基于DSP+CPLD的网络数据传输系统设计

介绍了基于DSP+CPLD和以太网卡的网络数据传输系统设计方案。设计了以DSP芯片TMS320VC5509A、CPLD芯片EPM3128A和网络接口控制器RTL8019AS为核心的网络接口电路;在DSP的结构中精简并实现了TCP/IP协议;通过编写C语言程序设计了系统与PC机进行网络数据传输的主程序,最后实现了数据的传输。实验证明:以DSP+CPLD和RTL8019AS网络芯片构成的网络数据传输系统,能与PC机进行数据传输,且工作稳定可靠。     

利用ADSP2106x串口实现ARINC429数据通信

本文给出了基于DSP芯片ADSP2106x的同步串口、ACEXlK系列CPLD以及支持ARINC429传输协议规范的接口芯片HS3282实现数据通信的设计实例。该设计方法利用CPLD减轻了DSP的通信负担，保证了有效处理时间。     

TMS320C32与PC机数据通信系统的开发与研究

本文基于TI公司的浮点运算DSP芯片TMS320C32，介绍了DSP芯片及其与PC机串行数据通信的特点，分别给出了DSP与PC机数据通信系统的上下位机开发方法，且阐述了采用Windows多线程技术开发的上位机软件的基本结构和以Am85c30通信芯片为核心的下位机通信适配器硬件设计，并以自行开发的基于DSP的电动机智能保护系统中TMS320C32与PC机的串行数据通信部分开发为例，详细介绍了系统的结构及几大功能的实现。     

基于TMS320C32的嵌入式RTOS视频网络检测系统

介绍了基于DSP芯片TMS320C32图像处理平台的网络测试系统 ,给出了使用专用视频输入处理芯片SAA7113和CPLD实现高速连续视频帧采集的设计思路。同时给出了该系统在嵌入式系统中基于PPP协议的Internet的连接方法。     

基于DSP和CPLD的高精度基因数据A/D采样、传输系统

本文介绍了一种基于DSP和CPLD技术的ISA总线高精度基因数据AD采样、传输系统。具体描述了采样、传输系统的系统构成及各部分功能。充分利用了TMS320VC5410的HPI口功能，实现了一种新颖的采集、传输系统与PC机通信的方式，给出了通信流程图。     

基于DSP的列车应变力测试系统设计

本文介绍了基于TMS320VC33　DSP芯片的应变力测试系统的设计,给出了结构原理框图,并围绕DSP设计了测试系统的中断、复位子系统、存储子系统和通信子系统。同时还对测试系统进行了信号完整性分析。     

基于DSP＋ARM的便携式电能质量分析仪设计

介绍了基于高性能DSP芯片ADSP21161和S3C2410ARM芯片实现的电能质量分析仪的设计方法。以DSP芯片为核心实现数据采集及处理,以S3C2410芯片为核心实现数据管理、人机界面及系统控制,同时采用WinCE嵌入式操作系统作为系统软件平台。该方案提高了系统的智能化及可靠性,降低了系统功耗并有利于系统扩展。测试结果表明该分析仪的各项指标均满足IEC电能质量测试标准。     

TMS320VC33在通信测试系统中的应用

给出了一种基于数字信号处理(Digital Signal Processing，DSP)芯片TMS320VC33的通信测试系统。介绍了该系统的硬件组成及软件设计，给出了相应的硬件接口图及软件设计流程图。     

基于LabWindows/CVI技术的引信自动测试系统设计

本文基于DSP技术、CPLD技术、回波信号模拟、VISA和ODBC等技术,完成了引信自动测试系统的硬件及软件设计.系统软件基于LabWindows/CVI平台进行开发,采用了一个通用自动测试系统软件框架,提高了测试系统的通用性、灵活性、可维护性和可扩充性.     

基于DSP的CPLD多方案现场可编程配置设计

结合继电保护测试装置的研制体会，介绍了基于DSP的CPLD多方案现场可编程配置方法，给出了硬件的配置连接、CPLD配置数据的获取与存储方法，同时给出了CPLD在DSP控制下的被动串行配置过程。本设计方法无需专用配置PROM，而是由DSP提供配置方案给CPLD来实现同一硬件对不同类型信号的检测与控制。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.