源输出电压的高低,还可跟随由负载电流变化引起的 B电压变化,使开关电源输出电压更     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.